JP5830023B2 - 半導体素子 - Google Patents

半導体素子 Download PDF

Info

Publication number
JP5830023B2
JP5830023B2 JP2012537202A JP2012537202A JP5830023B2 JP 5830023 B2 JP5830023 B2 JP 5830023B2 JP 2012537202 A JP2012537202 A JP 2012537202A JP 2012537202 A JP2012537202 A JP 2012537202A JP 5830023 B2 JP5830023 B2 JP 5830023B2
Authority
JP
Japan
Prior art keywords
layer
feedthrough element
semiconductor device
contact
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012537202A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013514632A5 (enExample
JP2013514632A (ja
Inventor
テリル カイル
テリル カイル
Original Assignee
ヴィシェイ−シリコニックス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヴィシェイ−シリコニックス filed Critical ヴィシェイ−シリコニックス
Publication of JP2013514632A publication Critical patent/JP2013514632A/ja
Publication of JP2013514632A5 publication Critical patent/JP2013514632A5/ja
Application granted granted Critical
Publication of JP5830023B2 publication Critical patent/JP5830023B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0287—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0289—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2012537202A 2009-11-02 2010-11-02 半導体素子 Active JP5830023B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25736209P 2009-11-02 2009-11-02
US61/257,362 2009-11-02
US12/917,172 US8604525B2 (en) 2009-11-02 2010-11-01 Transistor structure with feed-through source-to-substrate contact
US12/917,172 2010-11-01
PCT/US2010/055181 WO2011054009A2 (en) 2009-11-02 2010-11-02 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2013514632A JP2013514632A (ja) 2013-04-25
JP2013514632A5 JP2013514632A5 (enExample) 2013-12-12
JP5830023B2 true JP5830023B2 (ja) 2015-12-09

Family

ID=43923080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012537202A Active JP5830023B2 (ja) 2009-11-02 2010-11-02 半導体素子

Country Status (6)

Country Link
US (3) US8604525B2 (enExample)
EP (1) EP2497114B1 (enExample)
JP (1) JP5830023B2 (enExample)
KR (1) KR101521423B1 (enExample)
CN (1) CN102656697B (enExample)
WO (1) WO2011054009A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US8604525B2 (en) * 2009-11-02 2013-12-10 Vishay-Siliconix Transistor structure with feed-through source-to-substrate contact
CN102931088A (zh) * 2011-08-10 2013-02-13 无锡华润上华半导体有限公司 Ldmos器件制造方法
US8680615B2 (en) 2011-12-13 2014-03-25 Freescale Semiconductor, Inc. Customized shield plate for a field effect transistor
US8823096B2 (en) * 2012-06-01 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods for forming the same
CN103855210A (zh) * 2012-12-03 2014-06-11 上海华虹宏力半导体制造有限公司 射频横向双扩散场效应晶体管及其制造方法
US9324838B2 (en) 2013-01-11 2016-04-26 Stmicroelectronics S.R.L. LDMOS power semiconductor device and manufacturing method of the same
US9070584B2 (en) * 2013-05-24 2015-06-30 Nanya Technology Corp. Buried digitline (BDL) access device and memory array
US8803236B1 (en) * 2013-05-30 2014-08-12 Vanguard International Semiconductor Corporation Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same
CN104518022A (zh) * 2013-09-27 2015-04-15 世界先进积体电路股份有限公司 横向双扩散金属氧化物半导体装置及其制造方法
CN104716177B (zh) * 2013-12-11 2017-10-24 上海华虹宏力半导体制造有限公司 一种改善漏电的射频ldmos器件的制造方法
US9450076B2 (en) 2014-01-21 2016-09-20 Stmicroelectronics S.R.L. Power LDMOS semiconductor device with reduced on-resistance and manufacturing method thereof
US9306013B2 (en) * 2014-05-23 2016-04-05 Texas Instruments Incorporated Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies
US9425304B2 (en) * 2014-08-21 2016-08-23 Vishay-Siliconix Transistor structure with improved unclamped inductive switching immunity
KR102389294B1 (ko) 2015-06-16 2022-04-20 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN110521001B (zh) * 2016-01-18 2022-05-24 德克萨斯仪器股份有限公司 具有金属填充的深源极触点的功率mosfet
CN107026199A (zh) * 2016-02-02 2017-08-08 立锜科技股份有限公司 具有双阱的金属氧化物半导体元件及其制造方法
US9543303B1 (en) * 2016-02-02 2017-01-10 Richtek Technology Corporation Complementary metal oxide semiconductor device with dual-well and manufacturing method thereof
CN110832617B (zh) * 2017-03-13 2024-04-16 德克萨斯仪器股份有限公司 具有下沉接触件的晶体管器件及其制造方法
CN108172621A (zh) * 2018-01-19 2018-06-15 矽力杰半导体技术(杭州)有限公司 Ldmos晶体管及其制造方法
US10790389B2 (en) * 2018-08-14 2020-09-29 Silanna Asia Pte Ltd Source contact formation of MOSFET with gate shield buffer for pitch reduction
WO2020059322A1 (ja) * 2018-09-21 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子回路
CN114242593A (zh) * 2021-12-13 2022-03-25 上海华虹宏力半导体制造有限公司 一种rfldmos器件及其制造方法
CN115528117B (zh) * 2022-11-16 2023-06-27 北京智芯微电子科技有限公司 横向双扩散场效应晶体管、制作方法、芯片及电路

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136378A (ja) 1983-12-26 1985-07-19 Hitachi Ltd 半導体装置およびその製造方法
US5283201A (en) 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5326711A (en) 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US5410170A (en) 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
JPH07122749A (ja) 1993-09-01 1995-05-12 Toshiba Corp 半導体装置及びその製造方法
JP3338178B2 (ja) 1994-05-30 2002-10-28 株式会社東芝 半導体装置およびその製造方法
JP3291958B2 (ja) 1995-02-21 2002-06-17 富士電機株式会社 バックソースｍｏｓｆｅｔ
US6049108A (en) 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
JP3850054B2 (ja) 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
US6133587A (en) 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
US5742076A (en) 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
WO1998004004A1 (en) 1996-07-19 1998-01-29 Siliconix Incorporated High density trench dmos transistor with trench bottom implant
US6057558A (en) 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
US6346438B1 (en) 1997-06-30 2002-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
US20010003367A1 (en) 1998-06-12 2001-06-14 Fwu-Iuan Hshieh Trenched dmos device with low gate charges
US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6413822B2 (en) 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
US6211018B1 (en) 1999-08-14 2001-04-03 Electronics And Telecommunications Research Institute Method for fabricating high density trench gate type power device
JP2001085685A (ja) 1999-09-13 2001-03-30 Shindengen Electric Mfg Co Ltd トランジスタ
EP1120835A2 (en) * 2000-01-26 2001-08-01 Siliconix incorporated MOSFET and method of manufacturing the same
US6246090B1 (en) 2000-03-14 2001-06-12 Intersil Corporation Power trench transistor device source region formation using silicon spacer
JP3910335B2 (ja) 2000-03-22 2007-04-25 セイコーインスツル株式会社 縦形ｍｏｓトランジスタ及びその製造方法
GB0010041D0 (en) 2000-04-26 2000-06-14 Koninkl Philips Electronics Nv Trench semiconductor device manufacture
EP1170803A3 (en) 2000-06-08 2002-10-09 Siliconix Incorporated Trench gate MOSFET and method of making the same
US6653691B2 (en) 2000-11-16 2003-11-25 Silicon Semiconductor Corporation Radio frequency (RF) power devices having faraday shield layers therein
US6552389B2 (en) * 2000-12-14 2003-04-22 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
JP2002270840A (ja) 2001-03-09 2002-09-20 Toshiba Corp パワーｍｏｓｆｅｔ
JP4852792B2 (ja) 2001-03-30 2012-01-11 株式会社デンソー 半導体装置の製造方法
JP4124981B2 (ja) * 2001-06-04 2008-07-23 株式会社ルネサステクノロジ 電力用半導体装置および電源回路
JP4421144B2 (ja) 2001-06-29 2010-02-24 株式会社東芝 半導体装置
US6569738B2 (en) 2001-07-03 2003-05-27 Siliconix, Inc. Process for manufacturing trench gated MOSFET having drain/drift region
US6882000B2 (en) 2001-08-10 2005-04-19 Siliconix Incorporated Trench MIS device with reduced gate-to-drain capacitance
US6894397B2 (en) 2001-10-03 2005-05-17 International Rectifier Corporation Plural semiconductor devices in monolithic flip chip
US6657255B2 (en) 2001-10-30 2003-12-02 General Semiconductor, Inc. Trench DMOS device with improved drain contact
DE10212144B4 (de) 2002-03-19 2005-10-06 Infineon Technologies Ag Transistoranordnung mit einer Struktur zur elektrischen Kontaktierung von Elektroden einer Trench-Transistorzelle
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US6831332B2 (en) * 2002-05-25 2004-12-14 Sirenza Microdevices, Inc. Microwave field effect transistor structure
US20080197408A1 (en) 2002-08-14 2008-08-21 Advanced Analogic Technologies, Inc. Isolated quasi-vertical DMOS transistor
DE10239310B4 (de) 2002-08-27 2005-11-03 Infineon Technologies Ag Verfahren zur Herstellung einer elektrisch leitenden Verbindung zwischen einer ersten und einer zweiten vergrabenen Halbleiterschicht
US7576388B1 (en) * 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6919248B2 (en) 2003-03-14 2005-07-19 International Rectifier Corporation Angled implant for shorter trench emitter
JP3964819B2 (ja) 2003-04-07 2007-08-22 株式会社東芝 絶縁ゲート型半導体装置
US6974750B2 (en) 2003-06-11 2005-12-13 International Rectifier Corporation Process for forming a trench power MOS device suitable for large diameter wafers
JP3703816B2 (ja) 2003-06-18 2005-10-05 株式会社東芝 半導体装置
US7138690B2 (en) * 2003-07-21 2006-11-21 Agere Systems Inc. Shielding structure for use in a metal-oxide-semiconductor device
US6987052B2 (en) 2003-10-30 2006-01-17 Agere Systems Inc. Method for making enhanced substrate contact for a semiconductor device
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US7119399B2 (en) * 2004-02-27 2006-10-10 Infineon Technologies Ag LDMOS transistor
US6906380B1 (en) 2004-05-13 2005-06-14 Vishay-Siliconix Drain side gate trench metal-oxide-semiconductor field effect transistor
US20050280085A1 (en) 2004-06-16 2005-12-22 Cree Microwave, Inc. LDMOS transistor having gate shield and trench source capacitor
US7061057B2 (en) 2004-06-16 2006-06-13 Cree Microwave, Llc Laterally diffused MOS transistor having N+ source contact to N-doped substrate
JP2006012967A (ja) 2004-06-23 2006-01-12 Toshiba Corp 半導体装置
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
JP2006086398A (ja) 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006278832A (ja) * 2005-03-30 2006-10-12 Renesas Technology Corp 半導体装置および電子装置
JP2006286953A (ja) 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置およびその製造方法
US7592650B2 (en) 2005-06-06 2009-09-22 M-Mos Semiconductor Sdn. Bhd. High density hybrid MOSFET device
US7282765B2 (en) 2005-07-13 2007-10-16 Ciclon Semiconductor Device Corp. Power LDMOS transistor
US7420247B2 (en) * 2005-08-12 2008-09-02 Cicion Semiconductor Device Corp. Power LDMOS transistor
US7235845B2 (en) 2005-08-12 2007-06-26 Ciclon Semiconductor Device Corp. Power LDMOS transistor
JP2007142272A (ja) 2005-11-21 2007-06-07 Sanyo Electric Co Ltd 半導体装置
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
JP2007287813A (ja) * 2006-04-14 2007-11-01 Renesas Technology Corp 半導体装置およびその製造方法
US7952145B2 (en) * 2007-02-20 2011-05-31 Texas Instruments Lehigh Valley Incorporated MOS transistor device in common source configuration
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
JP4748532B2 (ja) * 2007-11-16 2011-08-17 古河電気工業株式会社 ＧａＮ系半導体装置の製造方法
US8604525B2 (en) * 2009-11-02 2013-12-10 Vishay-Siliconix Transistor structure with feed-through source-to-substrate contact
US8803236B1 (en) 2013-05-30 2014-08-12 Vanguard International Semiconductor Corporation Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
WO2011054009A2 (en) 2011-05-05
US9064896B2 (en) 2015-06-23
EP2497114B1 (en) 2020-03-11
US20110266620A1 (en) 2011-11-03
US9443959B2 (en) 2016-09-13
JP2013514632A (ja) 2013-04-25
KR101521423B1 (ko) 2015-05-19
US20150243779A1 (en) 2015-08-27
US8604525B2 (en) 2013-12-10
US20140099765A1 (en) 2014-04-10
EP2497114A2 (en) 2012-09-12
KR20120091211A (ko) 2012-08-17
WO2011054009A3 (en) 2011-09-15
CN102656697A (zh) 2012-09-05
WO2011054009A8 (en) 2012-01-05
CN102656697B (zh) 2015-04-15
EP2497114A4 (en) 2014-01-22

Similar Documents

Publication Publication Date Title
JP5830023B2 (ja) 半導体素子
US12100741B2 (en) Lateral double-diffused transistor and manufacturing method thereof
US10134892B2 (en) High voltage device with low Rdson
CN102856182B (zh) 制造绝缘栅极半导体装置的方法及结构
CN101290936B (zh) 半导体器件及其制造方法
US8159024B2 (en) High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance
CN100570892C (zh) 半导体器件及其制造方法
US10672686B2 (en) LDMOS transistor and method
JP6926212B2 (ja) ディープソースコンタクトを備えたパワーｍｏｓｆｅｔ
US20170148889A1 (en) Metal oxide semiconductor field effect transistor power device with multi gates connection
CN107910266B (zh) 功率半导体器件及其制造方法
CN107910269B (zh) 功率半导体器件及其制造方法
CN107910268B (zh) 功率半导体器件及其制造方法
CN111524974B (zh) 半导体器件及其制造方法
CN107910271B (zh) 功率半导体器件及其制造方法
TWI902412B (zh) 半導體結構及其製造方法
US9105605B2 (en) Semiconductor device
US20240321997A1 (en) Semiconductor structure and fabrication method thereof
CN118693148A (zh) 功率金属氧化物半导体场效晶体管及其制造方法
CN117995839A (zh) 半导体装置及其形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131024

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131024

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140917

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140924

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150815

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150925

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151023

R150 Certificate of patent or registration of utility model

Ref document number: 5830023

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250