JP5815443B2 - 半導体装置の製造方法、基板処理方法および基板処理装置 - Google Patents

半導体装置の製造方法、基板処理方法および基板処理装置 Download PDF

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JP5815443B2
JP5815443B2 JP2012062763A JP2012062763A JP5815443B2 JP 5815443 B2 JP5815443 B2 JP 5815443B2 JP 2012062763 A JP2012062763 A JP 2012062763A JP 2012062763 A JP2012062763 A JP 2012062763A JP 5815443 B2 JP5815443 B2 JP 5815443B2
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gas
substrate
gas supply
processing chamber
supplying
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JP2013197307A (ja
JP2013197307A5 (enExample
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前田　喜世彦
喜世彦 前田
杰 王
杰 王
圭吾 西田
圭吾 西田
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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JP2012062763A 2012-03-19 2012-03-19 半導体装置の製造方法、基板処理方法および基板処理装置 Active JP5815443B2 (ja)

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JP2013197307A5 JP2013197307A5 (enExample) 2015-07-02
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016001760A (ja) * 2015-09-24 2016-01-07 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびガス供給系

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6306411B2 (ja) * 2014-04-17 2018-04-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6347544B2 (ja) * 2014-07-09 2018-06-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
SG11201703228XA (en) 2014-10-30 2017-05-30 Applied Materials Inc Method to grow thin epitaxial films at low temperature
CN105609406B (zh) 2014-11-19 2018-09-28 株式会社日立国际电气 半导体器件的制造方法、衬底处理装置、气体供给系统
JP6100854B2 (ja) * 2014-11-19 2017-03-22 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP6594768B2 (ja) 2015-12-25 2019-10-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
JP6560991B2 (ja) * 2016-01-29 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6561001B2 (ja) 2016-03-09 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、ガス供給系およびプログラム
JP6546872B2 (ja) 2016-04-07 2019-07-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6630237B2 (ja) 2016-06-06 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
JP6585551B2 (ja) 2016-06-15 2019-10-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6777624B2 (ja) 2017-12-28 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP7058575B2 (ja) 2018-09-12 2022-04-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
WO2021241448A1 (ja) * 2020-05-29 2021-12-02 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
EP4524287A1 (en) 2022-07-26 2025-03-19 Kokusai Electric Corporation Substrate processing method, method for producing semiconductor device, substrate processing apparatus, and program
JPWO2024062634A1 (enExample) 2022-09-23 2024-03-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016001760A (ja) * 2015-09-24 2016-01-07 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびガス供給系

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