JP2013197307A5 - - Google Patents
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- Publication number
- JP2013197307A5 JP2013197307A5 JP2012062763A JP2012062763A JP2013197307A5 JP 2013197307 A5 JP2013197307 A5 JP 2013197307A5 JP 2012062763 A JP2012062763 A JP 2012062763A JP 2012062763 A JP2012062763 A JP 2012062763A JP 2013197307 A5 JP2013197307 A5 JP 2013197307A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- gas supply
- silicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims description 391
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 98
- 229910052710 silicon Inorganic materials 0.000 claims description 96
- 239000010703 silicon Substances 0.000 claims description 95
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 92
- 239000000460 chlorine Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 55
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 37
- 229910052801 chlorine Inorganic materials 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 28
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 12
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 12
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 130
- 229910000077 silane Inorganic materials 0.000 description 81
- 235000012431 wafers Nutrition 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 18
- -1 epitaxial Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000003795 desorption Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012062763A JP5815443B2 (ja) | 2012-03-19 | 2012-03-19 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012062763A JP5815443B2 (ja) | 2012-03-19 | 2012-03-19 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015186342A Division JP6078604B2 (ja) | 2015-09-24 | 2015-09-24 | 半導体装置の製造方法、基板処理方法、基板処理装置およびガス供給系 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013197307A JP2013197307A (ja) | 2013-09-30 |
| JP2013197307A5 true JP2013197307A5 (enExample) | 2015-07-02 |
| JP5815443B2 JP5815443B2 (ja) | 2015-11-17 |
Family
ID=49395900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012062763A Active JP5815443B2 (ja) | 2012-03-19 | 2012-03-19 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5815443B2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6306411B2 (ja) * | 2014-04-17 | 2018-04-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6347544B2 (ja) * | 2014-07-09 | 2018-06-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| SG11201703228XA (en) | 2014-10-30 | 2017-05-30 | Applied Materials Inc | Method to grow thin epitaxial films at low temperature |
| CN105609406B (zh) | 2014-11-19 | 2018-09-28 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置、气体供给系统 |
| JP6100854B2 (ja) * | 2014-11-19 | 2017-03-22 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム |
| JP6078604B2 (ja) * | 2015-09-24 | 2017-02-08 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびガス供給系 |
| JP6594768B2 (ja) | 2015-12-25 | 2019-10-23 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
| JP6560991B2 (ja) * | 2016-01-29 | 2019-08-14 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6561001B2 (ja) | 2016-03-09 | 2019-08-14 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、ガス供給系およびプログラム |
| JP6546872B2 (ja) | 2016-04-07 | 2019-07-17 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| JP6630237B2 (ja) | 2016-06-06 | 2020-01-15 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置及びプログラム |
| JP6585551B2 (ja) | 2016-06-15 | 2019-10-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| JP6777624B2 (ja) | 2017-12-28 | 2020-10-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| JP7058575B2 (ja) | 2018-09-12 | 2022-04-22 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
| WO2021241448A1 (ja) * | 2020-05-29 | 2021-12-02 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
| EP4524287A1 (en) | 2022-07-26 | 2025-03-19 | Kokusai Electric Corporation | Substrate processing method, method for producing semiconductor device, substrate processing apparatus, and program |
| JPWO2024062634A1 (enExample) | 2022-09-23 | 2024-03-28 |
-
2012
- 2012-03-19 JP JP2012062763A patent/JP5815443B2/ja active Active
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