JP5804706B2 - キャップ層を有する基板用の析出後洗浄方法並びに組成 - Google Patents

キャップ層を有する基板用の析出後洗浄方法並びに組成 Download PDF

Info

Publication number
JP5804706B2
JP5804706B2 JP2010539925A JP2010539925A JP5804706B2 JP 5804706 B2 JP5804706 B2 JP 5804706B2 JP 2010539925 A JP2010539925 A JP 2010539925A JP 2010539925 A JP2010539925 A JP 2010539925A JP 5804706 B2 JP5804706 B2 JP 5804706B2
Authority
JP
Japan
Prior art keywords
cleaning solution
substrate
cap
cobalt
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010539925A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011508438A (ja
JP2011508438A5 (pt-PT
Inventor
コリクス・アートゥア
リー・シジャン
アルナジリ・ティルチラーパリ
ティエ・ウィリアム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2011508438A publication Critical patent/JP2011508438A/ja
Publication of JP2011508438A5 publication Critical patent/JP2011508438A5/ja
Application granted granted Critical
Publication of JP5804706B2 publication Critical patent/JP5804706B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0085Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76853Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
JP2010539925A 2007-12-21 2008-12-20 キャップ層を有する基板用の析出後洗浄方法並びに組成 Active JP5804706B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US1642707P 2007-12-21 2007-12-21
US61/016,427 2007-12-21
US12/334,462 US8404626B2 (en) 2007-12-21 2008-12-13 Post-deposition cleaning methods and formulations for substrates with cap layers
US12/334,462 2008-12-13
PCT/US2008/087878 WO2009086231A2 (en) 2007-12-21 2008-12-20 Post-deposition cleaning methods and formulations for substrates with cap layers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013260355A Division JP2014088569A (ja) 2007-12-21 2013-12-17 キャップ層を有する基板用の析出後洗浄方法並びに組成

Publications (3)

Publication Number Publication Date
JP2011508438A JP2011508438A (ja) 2011-03-10
JP2011508438A5 JP2011508438A5 (pt-PT) 2012-02-02
JP5804706B2 true JP5804706B2 (ja) 2015-11-04

Family

ID=40788967

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010539925A Active JP5804706B2 (ja) 2007-12-21 2008-12-20 キャップ層を有する基板用の析出後洗浄方法並びに組成
JP2013260355A Pending JP2014088569A (ja) 2007-12-21 2013-12-17 キャップ層を有する基板用の析出後洗浄方法並びに組成

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013260355A Pending JP2014088569A (ja) 2007-12-21 2013-12-17 キャップ層を有する基板用の析出後洗浄方法並びに組成

Country Status (6)

Country Link
US (2) US8404626B2 (pt-PT)
JP (2) JP5804706B2 (pt-PT)
KR (2) KR101633940B1 (pt-PT)
CN (1) CN101971296B (pt-PT)
TW (1) TWI528426B (pt-PT)
WO (1) WO2009086231A2 (pt-PT)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US8404626B2 (en) 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US9691622B2 (en) 2008-09-07 2017-06-27 Lam Research Corporation Pre-fill wafer cleaning formulation
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
KR20100110123A (ko) * 2009-04-02 2010-10-12 삼성전자주식회사 반도체 소자의 제조 방법
JP5879269B2 (ja) * 2009-12-23 2016-03-08 ラム リサーチ コーポレーションLam Research Corporation 堆積後ウエハ洗浄配合物
US8632628B2 (en) 2010-10-29 2014-01-21 Lam Research Corporation Solutions and methods for metal deposition
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
US8603913B1 (en) * 2012-12-20 2013-12-10 Lam Research Corporation Porous dielectrics K value restoration by thermal treatment and or solvent treatment
EP2971248B1 (en) * 2013-03-15 2021-10-13 CMC Materials, Inc. Aqueous cleaning composition for post copper chemical mechanical planarization
SG11201603122XA (en) 2013-10-21 2016-05-30 Fujifilm Electronic Materials Cleaning formulations for removing residues on surfaces
CN105873691B (zh) 2013-12-06 2018-04-20 富士胶片电子材料美国有限公司 用于去除表面上的残余物的清洗调配物
EP3169765B1 (en) 2014-07-18 2020-08-19 Cabot Microelectronics Corporation Cleaning composition following cmp and methods related thereto
JP2017529318A (ja) * 2014-07-18 2017-10-05 キャボット マイクロエレクトロニクス コーポレイション ジアルキルヒドロキシルアミンによる分解に対するトリス(2−ヒドロキシエチル)メチルアンモニウムヒドロキシドの安定化
JP6486652B2 (ja) * 2014-10-31 2019-03-20 東京応化工業株式会社 リソグラフィー用洗浄液、及び基板の洗浄方法
US10301580B2 (en) * 2014-12-30 2019-05-28 Versum Materials Us, Llc Stripping compositions having high WN/W etching selectivity
KR101854510B1 (ko) 2015-12-11 2018-05-03 삼성에스디아이 주식회사 금속 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
CN110249041A (zh) * 2017-02-10 2019-09-17 富士胶片电子材料美国有限公司 清洗制剂
GB2567456B (en) 2017-10-12 2021-08-11 Si Group Switzerland Chaa Gmbh Antidegradant blend
CN108377615B (zh) * 2018-03-15 2020-12-29 昆山长优电子材料有限公司 用于pcb图形转移前处理制程的铜面键合溶液
EP3774680A4 (en) 2018-03-28 2021-05-19 FUJIFILM Electronic Materials U.S.A, Inc. CLEANING COMPOSITIONS
GB201807302D0 (en) 2018-05-03 2018-06-20 Addivant Switzerland Gmbh Antidegradant blend
JP6858209B2 (ja) * 2019-02-20 2021-04-14 東京応化工業株式会社 リソグラフィー用洗浄液、及び基板の洗浄方法
CN110003996B (zh) * 2019-05-21 2021-03-23 广东剑鑫科技股份有限公司 一种浸泡液及其制备方法和使用方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909742A (en) 1993-03-26 1999-06-08 Betzdearborn Inc. Metal cleaning method
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
US20010052351A1 (en) 1998-09-29 2001-12-20 Brian J. Brown Method for cleaning semiconductor wafer having copper structure formed thereon
JP2002069495A (ja) * 2000-06-16 2002-03-08 Kao Corp 洗浄剤組成物
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP4942263B2 (ja) 2001-08-31 2012-05-30 ラムリサーチ株式会社 洗浄装置
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US6875691B2 (en) 2002-06-21 2005-04-05 Mattson Technology, Inc. Temperature control sequence of electroless plating baths
JP4261931B2 (ja) * 2002-07-05 2009-05-13 株式会社荏原製作所 無電解めっき装置および無電解めっき後の洗浄方法
US6846519B2 (en) 2002-08-08 2005-01-25 Blue29, Llc Method and apparatus for electroless deposition with temperature-controlled chuck
KR100536593B1 (ko) 2002-12-05 2005-12-14 삼성전자주식회사 선택적인 막 제거를 위한 세정 용액 및 그 세정 용액을사용하여 실리사이드 공정에서 막을 선택적으로 제거하는방법
TWI258504B (en) * 2003-01-07 2006-07-21 Tosoh Corp Washing solution and washing method using the same
JP4419528B2 (ja) * 2003-01-07 2010-02-24 東ソー株式会社 洗浄液及びそれを用いた洗浄方法
US6911067B2 (en) 2003-01-10 2005-06-28 Blue29, Llc Solution composition and method for electroless deposition of coatings free of alkali metals
US6902605B2 (en) 2003-03-06 2005-06-07 Blue29, Llc Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
US6794288B1 (en) 2003-05-05 2004-09-21 Blue29 Corporation Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation
KR100672933B1 (ko) 2003-06-04 2007-01-23 삼성전자주식회사 세정 용액 및 이를 이용한 반도체 소자의 세정 방법
US7883739B2 (en) 2003-06-16 2011-02-08 Lam Research Corporation Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
WO2005038084A2 (en) * 2003-10-17 2005-04-28 Applied Materials, Inc. Selective self-initiating electroless capping of copper with cobalt-containing alloys
TWI362415B (en) 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
US7205233B2 (en) * 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US20050205835A1 (en) 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
JP4390616B2 (ja) 2004-04-27 2009-12-24 Necエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
JP2007165514A (ja) * 2005-12-13 2007-06-28 Toshiba Corp 半導体装置の製造方法
US20070054482A1 (en) * 2004-08-10 2007-03-08 Takahito Nakajima Semiconductor device fabrication method
JP2006106616A (ja) * 2004-10-08 2006-04-20 Tokyo Ohka Kogyo Co Ltd ホトレジスト除去用処理液および基板の処理方法
JP2006178423A (ja) * 2004-11-25 2006-07-06 Kyowa Hakko Chemical Co Ltd 化学増幅ポジ型レジスト組成物
US7247579B2 (en) 2004-12-23 2007-07-24 Lam Research Corporation Cleaning methods for silicon electrode assembly surface contamination removal
US7273813B2 (en) 2005-02-08 2007-09-25 Applied Materials, Inc. Wafer cleaning solution for cobalt electroless application
JP2008543060A (ja) * 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
US8268735B2 (en) * 2006-02-01 2012-09-18 Tohoku University Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface
JP2007250915A (ja) * 2006-03-16 2007-09-27 Ebara Corp 基板処理方法および基板処理装置
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
TWI454574B (zh) * 2007-05-17 2014-10-01 Advanced Tech Materials 用於化學機械研磨後(post-CMP)清洗配方之新穎抗氧化劑
US8404626B2 (en) 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers

Also Published As

Publication number Publication date
KR20160030326A (ko) 2016-03-16
WO2009086231A2 (en) 2009-07-09
KR101633940B1 (ko) 2016-06-27
CN101971296A (zh) 2011-02-09
US8404626B2 (en) 2013-03-26
JP2014088569A (ja) 2014-05-15
KR20100108397A (ko) 2010-10-06
WO2009086231A3 (en) 2009-08-27
JP2011508438A (ja) 2011-03-10
KR101698731B1 (ko) 2017-01-20
TWI528426B (zh) 2016-04-01
TW200945424A (en) 2009-11-01
US8790465B2 (en) 2014-07-29
US20090162537A1 (en) 2009-06-25
CN101971296B (zh) 2012-05-30
US20130323410A1 (en) 2013-12-05

Similar Documents

Publication Publication Date Title
JP5804706B2 (ja) キャップ層を有する基板用の析出後洗浄方法並びに組成
CN106226991B (zh) TiN硬掩模和蚀刻残留物去除
TWI464259B (zh) 基板之清洗溶液組成
EP1679361B1 (en) Cleaning agent for substrate and cleaning method
KR101724559B1 (ko) 세정 조성물, 세정 방법, 및 반도체 장치의 제조 방법
EP2975108B1 (en) Copper corrosion inhibition system
US7851426B2 (en) Cleaning liquid and cleaning method using the same
EP2988321B1 (en) Cleaning liquid composition
JPWO2012073909A1 (ja) 銅配線用基板洗浄剤及び銅配線半導体基板の洗浄方法
WO2014123126A1 (ja) 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
TWI551726B (zh) 金屬膜表面的抗氧化方法以及抗氧化液
WO2022221497A1 (en) Cleaning composition
TWI841746B (zh) 過氧化氫分解抑制劑
KR101866254B1 (ko) 금속막 표면의 산화방지방법 및 산화방지액
TWI787225B (zh) 洗淨液組成物
JP5689665B2 (ja) 金属膜表面の酸化防止方法及び酸化防止液
KR20100082833A (ko) 구리 표면 처리를 위한 조성물 및 방법
KR20190079995A (ko) 세정액 조성물

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111212

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121204

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130301

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130308

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130603

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130820

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131217

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20131218

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140120

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20140320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150716

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150901

R150 Certificate of patent or registration of utility model

Ref document number: 5804706

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250