JP5804690B2 - 面発光レーザ - Google Patents

面発光レーザ Download PDF

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Publication number
JP5804690B2
JP5804690B2 JP2010249158A JP2010249158A JP5804690B2 JP 5804690 B2 JP5804690 B2 JP 5804690B2 JP 2010249158 A JP2010249158 A JP 2010249158A JP 2010249158 A JP2010249158 A JP 2010249158A JP 5804690 B2 JP5804690 B2 JP 5804690B2
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Japan
Prior art keywords
emitting laser
active layer
surface emitting
photonic crystal
dimensional photonic
Prior art date
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Expired - Fee Related
Application number
JP2010249158A
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English (en)
Japanese (ja)
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JP2012104524A5 (enExample
JP2012104524A (ja
Inventor
祥一 川島
祥一 川島
靖浩 長友
靖浩 長友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010249158A priority Critical patent/JP5804690B2/ja
Priority to US13/284,069 priority patent/US8379685B2/en
Publication of JP2012104524A publication Critical patent/JP2012104524A/ja
Publication of JP2012104524A5 publication Critical patent/JP2012104524A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2010249158A 2010-11-05 2010-11-05 面発光レーザ Expired - Fee Related JP5804690B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010249158A JP5804690B2 (ja) 2010-11-05 2010-11-05 面発光レーザ
US13/284,069 US8379685B2 (en) 2010-11-05 2011-10-28 Surface emitting laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010249158A JP5804690B2 (ja) 2010-11-05 2010-11-05 面発光レーザ

Publications (3)

Publication Number Publication Date
JP2012104524A JP2012104524A (ja) 2012-05-31
JP2012104524A5 JP2012104524A5 (enExample) 2013-12-19
JP5804690B2 true JP5804690B2 (ja) 2015-11-04

Family

ID=46019597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010249158A Expired - Fee Related JP5804690B2 (ja) 2010-11-05 2010-11-05 面発光レーザ

Country Status (2)

Country Link
US (1) US8379685B2 (enExample)
JP (1) JP5804690B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5627361B2 (ja) 2010-09-16 2014-11-19 キヤノン株式会社 ２次元フォトニック結晶面発光レーザ
US8885683B2 (en) 2011-12-21 2014-11-11 Canon Kabushiki Kaisha Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof
US9088133B2 (en) * 2012-02-28 2015-07-21 Kyoto University Two-dimensional photonic crystal surface emitting laser
JP2015523726A (ja) * 2012-06-18 2015-08-13 マサチューセッツ インスティテュート オブ テクノロジー 偶発的ディラック点によって有効化されるフォトニック結晶面発光レーザー
US11923655B2 (en) * 2018-08-27 2024-03-05 Hamamatsu Photonics K.K. Light emission device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983933B2 (ja) * 1999-05-21 2007-09-26 進 野田 半導体レーザ、および半導体レーザの製造方法
CN1286228C (zh) * 2002-02-08 2006-11-22 松下电器产业株式会社 半导体发光元件及其制造方法
JP4484134B2 (ja) * 2003-03-25 2010-06-16 独立行政法人科学技術振興機構 ２次元フォトニック結晶面発光レーザ
US20070030873A1 (en) * 2005-08-03 2007-02-08 Finisar Corporation Polarization control in VCSELs using photonics crystals
TWI279595B (en) * 2005-11-14 2007-04-21 Ind Tech Res Inst Electromagnetic polarizing structure and polarized electromagnetic device
US7535946B2 (en) 2006-11-16 2009-05-19 Canon Kabushiki Kaisha Structure using photonic crystal and surface emitting laser
US7499480B2 (en) 2006-11-16 2009-03-03 Canon Kabushiki Kaisha Photonic crystal structure and surface-emitting laser using the same
JP5111161B2 (ja) 2007-04-19 2012-12-26 キヤノン株式会社 フォトニック結晶層を有する構造体、それを用いた面発光レーザ
JP4338211B2 (ja) 2007-08-08 2009-10-07 キヤノン株式会社 フォトニック結晶を有する構造体、面発光レーザ
JP5070161B2 (ja) * 2007-08-31 2012-11-07 独立行政法人科学技術振興機構 フォトニック結晶レーザ
JP4968959B2 (ja) 2008-03-06 2012-07-04 キヤノン株式会社 フォトニック結晶および該フォトニック結晶を用いた面発光レーザ
JP5388666B2 (ja) 2008-04-21 2014-01-15 キヤノン株式会社 面発光レーザ
JP2010219307A (ja) * 2009-03-17 2010-09-30 Seiko Epson Corp 光源装置、プロジェクター
JP5183555B2 (ja) 2009-04-02 2013-04-17 キヤノン株式会社 面発光レーザアレイ
JP4975130B2 (ja) 2009-05-07 2012-07-11 キヤノン株式会社 フォトニック結晶面発光レーザ
JP5047258B2 (ja) 2009-12-09 2012-10-10 キヤノン株式会社 二次元フォトニック結晶面発光レーザ

Also Published As

Publication number Publication date
JP2012104524A (ja) 2012-05-31
US20120114006A1 (en) 2012-05-10
US8379685B2 (en) 2013-02-19

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