JP5803265B2 - 炭化珪素基板および炭化珪素インゴットの製造方法 - Google Patents

炭化珪素基板および炭化珪素インゴットの製造方法 Download PDF

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JP5803265B2
JP5803265B2 JP2011113341A JP2011113341A JP5803265B2 JP 5803265 B2 JP5803265 B2 JP 5803265B2 JP 2011113341 A JP2011113341 A JP 2011113341A JP 2011113341 A JP2011113341 A JP 2011113341A JP 5803265 B2 JP5803265 B2 JP 5803265B2
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silicon carbide
region
ingot
substrate
nitrogen
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Japanese (ja)
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JP2012240892A (ja
JP2012240892A5 (https=
Inventor
佐々木　信
信 佐々木
太郎 西口
太郎 西口
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2011113341A priority Critical patent/JP5803265B2/ja
Priority to CN2012800193499A priority patent/CN103476975A/zh
Priority to PCT/JP2012/058527 priority patent/WO2012160872A1/ja
Priority to DE112012002192.4T priority patent/DE112012002192T5/de
Priority to US13/472,922 priority patent/US20120294790A1/en
Publication of JP2012240892A publication Critical patent/JP2012240892A/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2011113341A 2011-05-20 2011-05-20 炭化珪素基板および炭化珪素インゴットの製造方法 Expired - Fee Related JP5803265B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011113341A JP5803265B2 (ja) 2011-05-20 2011-05-20 炭化珪素基板および炭化珪素インゴットの製造方法
CN2012800193499A CN103476975A (zh) 2011-05-20 2012-03-30 碳化硅衬底、碳化硅锭以及制造碳化硅衬底和碳化硅锭的方法
PCT/JP2012/058527 WO2012160872A1 (ja) 2011-05-20 2012-03-30 炭化珪素基板、炭化珪素インゴットおよびそれらの製造方法
DE112012002192.4T DE112012002192T5 (de) 2011-05-20 2012-03-30 Siliziumcarbidsubstrat, Ingot aus Siliziumcarbid, und Verfahren zur Herstellung eines Siliziumcarbidsubstrats und eines Ingots aus Siliziumcarbid
US13/472,922 US20120294790A1 (en) 2011-05-20 2012-05-16 Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011113341A JP5803265B2 (ja) 2011-05-20 2011-05-20 炭化珪素基板および炭化珪素インゴットの製造方法

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JP2015172850A Division JP6036947B2 (ja) 2015-09-02 2015-09-02 炭化珪素基板および炭化珪素インゴットの製造方法

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JP2012240892A JP2012240892A (ja) 2012-12-10
JP2012240892A5 JP2012240892A5 (https=) 2014-02-27
JP5803265B2 true JP5803265B2 (ja) 2015-11-04

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JP2011113341A Expired - Fee Related JP5803265B2 (ja) 2011-05-20 2011-05-20 炭化珪素基板および炭化珪素インゴットの製造方法

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US (1) US20120294790A1 (https=)
JP (1) JP5803265B2 (https=)
CN (1) CN103476975A (https=)
DE (1) DE112012002192T5 (https=)
WO (1) WO2012160872A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5857986B2 (ja) 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
JP6233058B2 (ja) * 2013-09-25 2017-11-22 住友電気工業株式会社 炭化珪素半導体基板の製造方法
JP2015098420A (ja) * 2013-11-20 2015-05-28 住友電気工業株式会社 炭化珪素インゴットおよび炭化珪素基板の製造方法
US10711369B2 (en) 2014-12-05 2020-07-14 Showa Denko K.K. Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
KR102106722B1 (ko) 2015-07-29 2020-05-04 쇼와 덴코 가부시키가이샤 에피택셜 탄화규소 단결정 웨이퍼의 제조 방법
JP6729605B2 (ja) * 2016-02-09 2020-07-22 住友電気工業株式会社 炭化珪素単結晶基板
JP7406914B2 (ja) * 2018-07-25 2023-12-28 株式会社デンソー ＳｉＣウェハ及びＳｉＣウェハの製造方法
CN112513348B (zh) 2018-07-25 2023-11-14 株式会社电装 SiC晶片和SiC晶片的制造方法
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
KR102234002B1 (ko) * 2019-10-22 2021-03-29 에스케이씨 주식회사 탄화규소 잉곳, 이의 제조방법 및 탄화규소 웨이퍼의 제조방법
CN114264652B (zh) * 2021-12-09 2024-11-29 浙江大学杭州国际科创中心 碳化硅中位错产生及演变的逆向分析方法
JP2024053501A (ja) * 2022-10-03 2024-04-15 一般財団法人電力中央研究所 炭化珪素単結晶の製造方法及び炭化珪素単結晶インゴット
WO2024162069A1 (ja) * 2023-02-02 2024-08-08 住友電気工業株式会社 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP7852690B2 (ja) * 2023-12-28 2026-04-28 株式会社レゾナック ＳｉＣインゴット及びＳｉＣ基板の製造方法
JP7852691B2 (ja) * 2023-12-28 2026-04-28 株式会社レゾナック ＳｉＣインゴット、ＳｉＣ基板の製造方法およびＳｉＣインゴットの評価方法
KR20250103414A (ko) * 2023-12-28 2025-07-07 가부시끼가이샤 레조낙 SiC 잉곳 및 SiC 기판의 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10247017B4 (de) * 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
JP4926556B2 (ja) * 2006-06-20 2012-05-09 新日本製鐵株式会社 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶基板
JP2008071896A (ja) * 2006-09-13 2008-03-27 Nippon Steel Corp 金属−絶縁膜−炭化珪素半導体構造

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CN103476975A (zh) 2013-12-25
US20120294790A1 (en) 2012-11-22
JP2012240892A (ja) 2012-12-10
DE112012002192T5 (de) 2014-03-13
WO2012160872A1 (ja) 2012-11-29

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