CN103476975A - 碳化硅衬底、碳化硅锭以及制造碳化硅衬底和碳化硅锭的方法 - Google Patents

碳化硅衬底、碳化硅锭以及制造碳化硅衬底和碳化硅锭的方法 Download PDF

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Publication number
CN103476975A
CN103476975A CN2012800193499A CN201280019349A CN103476975A CN 103476975 A CN103476975 A CN 103476975A CN 2012800193499 A CN2012800193499 A CN 2012800193499A CN 201280019349 A CN201280019349 A CN 201280019349A CN 103476975 A CN103476975 A CN 103476975A
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China
Prior art keywords
silicon carbide
region
ingot
substrate
concentration
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CN2012800193499A
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English (en)
Chinese (zh)
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佐佐木信
西口太郎
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication of CN103476975A publication Critical patent/CN103476975A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2012800193499A 2011-05-20 2012-03-30 碳化硅衬底、碳化硅锭以及制造碳化硅衬底和碳化硅锭的方法 Pending CN103476975A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-113341 2011-05-20
JP2011113341A JP5803265B2 (ja) 2011-05-20 2011-05-20 炭化珪素基板および炭化珪素インゴットの製造方法
PCT/JP2012/058527 WO2012160872A1 (ja) 2011-05-20 2012-03-30 炭化珪素基板、炭化珪素インゴットおよびそれらの製造方法

Publications (1)

Publication Number Publication Date
CN103476975A true CN103476975A (zh) 2013-12-25

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CN2012800193499A Pending CN103476975A (zh) 2011-05-20 2012-03-30 碳化硅衬底、碳化硅锭以及制造碳化硅衬底和碳化硅锭的方法

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US (1) US20120294790A1 (https=)
JP (1) JP5803265B2 (https=)
CN (1) CN103476975A (https=)
DE (1) DE112012002192T5 (https=)
WO (1) WO2012160872A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105745364A (zh) * 2013-11-20 2016-07-06 住友电气工业株式会社 碳化硅锭和碳化硅衬底的制造方法
CN108495957A (zh) * 2016-02-09 2018-09-04 住友电气工业株式会社 碳化硅单晶衬底
CN112695384A (zh) * 2019-10-22 2021-04-23 Skc株式会社 碳化硅晶锭及其制备方法以及碳化硅晶片的制备方法
CN114264652A (zh) * 2021-12-09 2022-04-01 浙江大学杭州国际科创中心 碳化硅中位错产生及演变的逆向分析方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5857986B2 (ja) 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
JP6233058B2 (ja) * 2013-09-25 2017-11-22 住友電気工業株式会社 炭化珪素半導体基板の製造方法
US10711369B2 (en) 2014-12-05 2020-07-14 Showa Denko K.K. Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
KR102106722B1 (ko) 2015-07-29 2020-05-04 쇼와 덴코 가부시키가이샤 에피택셜 탄화규소 단결정 웨이퍼의 제조 방법
JP7406914B2 (ja) * 2018-07-25 2023-12-28 株式会社デンソー ＳｉＣウェハ及びＳｉＣウェハの製造方法
CN112513348B (zh) 2018-07-25 2023-11-14 株式会社电装 SiC晶片和SiC晶片的制造方法
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2024053501A (ja) * 2022-10-03 2024-04-15 一般財団法人電力中央研究所 炭化珪素単結晶の製造方法及び炭化珪素単結晶インゴット
WO2024162069A1 (ja) * 2023-02-02 2024-08-08 住友電気工業株式会社 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP7852690B2 (ja) * 2023-12-28 2026-04-28 株式会社レゾナック ＳｉＣインゴット及びＳｉＣ基板の製造方法
JP7852691B2 (ja) * 2023-12-28 2026-04-28 株式会社レゾナック ＳｉＣインゴット、ＳｉＣ基板の製造方法およびＳｉＣインゴットの評価方法
KR20250103414A (ko) * 2023-12-28 2025-07-07 가부시끼가이샤 레조낙 SiC 잉곳 및 SiC 기판의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008001532A (ja) * 2006-06-20 2008-01-10 Nippon Steel Corp 炭化珪素単結晶インゴット及びその製造方法
JP2008071896A (ja) * 2006-09-13 2008-03-27 Nippon Steel Corp 金属−絶縁膜−炭化珪素半導体構造

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10247017B4 (de) * 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008001532A (ja) * 2006-06-20 2008-01-10 Nippon Steel Corp 炭化珪素単結晶インゴット及びその製造方法
JP2008071896A (ja) * 2006-09-13 2008-03-27 Nippon Steel Corp 金属−絶縁膜−炭化珪素半導体構造

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105745364A (zh) * 2013-11-20 2016-07-06 住友电气工业株式会社 碳化硅锭和碳化硅衬底的制造方法
CN108495957A (zh) * 2016-02-09 2018-09-04 住友电气工业株式会社 碳化硅单晶衬底
CN108495957B (zh) * 2016-02-09 2022-11-25 住友电气工业株式会社 碳化硅单晶衬底
US11535953B2 (en) 2016-02-09 2022-12-27 Sumitomo Electric Industries, Ltd. Silicon carbide single crystal substrate
US11781246B2 (en) 2016-02-09 2023-10-10 Sumitomo Electric Industries, Ltd. Silicon carbide single crystal substrate
CN112695384A (zh) * 2019-10-22 2021-04-23 Skc株式会社 碳化硅晶锭及其制备方法以及碳化硅晶片的制备方法
TWI750661B (zh) * 2019-10-22 2021-12-21 南韓商賽尼克股份有限公司 碳化矽晶錠、其製造方法以及碳化矽晶片的製備方法
US11466383B2 (en) 2019-10-22 2022-10-11 Senic Inc. Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer
CN114264652A (zh) * 2021-12-09 2022-04-01 浙江大学杭州国际科创中心 碳化硅中位错产生及演变的逆向分析方法

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Publication number Publication date
JP5803265B2 (ja) 2015-11-04
US20120294790A1 (en) 2012-11-22
JP2012240892A (ja) 2012-12-10
DE112012002192T5 (de) 2014-03-13
WO2012160872A1 (ja) 2012-11-29

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Application publication date: 20131225