DE112012002192T5 - Siliziumcarbidsubstrat, Ingot aus Siliziumcarbid, und Verfahren zur Herstellung eines Siliziumcarbidsubstrats und eines Ingots aus Siliziumcarbid - Google Patents
Siliziumcarbidsubstrat, Ingot aus Siliziumcarbid, und Verfahren zur Herstellung eines Siliziumcarbidsubstrats und eines Ingots aus Siliziumcarbid Download PDFInfo
- Publication number
- DE112012002192T5 DE112012002192T5 DE112012002192.4T DE112012002192T DE112012002192T5 DE 112012002192 T5 DE112012002192 T5 DE 112012002192T5 DE 112012002192 T DE112012002192 T DE 112012002192T DE 112012002192 T5 DE112012002192 T5 DE 112012002192T5
- Authority
- DE
- Germany
- Prior art keywords
- silicon carbide
- ingot
- nitrogen concentration
- substrate
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 457
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 456
- 239000000758 substrate Substances 0.000 title claims abstract description 398
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 239000013078 crystal Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 20
- 230000001154 acute effect Effects 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 677
- 229910052757 nitrogen Inorganic materials 0.000 claims description 343
- 238000002834 transmittance Methods 0.000 claims description 49
- 238000005520 cutting process Methods 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 230000012010 growth Effects 0.000 description 42
- 230000000052 comparative effect Effects 0.000 description 17
- 238000009826 distribution Methods 0.000 description 16
- 238000005259 measurement Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- 238000000227 grinding Methods 0.000 description 11
- 230000035699 permeability Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000012805 post-processing Methods 0.000 description 9
- 230000003698 anagen phase Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-113341 | 2011-05-20 | ||
| JP2011113341A JP5803265B2 (ja) | 2011-05-20 | 2011-05-20 | 炭化珪素基板および炭化珪素インゴットの製造方法 |
| PCT/JP2012/058527 WO2012160872A1 (ja) | 2011-05-20 | 2012-03-30 | 炭化珪素基板、炭化珪素インゴットおよびそれらの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112012002192T5 true DE112012002192T5 (de) | 2014-03-13 |
Family
ID=47175050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112012002192.4T Withdrawn DE112012002192T5 (de) | 2011-05-20 | 2012-03-30 | Siliziumcarbidsubstrat, Ingot aus Siliziumcarbid, und Verfahren zur Herstellung eines Siliziumcarbidsubstrats und eines Ingots aus Siliziumcarbid |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120294790A1 (https=) |
| JP (1) | JP5803265B2 (https=) |
| CN (1) | CN103476975A (https=) |
| DE (1) | DE112012002192T5 (https=) |
| WO (1) | WO2012160872A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5857986B2 (ja) | 2013-02-20 | 2016-02-10 | 株式会社デンソー | 炭化珪素単結晶および炭化珪素単結晶の製造方法 |
| JP6233058B2 (ja) * | 2013-09-25 | 2017-11-22 | 住友電気工業株式会社 | 炭化珪素半導体基板の製造方法 |
| JP2015098420A (ja) * | 2013-11-20 | 2015-05-28 | 住友電気工業株式会社 | 炭化珪素インゴットおよび炭化珪素基板の製造方法 |
| US10711369B2 (en) | 2014-12-05 | 2020-07-14 | Showa Denko K.K. | Method for producing silicon carbide single crystal and silicon carbide single crystal substrate |
| KR102106722B1 (ko) | 2015-07-29 | 2020-05-04 | 쇼와 덴코 가부시키가이샤 | 에피택셜 탄화규소 단결정 웨이퍼의 제조 방법 |
| JP6729605B2 (ja) * | 2016-02-09 | 2020-07-22 | 住友電気工業株式会社 | 炭化珪素単結晶基板 |
| JP7406914B2 (ja) * | 2018-07-25 | 2023-12-28 | 株式会社デンソー | ＳｉＣウェハ及びＳｉＣウェハの製造方法 |
| CN112513348B (zh) | 2018-07-25 | 2023-11-14 | 株式会社电装 | SiC晶片和SiC晶片的制造方法 |
| JP7393900B2 (ja) * | 2019-09-24 | 2023-12-07 | 一般財団法人電力中央研究所 | 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法 |
| KR102234002B1 (ko) * | 2019-10-22 | 2021-03-29 | 에스케이씨 주식회사 | 탄화규소 잉곳, 이의 제조방법 및 탄화규소 웨이퍼의 제조방법 |
| CN114264652B (zh) * | 2021-12-09 | 2024-11-29 | 浙江大学杭州国际科创中心 | 碳化硅中位错产生及演变的逆向分析方法 |
| JP2024053501A (ja) * | 2022-10-03 | 2024-04-15 | 一般財団法人電力中央研究所 | 炭化珪素単結晶の製造方法及び炭化珪素単結晶インゴット |
| WO2024162069A1 (ja) * | 2023-02-02 | 2024-08-08 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法 |
| JP7852690B2 (ja) * | 2023-12-28 | 2026-04-28 | 株式会社レゾナック | ＳｉＣインゴット及びＳｉＣ基板の製造方法 |
| JP7852691B2 (ja) * | 2023-12-28 | 2026-04-28 | 株式会社レゾナック | ＳｉＣインゴット、ＳｉＣ基板の製造方法およびＳｉＣインゴットの評価方法 |
| KR20250103414A (ko) * | 2023-12-28 | 2025-07-07 | 가부시끼가이샤 레조낙 | SiC 잉곳 및 SiC 기판의 제조 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10247017B4 (de) * | 2001-10-12 | 2009-06-10 | Denso Corp., Kariya-shi | SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist |
| JP3764462B2 (ja) * | 2003-04-10 | 2006-04-05 | 株式会社豊田中央研究所 | 炭化ケイ素単結晶の製造方法 |
| EP1619276B1 (en) * | 2004-07-19 | 2017-01-11 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
| JP4926556B2 (ja) * | 2006-06-20 | 2012-05-09 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴットの製造方法及び炭化珪素単結晶基板 |
| JP2008071896A (ja) * | 2006-09-13 | 2008-03-27 | Nippon Steel Corp | 金属−絶縁膜−炭化珪素半導体構造 |
-
2011
- 2011-05-20 JP JP2011113341A patent/JP5803265B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 CN CN2012800193499A patent/CN103476975A/zh active Pending
- 2012-03-30 WO PCT/JP2012/058527 patent/WO2012160872A1/ja not_active Ceased
- 2012-03-30 DE DE112012002192.4T patent/DE112012002192T5/de not_active Withdrawn
- 2012-05-16 US US13/472,922 patent/US20120294790A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN103476975A (zh) | 2013-12-25 |
| JP5803265B2 (ja) | 2015-11-04 |
| US20120294790A1 (en) | 2012-11-22 |
| JP2012240892A (ja) | 2012-12-10 |
| WO2012160872A1 (ja) | 2012-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE112012002192T5 (de) | Siliziumcarbidsubstrat, Ingot aus Siliziumcarbid, und Verfahren zur Herstellung eines Siliziumcarbidsubstrats und eines Ingots aus Siliziumcarbid | |
| DE102017217540B4 (de) | Herstellungsverfahren für einkristallines Silicium und einkristallines Silicium | |
| DE112013002107B4 (de) | SiC-Einkristall-Herstellungsverfahren | |
| DE112013001054B4 (de) | Verfahren zum Herstellen eines Silizium-Einkristall-Wafers | |
| DE112017002662T5 (de) | Verfahren und Vorrichtung zur Herstellung von Silicium-Einkristall | |
| DE112017004799B4 (de) | n-Typ-SiC-Einkristallsubstrat, Verfahren zur Herstellung desselben und SiC-Epitaxiewafer | |
| DE112017007978B4 (de) | Suszeptor, epitaxiewachstumsvorrichtung, verfahren zum produzieren eines siliziumepitaxialwafers und siliziumepitaxialwafer | |
| DE112014003132B4 (de) | Siliziumkarbid-Einkristallsubstrat | |
| DE102010029741A1 (de) | Verfahren zum Herstellen von Silizium-Wafern und Silizium-Solarzelle | |
| DE112018001046B4 (de) | Verfahren zur Herstellung eines Siliziumeinkristall-Ingots und Siliziumeinkristall-Wachstumsvorrichtung | |
| DE112018006080B4 (de) | Silicium-Einkristall, Verfahren zur Herstellung desselben, sowie Siliciumwafer | |
| DE112018002163B4 (de) | Verfahren zur Herstellung eines Silicium-Einkristalls, Verfahren zur Herstellung eines epitaktischen Silicium-Wafers, Silicium-Einkristall, und epitaktischer Silicium-Wafer | |
| DE102015226399A1 (de) | Siliciumscheibe mit homogener radialer Sauerstoffvariation | |
| DE102015212323A1 (de) | Schmelztiegel und Verfahren zur Herstellung eines Einkristalls | |
| WO2017097675A1 (de) | Halbleiterscheibe aus einkristallinem silizium und verfahren zu deren herstellung | |
| DE112016004729T5 (de) | Siliziumkarbidsubstrat | |
| DE112018001896B4 (de) | Wärmeabschirmbauteil, einkristall-ziehvorrichtung und verwendung derselben zur herstellung eines silicium-einkristall-ingots | |
| DE112015003168T5 (de) | Verfahren zur Herstellung eines Siliziumkarbid-Einkristalls und Siliziumkarbid-Substrat | |
| DE69724612T2 (de) | Vorrichtung und verfahren zur herstellung von kristallen durch die czochralskimethode und durch diese methode hergestellte kristallen | |
| US9605358B2 (en) | Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot | |
| DE112023006052T5 (de) | Einkristall-ziehvorrichtung und verfahren zur herstellung von einkristallinem silizium | |
| DE112023006223T5 (de) | Indiumphosphid-Einkristallsubstrat und Herstellungsverfahren für einen Indiumphosphid-Einkristall | |
| EP4137613A1 (de) | Verfahren zur herstellung einer epitaktisch beschichteten hableiterscheibe aus einkristallinem silizium | |
| DE112012005584T5 (de) | Verfahren zum Züchten eines Silizium-Einkristalles | |
| DE102013211769A1 (de) | Kristallisationsanlage und Kristallisationsverfahren zur Kristallisation aus elektrisch leitenden Schmelzen sowie über das Verfahren erhältliche Ingots |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |