JP5800452B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP5800452B2
JP5800452B2 JP2009103189A JP2009103189A JP5800452B2 JP 5800452 B2 JP5800452 B2 JP 5800452B2 JP 2009103189 A JP2009103189 A JP 2009103189A JP 2009103189 A JP2009103189 A JP 2009103189A JP 5800452 B2 JP5800452 B2 JP 5800452B2
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JP
Japan
Prior art keywords
electrode
light
semiconductor layer
substrate
light emitting
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Expired - Lifetime
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JP2009103189A
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Japanese (ja)
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JP2009200514A (ja
JP2009200514A5 (enrdf_load_stackoverflow
Inventor
仁木　勇
勇 仁木
山田　元量
元量 山田
佐野　雅彦
雅彦 佐野
修司 塩路
修司 塩路
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Nichia Corp
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Nichia Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41143613&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP5800452(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2009103189A priority Critical patent/JP5800452B2/ja
Publication of JP2009200514A publication Critical patent/JP2009200514A/ja
Publication of JP2009200514A5 publication Critical patent/JP2009200514A5/ja
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  • Electrodes Of Semiconductors (AREA)
JP2009103189A 2001-07-24 2009-04-21 半導体発光素子 Expired - Lifetime JP5800452B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009103189A JP5800452B2 (ja) 2001-07-24 2009-04-21 半導体発光素子

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001223114 2001-07-24
JP2001223114 2001-07-24
JP2002041737 2002-02-19
JP2002041737 2002-02-19
JP2009103189A JP5800452B2 (ja) 2001-07-24 2009-04-21 半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2006252509A Division JP4356723B2 (ja) 2001-07-24 2006-09-19 窒化物半導体発光素子の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012002769A Division JP5423819B2 (ja) 2001-07-24 2012-01-11 半導体発光素子
JP2013076084A Division JP5590178B2 (ja) 2001-07-24 2013-04-01 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2009200514A JP2009200514A (ja) 2009-09-03
JP2009200514A5 JP2009200514A5 (enrdf_load_stackoverflow) 2011-05-19
JP5800452B2 true JP5800452B2 (ja) 2015-10-28

Family

ID=41143613

Family Applications (9)

Application Number Title Priority Date Filing Date
JP2009103189A Expired - Lifetime JP5800452B2 (ja) 2001-07-24 2009-04-21 半導体発光素子
JP2012002769A Expired - Lifetime JP5423819B2 (ja) 2001-07-24 2012-01-11 半導体発光素子
JP2013076084A Expired - Lifetime JP5590178B2 (ja) 2001-07-24 2013-04-01 半導体発光素子
JP2014053853A Expired - Lifetime JP5835382B2 (ja) 2001-07-24 2014-03-17 半導体発光素子
JP2015101211A Expired - Fee Related JP5973620B2 (ja) 2001-07-24 2015-05-18 半導体発光素子
JP2016102501A Expired - Fee Related JP6096357B2 (ja) 2001-07-24 2016-05-23 半導体発光素子
JP2017008907A Expired - Lifetime JP6320582B2 (ja) 2001-07-24 2017-01-20 半導体発光素子
JP2018026341A Expired - Lifetime JP6627897B2 (ja) 2001-07-24 2018-02-16 半導体発光素子
JP2019141180A Pending JP2019216255A (ja) 2001-07-24 2019-07-31 半導体発光素子

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2012002769A Expired - Lifetime JP5423819B2 (ja) 2001-07-24 2012-01-11 半導体発光素子
JP2013076084A Expired - Lifetime JP5590178B2 (ja) 2001-07-24 2013-04-01 半導体発光素子
JP2014053853A Expired - Lifetime JP5835382B2 (ja) 2001-07-24 2014-03-17 半導体発光素子
JP2015101211A Expired - Fee Related JP5973620B2 (ja) 2001-07-24 2015-05-18 半導体発光素子
JP2016102501A Expired - Fee Related JP6096357B2 (ja) 2001-07-24 2016-05-23 半導体発光素子
JP2017008907A Expired - Lifetime JP6320582B2 (ja) 2001-07-24 2017-01-20 半導体発光素子
JP2018026341A Expired - Lifetime JP6627897B2 (ja) 2001-07-24 2018-02-16 半導体発光素子
JP2019141180A Pending JP2019216255A (ja) 2001-07-24 2019-07-31 半導体発光素子

Country Status (1)

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JP (9) JP5800452B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011027679A1 (ja) * 2009-09-07 2011-03-10 エルシード株式会社 半導体発光素子
JP5526712B2 (ja) * 2009-11-05 2014-06-18 豊田合成株式会社 半導体発光素子
JP2011129718A (ja) * 2009-12-17 2011-06-30 Showa Denko Kk 基板、テンプレート基板、半導体発光素子、半導体発光素子の製造方法、半導体発光素子を用いた照明装置および電子機器
JP6088807B2 (ja) 2012-11-19 2017-03-01 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP6048233B2 (ja) * 2013-03-12 2016-12-21 豊田合成株式会社 Ｉｉｉ 族窒化物半導体発光素子
JP6049875B2 (ja) 2013-05-31 2016-12-21 旭化成株式会社 Ｌｅｄ用パタンウェハ、及びｌｅｄ用エピタキシャルウェハ
CN103594580A (zh) * 2013-10-17 2014-02-19 江苏金来顺光电科技有限公司 一种高亮度led图形化的加工方法
JP6135751B2 (ja) * 2015-02-18 2017-05-31 日亜化学工業株式会社 発光素子
JP6229707B2 (ja) * 2015-11-26 2017-11-15 日亜化学工業株式会社 発光素子及びその製造方法
JP6927481B2 (ja) * 2016-07-07 2021-09-01 国立大学法人京都大学 Ｌｅｄ素子
JP7049823B2 (ja) * 2017-12-18 2022-04-07 旭化成株式会社 窒化物半導体発光素子
US10937928B2 (en) 2017-11-09 2021-03-02 Asahi Kasei Kabushiki Kaisha Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2513550Y2 (ja) * 1990-09-28 1996-10-09 日立電線株式会社 発光ダイオ―ド
JP2765256B2 (ja) * 1991-04-10 1998-06-11 日立電線株式会社 発光ダイオード
JPH0590634A (ja) * 1991-09-25 1993-04-09 Olympus Optical Co Ltd 発光ダイオ−ド
JPH05335622A (ja) * 1992-05-27 1993-12-17 Asahi Chem Ind Co Ltd 半導体発光装置
JP2937692B2 (ja) * 1993-05-27 1999-08-23 シャープ株式会社 半導体発光素子およびその製造方法
JPH07131070A (ja) * 1993-10-28 1995-05-19 Victor Co Of Japan Ltd 半導体発光素子及び半導体発光素子アレイ
JP3240097B2 (ja) * 1995-02-16 2001-12-17 シャープ株式会社 半導体発光素子
JP3863962B2 (ja) * 1997-03-25 2006-12-27 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子とその製造方法
JP3462370B2 (ja) * 1997-07-17 2003-11-05 三菱電線工業株式会社 ＧａＮ系結晶成長用基板およびその用途
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JP3987660B2 (ja) * 1998-07-31 2007-10-10 シャープ株式会社 窒化物半導体構造とその製法および発光素子
JP2000216431A (ja) * 1998-11-19 2000-08-04 Sanyo Electric Co Ltd 発光素子
JP2000174339A (ja) * 1998-12-04 2000-06-23 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子およびＧａＮ系半導体受光素子
JP2000216497A (ja) * 1999-01-22 2000-08-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP3471685B2 (ja) * 1999-03-17 2003-12-02 三菱電線工業株式会社 半導体基材及びその製造方法
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP3696003B2 (ja) * 1999-09-22 2005-09-14 三洋電機株式会社 窒化物系半導体層の形成方法
JP3427047B2 (ja) * 1999-09-24 2003-07-14 三洋電機株式会社 窒化物系半導体素子、窒化物系半導体の形成方法および窒化物系半導体素子の製造方法
KR100700993B1 (ko) * 1999-12-03 2007-03-30 크리, 인코포레이티드 향상된 광 적출 구조체를 갖는 발광 다이오드 및 그 제조 방법
JP2001223114A (ja) * 2000-02-08 2001-08-17 Funai Electric Co Ltd ノイズ除去ユニット
JP4026294B2 (ja) * 2000-03-07 2007-12-26 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP2002213490A (ja) * 2001-01-15 2002-07-31 Exedy Corp クラッチのアクチュエータ
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
US20070234238A1 (en) * 2005-03-10 2007-10-04 Kabushiki Kaisha Toshiba Document searching apparatus

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Publication number Publication date
JP2018117133A (ja) 2018-07-26
JP2019216255A (ja) 2019-12-19
JP2017130666A (ja) 2017-07-27
JP2013179304A (ja) 2013-09-09
JP2016189472A (ja) 2016-11-04
JP5973620B2 (ja) 2016-08-23
JP5835382B2 (ja) 2015-12-24
JP6320582B2 (ja) 2018-05-09
JP6096357B2 (ja) 2017-03-15
JP2009200514A (ja) 2009-09-03
JP2015181184A (ja) 2015-10-15
JP2014140061A (ja) 2014-07-31
JP5423819B2 (ja) 2014-02-19
JP2012119700A (ja) 2012-06-21
JP5590178B2 (ja) 2014-09-17
JP6627897B2 (ja) 2020-01-08

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