JP5794893B2 - 成膜方法および成膜装置 - Google Patents

成膜方法および成膜装置 Download PDF

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Publication number
JP5794893B2
JP5794893B2 JP2011238285A JP2011238285A JP5794893B2 JP 5794893 B2 JP5794893 B2 JP 5794893B2 JP 2011238285 A JP2011238285 A JP 2011238285A JP 2011238285 A JP2011238285 A JP 2011238285A JP 5794893 B2 JP5794893 B2 JP 5794893B2
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gas
substrate
film forming
susceptor
purge gas
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English (en)
Japanese (ja)
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JP2013098271A (ja
JP2013098271A5 (enExample
Inventor
鈴木　邦彦
邦彦 鈴木
佐藤　裕輔
裕輔 佐藤
義和 森山
義和 森山
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2011238285A priority Critical patent/JP5794893B2/ja
Priority to US13/661,362 priority patent/US20130104800A1/en
Priority to KR1020120119641A priority patent/KR101447663B1/ko
Publication of JP2013098271A publication Critical patent/JP2013098271A/ja
Publication of JP2013098271A5 publication Critical patent/JP2013098271A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011238285A 2011-10-31 2011-10-31 成膜方法および成膜装置 Active JP5794893B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011238285A JP5794893B2 (ja) 2011-10-31 2011-10-31 成膜方法および成膜装置
US13/661,362 US20130104800A1 (en) 2011-10-31 2012-10-26 Film-forming method and film-forming apparatus
KR1020120119641A KR101447663B1 (ko) 2011-10-31 2012-10-26 성막 방법 및 성막 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011238285A JP5794893B2 (ja) 2011-10-31 2011-10-31 成膜方法および成膜装置

Publications (3)

Publication Number Publication Date
JP2013098271A JP2013098271A (ja) 2013-05-20
JP2013098271A5 JP2013098271A5 (enExample) 2014-10-02
JP5794893B2 true JP5794893B2 (ja) 2015-10-14

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US (1) US20130104800A1 (enExample)
JP (1) JP5794893B2 (enExample)
KR (1) KR101447663B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018037537A (ja) * 2016-08-31 2018-03-08 株式会社ニューフレアテクノロジー 気相成長装置
JP6998839B2 (ja) * 2018-06-25 2022-01-18 グローバルウェーハズ・ジャパン株式会社 エピタキシャルシリコンウェーハの製造方法
JP2020043260A (ja) * 2018-09-12 2020-03-19 住友金属鉱山株式会社 多結晶膜の成膜方法、基板載置機構および成膜装置
DE102019132933A1 (de) * 2018-12-10 2020-06-10 Showa Denko K.K. Suszeptor und vorrichtung zur chemischen gasphasenabscheidung
JP7382836B2 (ja) * 2020-01-15 2023-11-17 東京エレクトロン株式会社 基板処理装置及び回転駆動方法
JP2021082824A (ja) * 2021-01-27 2021-05-27 株式会社ニューフレアテクノロジー 気相成長装置
KR102570336B1 (ko) * 2021-03-22 2023-08-25 김용한 질화갈륨 기판의 제조 장치
CN118854267A (zh) * 2024-09-25 2024-10-29 无锡展硕科技有限公司 一种半导体薄膜成膜系统及方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3061401B2 (ja) * 1990-07-20 2000-07-10 株式会社東芝 半導体気相成長装置
JP2990551B2 (ja) * 1992-01-16 1999-12-13 東京エレクトロン株式会社 成膜処理装置
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6133152A (en) * 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
JP2001053030A (ja) * 1999-08-11 2001-02-23 Tokyo Electron Ltd 成膜装置
KR100507753B1 (ko) * 2000-03-17 2005-08-10 가부시키가이샤 히타치세이사쿠쇼 반도체 제조방법 및 제조장치
JP4614252B2 (ja) * 2001-02-15 2011-01-19 キヤノンアネルバ株式会社 基板処理装置及びこれに用いられるコンピュータプログラム
CN100338734C (zh) * 2001-11-30 2007-09-19 信越半导体株式会社 基座、气相生长装置、外延晶片的制造装置、外延晶片的制造方法和外延晶片
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
WO2007018016A1 (ja) * 2005-08-05 2007-02-15 Hitachi Kokusai Electric Inc. 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法
JP4803578B2 (ja) * 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
JP5165952B2 (ja) * 2007-07-20 2013-03-21 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
KR101405346B1 (ko) * 2008-01-04 2014-06-12 삼성디스플레이 주식회사 기판 지지대, 이를 포함하는 기판 처리 장치 및 기판 정렬방법
KR101006647B1 (ko) * 2008-04-25 2011-01-10 가부시키가이샤 뉴플레어 테크놀로지 성막 장치 및 성막 방법

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US20130104800A1 (en) 2013-05-02
KR101447663B1 (ko) 2014-10-06
JP2013098271A (ja) 2013-05-20
KR20130047620A (ko) 2013-05-08

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