JP5792375B2 - 窒化ガリウムベースフィルムチップの生産方法および製造方法 - Google Patents
窒化ガリウムベースフィルムチップの生産方法および製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910002601 GaN Inorganic materials 0.000 title description 52
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 170
- 239000010410 layer Substances 0.000 claims description 100
- 229910052594 sapphire Inorganic materials 0.000 claims description 72
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- 239000011241 protective layer Substances 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 125000000623 heterocyclic group Chemical group 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 8
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 6
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- -1 ITO Inorganic materials 0.000 claims description 5
- 230000005496 eutectics Effects 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 229910017980 Ag—Sn Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 230000006835 compression Effects 0.000 claims 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 11
- 229910017604 nitric acid Inorganic materials 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229940107816 ammonium iodide Drugs 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
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- 230000017525 heat dissipation Effects 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- 101100434911 Mus musculus Angpt1 gene Proteins 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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Description
本発明は接着剤を採用してエピタキシャル層を何度も移転し、特にレーザー剥離する前にサファイアエピタキシャル層を接着剤で第一臨時基板に粘着し、この接着剤は適当な強度及び硬度を有するので、サファィア基板を剥離しているところ、窒化ガリウム分解エネルギーが均一ではないので招くサファイア整体が窒化ガリウムフィルムに対する引き裂き強度を効果的に下げることができ、従って窒化ガリウムフィルムに対する損傷を下げ、このような製造方法によって獲得したGaNベースフィルムチップの歩留まりを大きく高めることができる。
移転を何度も採用し、第二回の移転過程において接合方式で第二臨時基板を固定するので、第一臨時基板及び対応する接着剤を順調に腐食することができ、この製造方法は便利をもたらし、生産の歩留まりを高める。
先ず永久支持基板接合を行ってから、永久接合した基板を適切な粘着材料で臨時基板に結合し、粘着材料は一定の硬度及び強度を有するので、後のレーザー剥離過程において、GaN層に対する引き裂き現象が減少し、GaNフィルムチップの歩留まりを高める。
<実施例1>
<実施例2>
<実施例3>
<実施例4>
Claims (14)
- a.サファイア基板上にn型GaN層、活性層、P型GaN層を順番に成長して半導体多層構造を形成するステップと、
b.前記サファイア基板に対して肉薄化及び研磨処理を行うステップと、
c.前記半導体多層構造の上に第一接着剤を塗布して、第一臨時基板と固化するステップと、
d.前記サファイア基板に対してレーザー剥離を行い、剥離した後の面に第二接着剤を塗布して、第二臨時基板と固化するステップと、
e.前記第一臨時基板及び前記第一接着剤を除去するステップと、
f.共晶接合方式を採用して半導体多層構造と永久支持基板を結合するステップと、
g.前記第二臨時基板及び前記第二接着剤を除去するステップと、
を備え、
前記第一接着剤は高温エポキシ樹脂接着剤であり、その固化した後のショア硬度は80〜100Dであり、耐温度範囲は−25〜300℃であり、曲げ強度は80〜120MPaであり、圧縮強度は200〜300MPaであり、
前記第二接着剤は複素環樹脂であり、その耐温度範囲は−55〜+420℃であり、引張り強度は60〜100MPaであり、曲げ強度は105〜200MPaであり、
前記共晶接合方式はAu−Sn接合であり、温度は200〜400℃である、
ことを特徴とするGaNベースフィルムチップの製造方法。 - 前記半導体多層構造の上には導電反射複合金属層が蒸着されており、且つ合金処理を行い、合金温度は400〜600℃であることを特徴とする請求項1に記載のGaNベースフィルムチップの製造方法。
- 前記第一接着剤の厚さは10〜100マイクロメートルであり、固化温度は80〜160℃であり、固化時間は30〜120分間であることを特徴とする請求項1又は2に記載のGaNベースフィルムチップの製造方法。
- 前記第二接着剤の厚さは5〜30マイクロメートルであり、固化温度は120〜180℃であり、固化時間は10〜60分間であることを特徴とする請求項1乃至3のいずれかに記載のGaNベースフィルムチップの製造方法。
- サファイア基板上のエピタキシャル層をエッチングするステップと、
エッチングした前記エピタキシャル層上に反射層材料を作製し、且つ合金処理を行うステップと、
永久支持基板と接合するステップと、
前記永久支持基板の他側で樹脂を採用して第二基板と固化するステップと、
前記サファイア基板をレーザー剥離するステップと、
剥離してから前記第二基板及び前記樹脂を除去するステップと、
を備えることを特徴とする請求項1乃至4のいずれかに記載のGaNベースフィルムチップの製造方法。 - 前記エッチングはICP又はRIEドライエッチングを採用し、エッチング厚さは少なくとも1マイクロメートルであることを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記反射層材料は、Ti、Ni、Al、Pt、Pd、Au、Cr、Ag、SiO2、TiO2、ITO、Al2O3、MgF2の中の一種又は多種を備え、前記反射層材料の厚さは500〜4000オングストロームであることを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記反射層材料の外面にさらに保護層があり、前記保護層の材料は、Ti、Ni、Al、Pt、Pd、Au、Cr、Ag、SiO2、TiO2、ITO、Al2O3、MgF2の中の一種又は多種を備え、前記保護層材料の厚さは1000〜10000オングストロームであることを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記接合はAu−Au、Au−In、In−In、Ag−In、Ag−Sn又はIn−Snの中の一種を採用することを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記樹脂はエポキシタイプ樹脂又はアクリル酸タイプ樹脂であることができ、固化方式は熱固化又はUV固化であり、固化した後の硬度はshore D10−95であることを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記樹脂はエポキシタイプ樹脂又はアクリル酸タイプ樹脂であることができ、固化方式は熱固化又はUV固化であり、固化した後の硬度はshore D50−90であることを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記剥離は順次走査を採用し、レーザー波長は355nmであることを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記剥離は単結晶粒子剥離を採用し、レーザー波長は248nm又は192nmであることを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
- 前記第二基板は、Si、セラミック、W、Cu、Mo、GaAs、石墨、ガラス、サファイア、有機材料などの中の一種又は多種を採用し、ウェットエッチング、機械研磨又は順次剥離する方法を採用して前記第二基板を除去することを特徴とする請求項5に記載のGaNベースフィルムチップの製造方法。
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CN201110132454.0A CN102790139B (zh) | 2011-05-19 | 基于蓝宝石剥离的薄膜GaN芯片的制造方法 | |
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