CN103887218B - 一种GaN基白光倒装芯片的制备方法 - Google Patents
一种GaN基白光倒装芯片的制备方法 Download PDFInfo
- Publication number
- CN103887218B CN103887218B CN201210561072.4A CN201210561072A CN103887218B CN 103887218 B CN103887218 B CN 103887218B CN 201210561072 A CN201210561072 A CN 201210561072A CN 103887218 B CN103887218 B CN 103887218B
- Authority
- CN
- China
- Prior art keywords
- glue
- white light
- gan base
- preparation
- chip according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 230000012010 growth Effects 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 238000007711 solidification Methods 0.000 claims description 10
- 230000008023 solidification Effects 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 206010040844 Skin exfoliation Diseases 0.000 claims description 2
- 238000001723 curing Methods 0.000 claims description 2
- 230000035618 desquamation Effects 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 238000000016 photochemical curing Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000008021 deposition Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210561072.4A CN103887218B (zh) | 2012-12-21 | 2012-12-21 | 一种GaN基白光倒装芯片的制备方法 |
PCT/CN2013/001607 WO2014094363A1 (zh) | 2012-12-21 | 2013-12-20 | 一种GaN基白光倒装芯片的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210561072.4A CN103887218B (zh) | 2012-12-21 | 2012-12-21 | 一种GaN基白光倒装芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103887218A CN103887218A (zh) | 2014-06-25 |
CN103887218B true CN103887218B (zh) | 2018-03-09 |
Family
ID=50956052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210561072.4A Active CN103887218B (zh) | 2012-12-21 | 2012-12-21 | 一种GaN基白光倒装芯片的制备方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103887218B (zh) |
WO (1) | WO2014094363A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409523A (zh) * | 2014-11-28 | 2015-03-11 | 江阴长电先进封装有限公司 | 一种半导体器件的封装结构 |
WO2016120400A1 (en) | 2015-01-30 | 2016-08-04 | Osram Opto Semiconductors Gmbh | Method for producing a semiconductor component and semiconductor component |
CN106816519A (zh) * | 2015-12-02 | 2017-06-09 | 佛山市国星半导体技术有限公司 | 白光led成品及其制作方法 |
CN107482088A (zh) * | 2017-06-29 | 2017-12-15 | 西安交通大学 | 一种超柔性氮化镓基金字塔结构半导体器件及其制备方法 |
CN111446340B (zh) * | 2018-05-04 | 2022-08-02 | 天津三安光电有限公司 | 一种微型发光元件及其制作方法 |
CN110660886A (zh) * | 2018-06-28 | 2020-01-07 | 山东浪潮华光光电子股份有限公司 | 一种反极性AlGaInP四元LED芯片的制备方法 |
CN109820481B (zh) * | 2019-02-22 | 2021-10-01 | 中国科学院半导体研究所 | 神经光电极及其制备方法 |
CN110224002A (zh) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | 一种microLED面板制备方法及制备设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101872813A (zh) * | 2009-04-24 | 2010-10-27 | 刘胜 | 发光二极管芯片及其制造方法 |
EP2302705A2 (en) * | 2008-06-02 | 2011-03-30 | Korea University Industrial & Academic Collaboration Foundation | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
CN102244610A (zh) * | 2011-06-24 | 2011-11-16 | 吉林中软吉大信息技术有限公司 | 一种利用捕获数据来解析协议的方法 |
CN102790137A (zh) * | 2011-05-19 | 2012-11-21 | 晶能光电(江西)有限公司 | GaN基薄膜芯片的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101070472A (zh) * | 2007-06-15 | 2007-11-14 | 中国科学院上海光学精密机械研究所 | 稀土离子或过渡金属离子掺杂的铝镁酸钪荧光衬底 |
CN102136533A (zh) * | 2008-01-24 | 2011-07-27 | 晶元光电股份有限公司 | 发光元件的制造方法 |
CN102185073B (zh) * | 2011-04-01 | 2012-09-19 | 厦门市三安光电科技有限公司 | 一种倒装发光二极管及其制作方法 |
EP2711991A4 (en) * | 2011-05-19 | 2015-05-20 | Lattice Power Jiangxi Corp | METHOD FOR PRODUCING A FILM CHIP ON GALLIUM NITRIDE BASE |
CN102354723B (zh) * | 2011-10-24 | 2013-11-20 | 南昌黄绿照明有限公司 | 一种倒装半导体发光器件及其制造方法 |
CN102584015B (zh) * | 2012-01-11 | 2015-01-28 | 华中科技大学 | 发白光玻璃及其制备方法 |
-
2012
- 2012-12-21 CN CN201210561072.4A patent/CN103887218B/zh active Active
-
2013
- 2013-12-20 WO PCT/CN2013/001607 patent/WO2014094363A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2302705A2 (en) * | 2008-06-02 | 2011-03-30 | Korea University Industrial & Academic Collaboration Foundation | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
CN101872813A (zh) * | 2009-04-24 | 2010-10-27 | 刘胜 | 发光二极管芯片及其制造方法 |
CN102790137A (zh) * | 2011-05-19 | 2012-11-21 | 晶能光电(江西)有限公司 | GaN基薄膜芯片的制备方法 |
CN102244610A (zh) * | 2011-06-24 | 2011-11-16 | 吉林中软吉大信息技术有限公司 | 一种利用捕获数据来解析协议的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103887218A (zh) | 2014-06-25 |
WO2014094363A1 (zh) | 2014-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103887218B (zh) | 一种GaN基白光倒装芯片的制备方法 | |
CN104217997B (zh) | 3d封装件及其形成方法 | |
JP6237181B2 (ja) | 発光装置の製造方法 | |
JP6203759B2 (ja) | Ledチップの製造方法 | |
US7179670B2 (en) | Flip-chip light emitting diode device without sub-mount | |
RU2466480C2 (ru) | Удаление подложки в ходе формирования сид | |
CN104465418B (zh) | 一种扇出晶圆级封装方法 | |
TW200414456A (en) | Heat spreader and semiconductor device and package using the same | |
US8319247B2 (en) | Carrier for a light emitting device | |
TW200908249A (en) | Structure of semiconductor device package and the method of the same | |
JP2010056458A (ja) | 発光素子の製造方法 | |
TW201034130A (en) | Semiconductor package structure and manufacturing method thereof | |
TW201114067A (en) | Reflective substrate for LEDs | |
EP2689458B1 (en) | Patterned uv sensitive silicone-phosphor layer over leds, and method for fabricating the same | |
CN103647012A (zh) | 一种用于led的晶圆级封装的芯片转移方法 | |
TWI289943B (en) | Manufacturing method for semiconductor light emitting device | |
JP2011187941A (ja) | ウエハレベルパッケージの製造方法 | |
TW201505214A (zh) | 具有光學元件而不具有基板載體之印刷電路發光裝置 | |
CN208093589U (zh) | 一种带围坝的陶瓷线路板结构 | |
TW201250923A (en) | Pre-cut wafer applied underfill film | |
TW201212294A (en) | LED chip modules, method for packaging the LED chip modules, and moving fixture thereof | |
CN101964388B (zh) | 发光器件封装及其制造方法 | |
CN107833866A (zh) | 一次封装成型的增强散热的封装结构及制造方法 | |
CN104347787B (zh) | 一种led发光单元的制备方法 | |
TWI237411B (en) | Process and structure for packaging LED's |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
EXSB | Decision made by sipo to initiate substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220126 Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: LATTICE POWER (JIANGXI) Corp. Address before: 213164 No.7, Fengxiang Road, Wujin high tech Industrial Development Zone, Changzhou City, Jiangsu Province Patentee before: LATTICE POWER (CHANGZHOU) Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |