JP5791896B2 - 太陽電池製造のための小さなコンタクトのアレイ - Google Patents

太陽電池製造のための小さなコンタクトのアレイ Download PDF

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Publication number
JP5791896B2
JP5791896B2 JP2010510284A JP2010510284A JP5791896B2 JP 5791896 B2 JP5791896 B2 JP 5791896B2 JP 2010510284 A JP2010510284 A JP 2010510284A JP 2010510284 A JP2010510284 A JP 2010510284A JP 5791896 B2 JP5791896 B2 JP 5791896B2
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solar cell
wafer
dielectric layer
manufacturing
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Expired - Fee Related
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JP2010510284A
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Japanese (ja)
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JP2010528487A (ja
JP2010528487A5 (enExample
Inventor
カズンズ，ピーター，ジョン
カジノヴィク，マイケル，ジェイ
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SunPower Corp
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SunPower Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2010510284A 2007-05-29 2008-05-12 太陽電池製造のための小さなコンタクトのアレイ Expired - Fee Related JP5791896B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/807,567 2007-05-29
US11/807,567 US7838062B2 (en) 2007-05-29 2007-05-29 Array of small contacts for solar cell fabrication
PCT/US2008/006017 WO2008150344A1 (en) 2007-05-29 2008-05-12 Array of small contacts for solar cell fabrication

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014080282A Division JP5767359B2 (ja) 2007-05-29 2014-04-09 太陽電池の製造方法

Publications (3)

Publication Number Publication Date
JP2010528487A JP2010528487A (ja) 2010-08-19
JP2010528487A5 JP2010528487A5 (enExample) 2011-06-30
JP5791896B2 true JP5791896B2 (ja) 2015-10-07

Family

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JP2010510284A Expired - Fee Related JP5791896B2 (ja) 2007-05-29 2008-05-12 太陽電池製造のための小さなコンタクトのアレイ
JP2014080282A Expired - Fee Related JP5767359B2 (ja) 2007-05-29 2014-04-09 太陽電池の製造方法

Family Applications After (1)

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JP2014080282A Expired - Fee Related JP5767359B2 (ja) 2007-05-29 2014-04-09 太陽電池の製造方法

Country Status (7)

Country Link
US (2) US7838062B2 (enExample)
EP (1) EP2153466B1 (enExample)
JP (2) JP5791896B2 (enExample)
KR (1) KR101384498B1 (enExample)
CN (1) CN101681902B (enExample)
AU (1) AU2008260627B2 (enExample)
WO (1) WO2008150344A1 (enExample)

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US8586403B2 (en) 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
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US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
US9337369B2 (en) * 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US9911874B2 (en) * 2014-05-30 2018-03-06 Sunpower Corporation Alignment free solar cell metallization
US9559219B1 (en) * 2014-06-23 2017-01-31 Sandia Corporation Fast process flow, on-wafer interconnection and singulation for MEPV
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Also Published As

Publication number Publication date
EP2153466A4 (en) 2014-04-09
JP2010528487A (ja) 2010-08-19
EP2153466B1 (en) 2015-10-21
US20080299297A1 (en) 2008-12-04
KR101384498B1 (ko) 2014-04-14
CN101681902A (zh) 2010-03-24
US8883247B2 (en) 2014-11-11
AU2008260627B2 (en) 2013-08-15
US20110061731A1 (en) 2011-03-17
JP5767359B2 (ja) 2015-08-19
CN101681902B (zh) 2012-07-04
EP2153466A1 (en) 2010-02-17
JP2014168076A (ja) 2014-09-11
US7838062B2 (en) 2010-11-23
KR20100017457A (ko) 2010-02-16
WO2008150344A1 (en) 2008-12-11
AU2008260627A1 (en) 2008-12-11

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