JP2010528487A - 太陽電池製造のための小さなコンタクトのアレイ - Google Patents
太陽電池製造のための小さなコンタクトのアレイ Download PDFInfo
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
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- H—ELECTRICITY
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
Description
Claims (20)
- 太陽電池へと加工されるウェハ上に第1の誘電層を形成し、
前記第1の誘電層上に複数の第2の誘電層を形成し、
前記第2の誘電層間の少なくとも開口に、複数のドットをインクジェット印刷し、前記ドットの交差部によって形成された複数のギャップを形成し、該ギャップの間隔が、前記ドットを供給するインクジェットプリンタノズルの整合によって決定される、太陽電池の製造方法。 - 前記第2の誘電層が、前記ウェハ上にスクリーン印刷されたポリイミドを含む、請求項1に記載の方法。
- 前記複数のドットをマスクとして使用して、前記第1の誘電層を貫通するコンタクト領域を形成し、
前記ウェハから前記複数のドットを除去し、
前記第1の誘電層に金属コンタクトフィンガーを形成し、前記コンタクト領域を通して、前記第1の誘電層の下に設けられている拡散領域との電気的な接続を形成する
ことをさらに含む、請求項1に記載の方法。 - 少なくともいくつかの金属コンタクトフィンガーが、少なくともいくつかのコンタクト領域を通って、対応するN型拡散領域との電気的な接続を生成するために形成されたN型金属コンタクトフィンガーと、少なくともいくつかのコンタクト領域を通って、対応するP型拡散領域との電気的な接続を生成するために形成されたP型金属コンタクトフィンガーとを含み、
前記P型及びN型拡散領域が、前記ウェハの、通常の運転時に太陽の方を向くウェハの前面とは反対側の背面に形成されている、請求項3に記載の方法。 - 前記第2の誘電層上に、前記N型金属コンタクトフィンガーが形成され、前記P型金属コンタクトフィンガーが形成されていない、請求項4に記載の方法。
- 前記第1の誘電層が二酸化シリコンを含み、前記第2の誘電層がポリイミドを含む、請求項1に記載の方法。
- 前記ドットが、ノズルを有するプリントヘッドの、前記ウェハ上での一方向での1回のパスで印刷される、請求項1に記載の方法。
- 少なくとも別のパスで、ウェハ上でプリントヘッドを通過させ、複数のギャップのうち1つのギャップを覆う別のドットを印刷することをさらに含む、請求項7に記載の方法。
- 太陽電池ウェハ上に第1の誘電層を形成し、
前記第1の誘電層上に複数の第2の誘電層を形成し、
少なくとも、2つの前記第2の誘電層の間の開口に、複数のドットを印刷し、前記複数のドットが、複数のギャップを形成するコンタクトマスクを形成し、前記ギャップのそれぞれが、前記複数のドットにおいて重ねられたドットの交差部によって画定され、
前記第1の誘電層の、前記ギャップを通って露出している部分をエッチングし、複数のコンタクト領域を形成して、太陽電池の複数の拡散領域を露出させる
ことを含む、太陽電池の製造方法。 - 前記複数のドットを前記ウェハから除去し、
前記複数のコンタクト領域内に金属コンタクトフィンガーを形成し、複数の拡散領域のうち対応するものに電気的に接続すること
をさらに含む、請求項9に記載の方法。 - 前記金属コンタクトフィンガーのいくつかが、太陽電池の背面にある複数の拡散領域のN型拡散領域に電気的に接続されているN型金属コンタクトフィンガーを含み、
前記金属コンタクトフィンガーのいくつかが、太陽電池の背面にある複数の拡散領域のP型拡散領域に電気的に接続されているP型金属コンタクトフィンガーを含む、請求項10に記載の方法。 - 前記複数の第2の誘電層が、前記第1の誘電層上にスクリーン印刷されている、請求項9に記載の方法。
- 前記複数のドットが、インクジェットプリンタを用いて印刷されている、請求項9に記載の方法。
- 前記複数の第2の誘電層がポリイミドを含む、請求項9に記載の方法。
- 前記第1の誘電層が二酸化シリコンを含む、請求項9に記載の方法。
- 太陽電池ウェハ上で、2つの誘電層間の開口に複数のドットを印刷し、該複数のドットがギャップを画定し、該ギャップがそれぞれ、前記複数のドットにおいて重ねられたドットの交差部によって形成されており、前記ギャップ間の間隔が、前記複数のドットを供給するノズルの物理的な整合によって規定され、その場合、前記複数のドットが、該複数のドットが上に印刷された太陽電池ウェハの特徴的構造に臨界的に整合しておらず、
前記複数のドットをエッチングマスクとして使用して前記複数のドットの下の別の層をエッチングし、それにより、下層の拡散領域へのコンタクト領域を形成し、該コンタクト領域が、前記ギャップによって画定されており、
前記別の層の上に金属コンタクトフィンガーを形成し、該金属コンタクトフィンガーが、前記コンタクト領域を通って前記下層の拡散領域に電気的に接続している、太陽電池の製造方法。 - 前記別の層が二酸化シリコンを含む、請求項16に記載の方法。
- 前記2つの誘電層がポリイミドを含む、請求項16に記載の方法。
- 前記金属コンタクトフィンガーがN型金属コンタクトフィンガーを含み、前記下層の拡散領域がN型拡散領域を含む、請求項16に記載の方法。
- 前記複数のドットが、ウェハ上でのインクジェットプリンタの1回のパスで一方向で印刷される、請求項16に記載の方法。
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| Application Number | Priority Date | Filing Date | Title |
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| US11/807,567 | 2007-05-29 | ||
| US11/807,567 US7838062B2 (en) | 2007-05-29 | 2007-05-29 | Array of small contacts for solar cell fabrication |
| PCT/US2008/006017 WO2008150344A1 (en) | 2007-05-29 | 2008-05-12 | Array of small contacts for solar cell fabrication |
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| JP2014080282A Division JP5767359B2 (ja) | 2007-05-29 | 2014-04-09 | 太陽電池の製造方法 |
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| JP2010528487A true JP2010528487A (ja) | 2010-08-19 |
| JP2010528487A5 JP2010528487A5 (ja) | 2011-06-30 |
| JP5791896B2 JP5791896B2 (ja) | 2015-10-07 |
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| JP2014080282A Expired - Fee Related JP5767359B2 (ja) | 2007-05-29 | 2014-04-09 | 太陽電池の製造方法 |
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| US (2) | US7838062B2 (ja) |
| EP (1) | EP2153466B1 (ja) |
| JP (2) | JP5791896B2 (ja) |
| KR (1) | KR101384498B1 (ja) |
| CN (1) | CN101681902B (ja) |
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- 2008-05-12 EP EP08754346.8A patent/EP2153466B1/en not_active Not-in-force
- 2008-05-12 CN CN2008800161241A patent/CN101681902B/zh active Active
- 2008-05-12 JP JP2010510284A patent/JP5791896B2/ja not_active Expired - Fee Related
- 2008-05-12 WO PCT/US2008/006017 patent/WO2008150344A1/en not_active Ceased
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2014168076A (ja) * | 2007-05-29 | 2014-09-11 | Sunpower Corp | 太陽電池の製造方法 |
| JP2017028329A (ja) * | 2011-02-15 | 2017-02-02 | サンパワー コーポレイション | 太陽電池の製造方法及び構造 |
| JP2018195860A (ja) * | 2011-02-15 | 2018-12-06 | サンパワー コーポレイション | 太陽電池の製造方法及び構造 |
| WO2019082495A1 (ja) | 2017-10-26 | 2019-05-02 | 信越化学工業株式会社 | ポリイミドペーストの乾燥方法及び高光電変換効率太陽電池の製造方法 |
| KR20200079488A (ko) | 2017-10-26 | 2020-07-03 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 폴리이미드 페이스트의 건조 방법 및 고광전변환효율 태양전지의 제조 방법 |
| US11742439B2 (en) | 2017-10-26 | 2023-08-29 | Shin-Etsu Chemical Co., Ltd. | Drying method of polyimide paste and manufacturing method of solar cell having high photoelectric conversion efficiency |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2153466A4 (en) | 2014-04-09 |
| JP5791896B2 (ja) | 2015-10-07 |
| EP2153466B1 (en) | 2015-10-21 |
| US20080299297A1 (en) | 2008-12-04 |
| KR101384498B1 (ko) | 2014-04-14 |
| CN101681902A (zh) | 2010-03-24 |
| US8883247B2 (en) | 2014-11-11 |
| AU2008260627B2 (en) | 2013-08-15 |
| US20110061731A1 (en) | 2011-03-17 |
| JP5767359B2 (ja) | 2015-08-19 |
| CN101681902B (zh) | 2012-07-04 |
| EP2153466A1 (en) | 2010-02-17 |
| JP2014168076A (ja) | 2014-09-11 |
| US7838062B2 (en) | 2010-11-23 |
| KR20100017457A (ko) | 2010-02-16 |
| WO2008150344A1 (en) | 2008-12-11 |
| AU2008260627A1 (en) | 2008-12-11 |
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