KR101384498B1 - 태양 전지 제조를 위한 소형 컨택트 어레이 - Google Patents

태양 전지 제조를 위한 소형 컨택트 어레이 Download PDF

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Publication number
KR101384498B1
KR101384498B1 KR1020097024837A KR20097024837A KR101384498B1 KR 101384498 B1 KR101384498 B1 KR 101384498B1 KR 1020097024837 A KR1020097024837 A KR 1020097024837A KR 20097024837 A KR20097024837 A KR 20097024837A KR 101384498 B1 KR101384498 B1 KR 101384498B1
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South Korea
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solar cell
wafer
metal contact
regions
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Korean (ko)
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KR20100017457A (ko
Inventor
피터 존 코신스
마이클 제이. 커드지노빅
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선파워 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
KR1020097024837A 2007-05-29 2008-05-12 태양 전지 제조를 위한 소형 컨택트 어레이 Expired - Fee Related KR101384498B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/807,567 2007-05-29
US11/807,567 US7838062B2 (en) 2007-05-29 2007-05-29 Array of small contacts for solar cell fabrication
PCT/US2008/006017 WO2008150344A1 (en) 2007-05-29 2008-05-12 Array of small contacts for solar cell fabrication

Publications (2)

Publication Number Publication Date
KR20100017457A KR20100017457A (ko) 2010-02-16
KR101384498B1 true KR101384498B1 (ko) 2014-04-14

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KR1020097024837A Expired - Fee Related KR101384498B1 (ko) 2007-05-29 2008-05-12 태양 전지 제조를 위한 소형 컨택트 어레이

Country Status (7)

Country Link
US (2) US7838062B2 (enExample)
EP (1) EP2153466B1 (enExample)
JP (2) JP5791896B2 (enExample)
KR (1) KR101384498B1 (enExample)
CN (1) CN101681902B (enExample)
AU (1) AU2008260627B2 (enExample)
WO (1) WO2008150344A1 (enExample)

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US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
US8211731B2 (en) 2010-06-07 2012-07-03 Sunpower Corporation Ablation of film stacks in solar cell fabrication processes
US8263899B2 (en) 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US8586403B2 (en) 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8692111B2 (en) 2011-08-23 2014-04-08 Sunpower Corporation High throughput laser ablation processes and structures for forming contact holes in solar cells
US8822262B2 (en) 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
US8513045B1 (en) 2012-01-31 2013-08-20 Sunpower Corporation Laser system with multiple laser pulses for fabrication of solar cells
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US9911874B2 (en) * 2014-05-30 2018-03-06 Sunpower Corporation Alignment free solar cell metallization
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USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
JP6875252B2 (ja) 2017-10-26 2021-05-19 信越化学工業株式会社 ポリイミドペーストの乾燥方法及び高光電変換効率太陽電池の製造方法
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Also Published As

Publication number Publication date
EP2153466A4 (en) 2014-04-09
JP5791896B2 (ja) 2015-10-07
JP2010528487A (ja) 2010-08-19
EP2153466B1 (en) 2015-10-21
US20080299297A1 (en) 2008-12-04
CN101681902A (zh) 2010-03-24
US8883247B2 (en) 2014-11-11
AU2008260627B2 (en) 2013-08-15
US20110061731A1 (en) 2011-03-17
JP5767359B2 (ja) 2015-08-19
CN101681902B (zh) 2012-07-04
EP2153466A1 (en) 2010-02-17
JP2014168076A (ja) 2014-09-11
US7838062B2 (en) 2010-11-23
KR20100017457A (ko) 2010-02-16
WO2008150344A1 (en) 2008-12-11
AU2008260627A1 (en) 2008-12-11

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