JP5791870B2 - 半導体装置を製造するための方法 - Google Patents
半導体装置を製造するための方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 49
- 239000002019 doping agent Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- -1 phosphorus ions Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Description
− 第一の酸化物層が、第一の導電性タイプの基板の第一のメインサイドの上に作られ;
− 少なくとも一つの開口を備えた、成形された(structured)ゲート電極層が、第一の酸化物層のトップの上の第一のメインサイドの上に作られ;
− 第一の導電性タイプの第一のドーパントが、前記成形されたゲート電極層をマスクとして用いて、第一のメインサイドで基板の中に注入され;
− 第一のドーパントが基板の中に拡散され;
− 第二の導電性タイプの第二のドーパントが、第一のメインサイドで基板の中に注入され;
− 第二のドーパントが基板の中に拡散される;
方法において、
− 第一のドーパントを基板の中に拡散させた後、且つ第二のドーパントを基板の中に注入する前に、第一の酸化物層が部分的に取り除かれて、ゲート酸化物層がもたらされること;及び、
− 前記成形されたゲート電極層が、第二のドーパントを注入するためのマスクとして使用されること;
を特徴とする方法。
これらの図面の中で使用されている参照符号、及びそれらの意味は、参照符号のリストの中にまとめられている。一般的に、同様なまたは同様な機能の部分に対して、同一の参照符号が付されている。記載された実施形態は、例として示されたものであって、本発明を限定するものではない。
以下に、本願出願時の特許請求の範囲に記載された発明を付記する。
[1]半導体装置を製造するための方法であって:
第一の酸化物層(22)が、第一の導電性タイプの基板(1)の第一のメインサイドの上に作られ;
少なくとも一つの開口(31)を備えたゲート電極層(3,3’)が、第一の酸化物層(22)のトップの上の第一のメインサイドの上に作られ;
第一の導電性タイプの第一のドーパントが、ゲート電極層(3,3’)をマスクとして用いて、第一のメインサイドで基板(1)の中に注入され;
第一のドーパントが基板(1)の中に拡散され;
第二の導電性タイプの第二のドーパントが、第一のメインサイドで基板(1)の中に注入され;
第二のドーパントが、基板(1)の中に拡散される;
製造ステップを有する方法において、
基板(1)の中に第一のドーパントを拡散させた後、且つ基板(1)の中に第二のドーパントを注入する前に、第一の酸化物層(22)が部分的に取り除かれること;及び、
ゲート電極層(3,3’)が、第二のドーパントを注入するためのマスクとして使用されること;
を特徴とする方法。
[2]下記特徴を有する前記[1]に記載の方法:
第一の酸化物層(22)は、ゲート電極層(3,3’)の、前記少なくとも一つの開口(31)が配置された領域の中で取り除かれ、ゲート酸化物層(2)がもたらされる。
[3]下記特徴を有する前記[1]または[2]に記載の方法:
第一のドーパントは、燐および/または砒素のイオンである。
[4]下記特徴を有する前記[1]から[3]のいずれか1つに記載の方法:
第一のドーパントは、40〜150keVのエネルギー、および/または、1*10 12 〜1*10 14 cm 2 のドーズ量で注入される。
[5]下記特徴を有する前記[1]から[4]のいずれか1つに記載の方法:
第一のドーパントは、少なくとも1μmの深さまで、最大10μmで、特に最大8μmで、そして特に最大6μmで、基板(1)の中に拡散される。
[6]下記特徴を有する前記[1]から[3]のいずれか1つに記載の方法:
第二のドーパントは、硼素、アルミニウム、ガリウム、および/または、インジウムのイオンである。
[7]下記特徴を有する前記[1]から[3]のいずれか1つに記載の方法:
第二のドーパントは、20〜120keVのエネルギー、および/または、5*10 13 〜3*10 14 /cm 2 のドーズ量で注入される。
[8]下記特徴を有する前記[1]から[3]のいずれか1つに記載の方法:
第二のドーパントは、0.5μmと9μmの間、特に0.5μmと7μmとの間、そして特に0.5μmと5μmの間の範囲内の最大深さ(54)まで、基板(1)の中に拡散される。
Claims (8)
- 半導体装置を製造するための方法であって、
前記方法は、以下の製造ステップ、即ち、
第一の酸化物層(22)が、第一の導電性タイプの基板(1)の第一のメインサイド上に作られるステップと、
少なくとも一つの開口(31)を備えたゲート電極層(3,3’)が、前記第一の酸化物層(22)の第一のメインサイド上に作られるステップと、
第一の導電性タイプの第一のドーパントが、前記ゲート電極層(3,3’)をマスクとして用いて、前記少なくとも一つの開口(31)と前記第一の酸化物層(22)とを通して、第一のメインサイドで前記基板(1)中に注入されるステップと、
注入された第一のドーパントが前記基板(1)中に拡散され、エンハンスメント領域(4)が形成されるステップと、
前記少なくとも一つの開口(31)が配置された領域の下の前記第一の酸化物層(22)が取り除かれるステップと、
第二の導電性タイプの第二のドーパントが、前記ゲート電極層(3,3’)をマスクとして用いて、前記第一の酸化物層(22)は通すことなく、前記少なくとも一つの開口(31)を通して、第一のメインサイドで前記エンハンスメント領域(4)中に注入されるステップと、ここで、第二のドーパントの注入に使用されたマスクは、前記第一のドーパントの注入に使用されたマスクに自己整合する、
注入された第二のドーパントが、前記エンハンスメント領域(4)中に拡散され、ベース領域(5)が、前記エンハンスメント領域(4)内に形成されるステップと、
を含み、
その結果、前記ベース領域(5)は、中央領域において深さ(53)を有し、
前記中央領域における前記深さ(53)は、前記ベース領域(5)の最大深さ(54)より浅く、
前記ベース領域(5)の最大深さ(54)を有する箇所は、前記中央領域の外側にある、ことを特徴とする方法。 - 前記第一の酸化物層(22)は、前記少なくとも一つの開口(31)が配置された領域において取り除かれ、前記ゲート電極層(3,3’)と前記基板(1)との間に残った前記第一の酸化物層(22)が、ゲート酸化物層(2)としてもたらされる、ことを特徴とする請求項1に記載の方法。
- 第一のドーパントは、燐または砒素のイオンである、ことを特徴とする請求項1または2に記載の方法。
- 第一のドーパントは、40〜150keVのエネルギー、および1*1012〜1*1014/cm2 のドーズ量、の少なくとも一方で注入される、ことを特徴とする請求項1乃至3の何れか1項に記載の方法。
- 第一のドーパントは、基板(1)の中に1乃至10μmの深さまで拡散される、ことを特徴とする請求項1乃至4の何れか1項に記載の方法。
- 第二のドーパントは、硼素、アルミニウム、ガリウム、または、インジウムのイオンである、ことを特徴とする請求項1乃至3の何れか1項に記載の方法。
- 第二のドーパントは、20〜120keVのエネルギー、および5*1013〜3*1014/cm2 のドーズ量、のうちの少なくとも一方で注入される、ことを特徴とする請求項1乃至3の何れか1項に記載の方法。
- 第二のドーパントは、基板(1)の中に0.5乃至9μmの深さまで拡散される、ことを特徴とする請求項1乃至3の何れか1項に記載の方法。
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EP08171450.3 | 2008-12-12 | ||
EP08171450A EP2197025B1 (en) | 2008-12-12 | 2008-12-12 | Method for manufacturing a power semiconductor device |
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US (1) | US8324062B2 (ja) |
EP (1) | EP2197025B1 (ja) |
JP (1) | JP5791870B2 (ja) |
CN (1) | CN101770949B (ja) |
AT (1) | ATE507581T1 (ja) |
DE (1) | DE602008006579D1 (ja) |
ES (1) | ES2364870T3 (ja) |
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WO2011157814A2 (en) * | 2010-06-17 | 2011-12-22 | Abb Technology Ag | Power semiconductor device |
CN103839989A (zh) * | 2012-11-23 | 2014-06-04 | 中国科学院微电子研究所 | 一种带缓冲层的低压igbt及其制作方法 |
CN103839988A (zh) * | 2012-11-23 | 2014-06-04 | 中国科学院微电子研究所 | Empt-ti-igbt器件的结构及其制备方法 |
CN103872115A (zh) * | 2012-12-13 | 2014-06-18 | 中国科学院微电子研究所 | 一种增强微穿通型igbt |
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US6965146B1 (en) * | 2004-11-29 | 2005-11-15 | Silicon-Based Technology Corp. | Self-aligned planar DMOS transistor structure and its manufacturing methods |
US7351637B2 (en) * | 2006-04-10 | 2008-04-01 | General Electric Company | Semiconductor transistors having reduced channel widths and methods of fabricating same |
RU2361318C2 (ru) * | 2006-07-18 | 2009-07-10 | Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" | Способ изготовления мощных полевых транзисторов с изолированным затвором |
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- 2008-12-12 ES ES08171450T patent/ES2364870T3/es active Active
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Publication number | Publication date |
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CN101770949A (zh) | 2010-07-07 |
CN101770949B (zh) | 2014-11-19 |
EP2197025A1 (en) | 2010-06-16 |
ES2364870T3 (es) | 2011-09-15 |
RU2009146073A (ru) | 2011-06-20 |
EP2197025B1 (en) | 2011-04-27 |
RU2510099C2 (ru) | 2014-03-20 |
DE602008006579D1 (de) | 2011-06-09 |
US8324062B2 (en) | 2012-12-04 |
ATE507581T1 (de) | 2011-05-15 |
JP2010141339A (ja) | 2010-06-24 |
US20100151650A1 (en) | 2010-06-17 |
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