DE602008006579D1 - Herstellungsverfahren eines Leistungshalbleiterbauelements - Google Patents

Herstellungsverfahren eines Leistungshalbleiterbauelements

Info

Publication number
DE602008006579D1
DE602008006579D1 DE602008006579T DE602008006579T DE602008006579D1 DE 602008006579 D1 DE602008006579 D1 DE 602008006579D1 DE 602008006579 T DE602008006579 T DE 602008006579T DE 602008006579 T DE602008006579 T DE 602008006579T DE 602008006579 D1 DE602008006579 D1 DE 602008006579D1
Authority
DE
Germany
Prior art keywords
dopants
substrate
main side
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008006579T
Other languages
English (en)
Inventor
Arnost Kopta
Munaf Rahimo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Technology AG
Original Assignee
ABB Technology AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Technology AG filed Critical ABB Technology AG
Publication of DE602008006579D1 publication Critical patent/DE602008006579D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
DE602008006579T 2008-12-12 2008-12-12 Herstellungsverfahren eines Leistungshalbleiterbauelements Active DE602008006579D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08171450A EP2197025B1 (de) 2008-12-12 2008-12-12 Herstellungsverfahren eines Leistungshalbleiterbauelements

Publications (1)

Publication Number Publication Date
DE602008006579D1 true DE602008006579D1 (de) 2011-06-09

Family

ID=40352270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008006579T Active DE602008006579D1 (de) 2008-12-12 2008-12-12 Herstellungsverfahren eines Leistungshalbleiterbauelements

Country Status (8)

Country Link
US (1) US8324062B2 (de)
EP (1) EP2197025B1 (de)
JP (1) JP5791870B2 (de)
CN (1) CN101770949B (de)
AT (1) ATE507581T1 (de)
DE (1) DE602008006579D1 (de)
ES (1) ES2364870T3 (de)
RU (1) RU2510099C2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011102014T5 (de) * 2010-06-17 2013-07-11 Abb Technology Ag Leistungshalbleitervorrichtung
CN103839988A (zh) * 2012-11-23 2014-06-04 中国科学院微电子研究所 Empt-ti-igbt器件的结构及其制备方法
CN103839989A (zh) * 2012-11-23 2014-06-04 中国科学院微电子研究所 一种带缓冲层的低压igbt及其制作方法
CN103872115A (zh) * 2012-12-13 2014-06-18 中国科学院微电子研究所 一种增强微穿通型igbt

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
JPS57134855U (de) * 1981-02-17 1982-08-23
US5091336A (en) * 1985-09-09 1992-02-25 Harris Corporation Method of making a high breakdown active device structure with low series resistance
JPH03205832A (ja) * 1990-01-08 1991-09-09 Hitachi Ltd 絶縁ゲート形半導体装置とその製造方法
DE69029942T2 (de) * 1990-10-16 1997-08-28 Sgs Thomson Microelectronics Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
DE69534919T2 (de) * 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe
JPH10178174A (ja) * 1996-10-18 1998-06-30 Hitachi Ltd 半導体装置及びそれを使った電力変換装置
EP0837508A3 (de) 1996-10-18 1999-01-20 Hitachi, Ltd. Halbleiteranordnung und elektrische Leistungswandlungsvorrichtung
US6121089A (en) * 1997-10-17 2000-09-19 Intersil Corporation Methods of forming power semiconductor devices having merged split-well body regions therein
JP2002532885A (ja) * 1998-12-04 2002-10-02 インフィネオン テクノロジース アクチエンゲゼルシャフト 出力半導体回路
US6137139A (en) * 1999-06-03 2000-10-24 Intersil Corporation Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery
US20020179968A1 (en) * 2001-05-30 2002-12-05 Frank Pfirsch Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components
JP3431909B2 (ja) * 2001-08-21 2003-07-28 沖電気工業株式会社 Ｌｄｍｏｓトランジスタの製造方法
JP5134746B2 (ja) * 2001-09-20 2013-01-30 新電元工業株式会社 電界効果トランジスタの製造方法
US6835993B2 (en) * 2002-08-27 2004-12-28 International Rectifier Corporation Bidirectional shallow trench superjunction device with resurf region
JP3914120B2 (ja) * 2002-09-04 2007-05-16 株式会社日立製作所 半導体装置およびそれを用いる電力変換装置
KR100512464B1 (ko) * 2002-12-30 2005-09-07 동부아남반도체 주식회사 이이피롬 소자 제조방법
US6965146B1 (en) * 2004-11-29 2005-11-15 Silicon-Based Technology Corp. Self-aligned planar DMOS transistor structure and its manufacturing methods
US7351637B2 (en) * 2006-04-10 2008-04-01 General Electric Company Semiconductor transistors having reduced channel widths and methods of fabricating same
RU2361318C2 (ru) * 2006-07-18 2009-07-10 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Способ изготовления мощных полевых транзисторов с изолированным затвором

Also Published As

Publication number Publication date
US8324062B2 (en) 2012-12-04
CN101770949B (zh) 2014-11-19
EP2197025B1 (de) 2011-04-27
JP5791870B2 (ja) 2015-10-07
ATE507581T1 (de) 2011-05-15
CN101770949A (zh) 2010-07-07
ES2364870T3 (es) 2011-09-15
RU2510099C2 (ru) 2014-03-20
RU2009146073A (ru) 2011-06-20
JP2010141339A (ja) 2010-06-24
US20100151650A1 (en) 2010-06-17
EP2197025A1 (de) 2010-06-16

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