JP5788785B2 - Ｃｕ配線の形成方法および成膜システム - Google Patents

Ｃｕ配線の形成方法および成膜システム Download PDF

Info

Publication number
JP5788785B2
JP5788785B2 JP2011287693A JP2011287693A JP5788785B2 JP 5788785 B2 JP5788785 B2 JP 5788785B2 JP 2011287693 A JP2011287693 A JP 2011287693A JP 2011287693 A JP2011287693 A JP 2011287693A JP 5788785 B2 JP5788785 B2 JP 5788785B2
Authority
JP
Japan
Prior art keywords
film
forming
substrate
wiring
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011287693A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012216765A5 (enExample
JP2012216765A (ja
Inventor
石坂　忠大
忠大 石坂
五味　淳
淳 五味
多佳良 加藤
多佳良 加藤
横山　敦
敦 横山
佐久間　隆
隆 佐久間
千晃 安室
千晃 安室
宏至 戸島
宏至 戸島
波多野　達夫
達夫 波多野
寧 水澤
寧 水澤
原　正道
正道 原
鈴木　健二
健二 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2011287693A priority Critical patent/JP5788785B2/ja
Priority to US13/359,138 priority patent/US8859422B2/en
Priority to KR1020120008241A priority patent/KR101357531B1/ko
Publication of JP2012216765A publication Critical patent/JP2012216765A/ja
Priority to US14/297,726 priority patent/US20140287163A1/en
Publication of JP2012216765A5 publication Critical patent/JP2012216765A5/ja
Application granted granted Critical
Publication of JP5788785B2 publication Critical patent/JP5788785B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011287693A 2011-01-27 2011-12-28 Ｃｕ配線の形成方法および成膜システム Active JP5788785B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011287693A JP5788785B2 (ja) 2011-01-27 2011-12-28 Ｃｕ配線の形成方法および成膜システム
US13/359,138 US8859422B2 (en) 2011-01-27 2012-01-26 Method of forming copper wiring and method and system for forming copper film
KR1020120008241A KR101357531B1 (ko) 2011-01-27 2012-01-27 Ｃｕ 배선의 형성 방법 및 Ｃｕ막의 성막 방법, 성막 시스템, 및 기억 매체
US14/297,726 US20140287163A1 (en) 2011-01-27 2014-06-06 Method of forming copper wiring and method and system for forming copper film

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011015664 2011-01-27
JP2011015664 2011-01-27
JP2011077499 2011-03-31
JP2011077499 2011-03-31
JP2011287693A JP5788785B2 (ja) 2011-01-27 2011-12-28 Ｃｕ配線の形成方法および成膜システム

Publications (3)

Publication Number Publication Date
JP2012216765A JP2012216765A (ja) 2012-11-08
JP2012216765A5 JP2012216765A5 (enExample) 2014-08-21
JP5788785B2 true JP5788785B2 (ja) 2015-10-07

Family

ID=47269237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011287693A Active JP5788785B2 (ja) 2011-01-27 2011-12-28 Ｃｕ配線の形成方法および成膜システム

Country Status (1)

Country Link
JP (1) JP5788785B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6013901B2 (ja) * 2012-12-20 2016-10-25 東京エレクトロン株式会社 Ｃｕ配線の形成方法
JP6139298B2 (ja) * 2013-06-28 2017-05-31 東京エレクトロン株式会社 Ｃｕ配線の形成方法
JP6268036B2 (ja) * 2014-05-16 2018-01-24 東京エレクトロン株式会社 Ｃｕ配線の製造方法
JP6385856B2 (ja) * 2015-02-26 2018-09-05 東京エレクトロン株式会社 Ｃｕ配線の形成方法および半導体装置の製造方法
JP2021136269A (ja) 2020-02-25 2021-09-13 キオクシア株式会社 半導体装置
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2914644B2 (ja) * 1993-09-22 1999-07-05 アネルバ株式会社 集積回路の配線方法及び集積回路における穴又は溝の埋め込み配線方法並びにマルチチャンバー基板処理装置
JP3337876B2 (ja) * 1994-06-21 2002-10-28 株式会社東芝 半導体装置の製造方法
JP3501265B2 (ja) * 1997-10-30 2004-03-02 富士通株式会社 半導体装置の製造方法
US6140228A (en) * 1997-11-13 2000-10-31 Cypress Semiconductor Corporation Low temperature metallization process
JP3244058B2 (ja) * 1998-07-28 2002-01-07 日本電気株式会社 半導体装置の製造方法
US6720262B2 (en) * 1999-12-15 2004-04-13 Genitech, Inc. Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst
US6884329B2 (en) * 2003-01-10 2005-04-26 Applied Materials, Inc. Diffusion enhanced ion plating for copper fill
JP4455214B2 (ja) * 2004-08-05 2010-04-21 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
US20080190760A1 (en) * 2007-02-08 2008-08-14 Applied Materials, Inc. Resputtered copper seed layer
JP2009105289A (ja) * 2007-10-24 2009-05-14 Tokyo Electron Ltd Ｃｕ配線の形成方法

Also Published As

Publication number Publication date
JP2012216765A (ja) 2012-11-08

Similar Documents

Publication Publication Date Title
JP5767570B2 (ja) Ｃｕ配線の形成方法およびＣｕ膜の成膜方法、ならびに成膜システム
JP6257217B2 (ja) Ｃｕ配線構造の形成方法
JP6139298B2 (ja) Ｃｕ配線の形成方法
US9425093B2 (en) Copper wiring forming method, film forming system, and storage medium
US8399353B2 (en) Methods of forming copper wiring and copper film, and film forming system
WO2012133400A1 (ja) Ｃｕ配線の形成方法
JP5969306B2 (ja) Ｃｕ配線の形成方法
TWI710654B (zh) Ｃｕ配線之製造方法
KR102008475B1 (ko) Cu 배선의 형성 방법 및 반도체 장치의 제조 방법
KR20140076514A (ko) Cu 배선의 형성 방법 및 기억 매체
JP5788785B2 (ja) Ｃｕ配線の形成方法および成膜システム
US20140287163A1 (en) Method of forming copper wiring and method and system for forming copper film
KR101741896B1 (ko) Cu 배선의 제조 방법 및 기억 매체
JP2017050304A (ja) 半導体装置の製造方法
WO2014010333A1 (ja) Ｃｕ配線の形成方法およびコンピュータ読み取り可能な記憶媒体
KR101357531B1 (ko) Ｃｕ 배선의 형성 방법 및 Ｃｕ막의 성막 방법, 성막 시스템, 및 기억 매체

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140704

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140704

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150310

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150625

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150714

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150730

R150 Certificate of patent or registration of utility model

Ref document number: 5788785

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250