JP5782224B2 - 組成物およびフォトリソグラフィー方法 - Google Patents

組成物およびフォトリソグラフィー方法 Download PDF

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Publication number
JP5782224B2
JP5782224B2 JP2009263091A JP2009263091A JP5782224B2 JP 5782224 B2 JP5782224 B2 JP 5782224B2 JP 2009263091 A JP2009263091 A JP 2009263091A JP 2009263091 A JP2009263091 A JP 2009263091A JP 5782224 B2 JP5782224 B2 JP 5782224B2
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Japan
Prior art keywords
photoresist
resins
groups
preferred
materials
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Japanese (ja)
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JP2010152343A5 (OSRAM
JP2010152343A (ja
Inventor
ダヤン・ワン
チュンイ・ウー
チャン−バイ・スー
ジョージ・ジー・バークレー
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2009263091A 2008-11-19 2009-11-18 組成物およびフォトリソグラフィー方法 Active JP5782224B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11628808P 2008-11-19 2008-11-19
US61/116,288 2008-11-19

Related Child Applications (1)

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JP2015094831A Division JP6232394B2 (ja) 2008-11-19 2015-05-07 組成物およびフォトリソグラフィー方法

Publications (3)

Publication Number Publication Date
JP2010152343A JP2010152343A (ja) 2010-07-08
JP2010152343A5 JP2010152343A5 (OSRAM) 2015-06-25
JP5782224B2 true JP5782224B2 (ja) 2015-09-24

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Family Applications (3)

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JP2009263091A Active JP5782224B2 (ja) 2008-11-19 2009-11-18 組成物およびフォトリソグラフィー方法
JP2015094831A Active JP6232394B2 (ja) 2008-11-19 2015-05-07 組成物およびフォトリソグラフィー方法
JP2017078107A Expired - Fee Related JP6554133B2 (ja) 2008-11-19 2017-04-11 組成物およびフォトリソグラフィー方法

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JP2017078107A Expired - Fee Related JP6554133B2 (ja) 2008-11-19 2017-04-11 組成物およびフォトリソグラフィー方法

Country Status (6)

Country Link
US (1) US9507260B2 (OSRAM)
EP (1) EP2189845B1 (OSRAM)
JP (3) JP5782224B2 (OSRAM)
KR (1) KR101729998B1 (OSRAM)
CN (1) CN101943857B (OSRAM)
TW (1) TWI483083B (OSRAM)

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JP5514687B2 (ja) 2010-09-29 2014-06-04 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、感活性光線性または感放射線性膜およびパターン形成方法
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JP5879229B2 (ja) * 2012-08-20 2016-03-08 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
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US10078261B2 (en) 2013-09-06 2018-09-18 Rohm And Haas Electronic Materials Llc Self-assembled structures, method of manufacture thereof and articles comprising the same
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JP2023550603A (ja) * 2020-11-09 2023-12-04 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ プラズマ活性化液

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US9507260B2 (en) 2016-11-29
JP2015163981A (ja) 2015-09-10
JP2017134418A (ja) 2017-08-03
US20100304290A1 (en) 2010-12-02
KR20100056418A (ko) 2010-05-27
TW201030475A (en) 2010-08-16
JP6232394B2 (ja) 2017-11-15
EP2189845B1 (en) 2017-08-02
CN101943857A (zh) 2011-01-12
JP6554133B2 (ja) 2019-07-31
KR101729998B1 (ko) 2017-04-25
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