JP5775617B2 - 栓がされ密封されたチャンバを有するウエハー対を製造する方法 - Google Patents
栓がされ密封されたチャンバを有するウエハー対を製造する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 20
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
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- 229910000679 solder Inorganic materials 0.000 claims description 14
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- 238000000151 deposition Methods 0.000 claims description 2
- 238000007373 indentation Methods 0.000 claims 3
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- 238000010586 diagram Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
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- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
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- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
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- 238000012545 processing Methods 0.000 description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
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- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000009461 vacuum packaging Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
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- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/56—Compression moulding under special conditions, e.g. vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/56—Compression moulding under special conditions, e.g. vacuum
- B29C2043/561—Compression moulding under special conditions, e.g. vacuum under vacuum conditions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
Description
本発明は止栓可能な穴を有する2枚のウエハーを密封しその間に空洞部を形成し、空洞部から止栓可能な穴を通してガスを排出する構成を得る。空洞部からガスを排出した後この穴は蒸着した金属で止栓される(塞がれる)。この結果一体の真空包装(IVP)が得られる。この方法では同時に真空密封を行う要がなく2枚のウエハーを密封可能である。最終に真空密封は金属の厚い層を蒸着あるいはスパッタリングして小さなガス排出穴を塞ぐことにより高真空下で実行可能である。この方法によれば、最終の真空密封の前にウエハー間の密封部及び内面を完全に焼き付け可能である。この方法は2機能を分離し、焼き付けを半田処理法に限定されない。密封及び焼き付けに対し独立的に制御され、ボンド出来高が最大にされ残留圧力が最小にされる。またこの方法によれば、各真空空洞部に直接接近可能であるので、ウエハーの周部から内側へポンプする必要がない。この方法が実施されその結果、空洞部内の圧力センサにより測定して残留圧力の真空レベルが10ミリトルより小さかった。この密封により基板形態が効果的にカバーされる。0.25ミクロンの形態に対する密封が実証された。必要な処理温度は300℃より低い。このチップは周知のチップ処理装置で処理可能である。この処理により90%を超える作業が行われる。この真空密封されたチップのコストは周知の真空密封チップのコストより低く80〜90%である。この方法によれば、100ミリトルより低い圧力に対し10年(最高150℃の外気温度でのテストデータにより示される)の高温寿命を有する密封された装置が得られる。各空洞部は真空に代えてガスを使用可能である。各空洞部、チャンバ、あるいは容積部には熱電検出器、装置、ボロメータあるいはエミッターのような検出器を内蔵可能である。
図1a、図1b及び図2は真空排出ポート11及び蒸着されたプラグの最終の真空密封部12を有する装置10を示す。蒸着層12によりプラグ11が密封されチャンバ16が気密に密封される。ウエハー13、14はシリコンのような同一の材料で作られ、従って同一の熱膨張率を有している。ウエハー13、14は半田密封リング15で共に接着される。ウエハー13は検出器ウエハーであり、一方ウエハー14はトップキャップウエハーである。チヤンバ16はウエハー13の表面の検出器からなるアレイ17を含み、トップキャップウエハー14の反射防止被覆されたシリコン窓を通して入射される放射線を検出するチャンバである。
ストロームのNi、及び5000オングストロームのAuが蒸着され、パターン化処理され、リフトオフ処理されて図4jのパッド・半田フレーム金属33が形成される。第1の金属26あるいは第2の金属27内の活性導出部40は図4jの密封リング金属33の下部を延びている。図4kではプラズマエッチング処理されたガス排出ポートバイア穴11はウエハー13の背部の層23b、23a上でパターンイング処理され掘り形成される。図41ではウエハー13の背部がウエハー13の90%KOHエッチングされてポート11が形成される。図4mに示すように、ポート11が完成されると、エッチングバイア穴32がウエハー13の正面へ向かって貫通される。
13 検出器ウエハー
14 トップキャップウエハー
33 密封リング金属
39 接着金属
36a、36b、37a、37b 窒化物/酸化物マスク層
39 接着金属
Claims (6)
- 第1のシリコンウエハー(13)の第1の側上に熱層(24)を成長させる工程と、
第1のシリコンウエハー(13)の第1の側上のシリコンウエハー(13)及び所定の層から、および第1のシリコンウエハー(13)の第2の側から材料をパターニング処理して除去し、第1のシリコンウエハー(13)及び第1のシリコンウエハー(13)上の所定の層を貫通して複数の排気ポート(11)を形成する工程と、
第2のシリコンウエハー(14)の第1の側からマスキング処理し材料を除去し、第2のシリコンウエハー(14)の第1の側に複数のくぼみ部(16)を形成する工程と、
前記複数のくぼみ部(16)のそれぞれの周囲に第2のシリコンウエハー(14)の第1の側上に半田のリング(18)を形成する工程と、
前記第2のシリコンウエハー(14)の第1の側の隣に第1のシリコンウエハー(13)の第1の側を配置する工程と、
前記第1のシリコンウエハー(13)と前記第2のシリコンウエハー(14)とを第1の温度に加熱して、前記第1のシリコンウエハー(13)と第2のシリコンウエハー(14)とを接着されたシリコンウエハーの対(13、14)にする工程と、
前記接着されたシリコンウエハーの対(13、14)を冷却させる工程と、
前記接着されたシリコンウエハーの対(13、14)を第2の温度で焼き付ける工程とを有し、
各半田のリング(18)は第1のシリコンウエハー(13)の第1の側上で層の少なくとも一と接触させ、
複数のくぼみ部(16)のそれぞれはチャンバ内にあり、
各半田のリング(18)は複数の排気ポート(11)の少なくとも一を囲む、
栓がれ密封されたチャンバを有するシリコンウエハーの対を製造する方法。 - 排気ポート(11)を介し各チャンバ(16)内を真空にする真空環境に前記接着されたシリコンウエハーの対(13、14)を配置する工程と、
第1のシリコンウエハー(13)の第2の側上に材料層(12)を蒸着し、第1のシリコンウエハー(13)の第2の側から複数の排気ポートを閉鎖して、各チャンバ(16)を環境から密封する工程とを有する請求項1記載方法。 - 真空が排気ポートを介し各チャンバ(16)で生じる真空の環境内に、組をなすウエハー(13、14)を配置する工程と、
第1のシリコンウエハー(13)の第2の側上に材料層(12)を蒸着し、第1のシリコンウエハー(13)の第2の側から複数の排気ポートを閉鎖して、各チャンバ(16)を環境から密封する工程とを有する、請求項1記載の方法。 - 第1のシリコンウエハー(13)の第2の側上に材料層(12)を蒸着し、前記第1のシリコンウエハー(13)の第2の側から複数の排気ポート(11)を閉鎖する前に、前記接着されたシリコンウエハーの対(13、14)を焼き付ける工程を有する、請求項2の方法。
- 接着されたシリコンウエハーの対(13、14)が複数のチップに切断され、各チップが一あるいは複数の密封されたチャンバ(16)を有する請求項4記載方法。
- 一以上のチャンバ(16)には一以上の装置が内蔵される請求項5記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/052,645 | 1998-03-31 | ||
US09/052,645 US6036872A (en) | 1998-03-31 | 1998-03-31 | Method for making a wafer-pair having sealed chambers |
Related Parent Applications (1)
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JP2009254107A Division JP2010080967A (ja) | 1998-03-31 | 2009-11-05 | 密封されたチャンバを有するウエハ対を製造する方法 |
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JP2014179608A JP2014179608A (ja) | 2014-09-25 |
JP5775617B2 true JP5775617B2 (ja) | 2015-09-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2000541738A Expired - Lifetime JP4434488B2 (ja) | 1998-03-31 | 1999-03-30 | 密封されたチャンバを有するウエハー対を製造する方法 |
JP2009254107A Withdrawn JP2010080967A (ja) | 1998-03-31 | 2009-11-05 | 密封されたチャンバを有するウエハ対を製造する方法 |
JP2014047559A Expired - Lifetime JP5775617B2 (ja) | 1998-03-31 | 2014-03-11 | 栓がされ密封されたチャンバを有するウエハー対を製造する方法 |
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JP2000541738A Expired - Lifetime JP4434488B2 (ja) | 1998-03-31 | 1999-03-30 | 密封されたチャンバを有するウエハー対を製造する方法 |
JP2009254107A Withdrawn JP2010080967A (ja) | 1998-03-31 | 2009-11-05 | 密封されたチャンバを有するウエハ対を製造する方法 |
Country Status (6)
Country | Link |
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US (2) | US6036872A (ja) |
EP (1) | EP1070353B1 (ja) |
JP (3) | JP4434488B2 (ja) |
CA (1) | CA2326677C (ja) |
DE (1) | DE69929042T2 (ja) |
WO (1) | WO1999050913A1 (ja) |
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- 1999-03-30 CA CA002326677A patent/CA2326677C/en not_active Expired - Lifetime
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- 1999-03-30 JP JP2000541738A patent/JP4434488B2/ja not_active Expired - Lifetime
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JP4434488B2 (ja) | 2010-03-17 |
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JP2002510865A (ja) | 2002-04-09 |
EP1070353A1 (en) | 2001-01-24 |
USRE39143E1 (en) | 2006-06-27 |
WO1999050913A1 (en) | 1999-10-07 |
DE69929042T2 (de) | 2006-08-03 |
CA2326677C (en) | 2008-06-10 |
JP2014179608A (ja) | 2014-09-25 |
JP2010080967A (ja) | 2010-04-08 |
DE69929042D1 (de) | 2006-01-26 |
CA2326677A1 (en) | 1999-10-07 |
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