JP5774830B2 - 組成物 - Google Patents

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Publication number
JP5774830B2
JP5774830B2 JP2010222519A JP2010222519A JP5774830B2 JP 5774830 B2 JP5774830 B2 JP 5774830B2 JP 2010222519 A JP2010222519 A JP 2010222519A JP 2010222519 A JP2010222519 A JP 2010222519A JP 5774830 B2 JP5774830 B2 JP 5774830B2
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JP
Japan
Prior art keywords
cyclic
branched
hydrocarbon
monounsaturated
saturated
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Expired - Lifetime
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JP2010222519A
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English (en)
Japanese (ja)
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JP2011014925A5 (enrdf_load_stackoverflow
JP2011014925A (ja
Inventor
レイモンド　ニコラス　バーティス
ニコラス バーティス レイモンド
マーク　レオナルド　オニール
レオナルド オニール マーク
ジーン　ルイーズ　ビンセント
ルイーズ ビンセント ジーン
アーロン　スコット　ルーカス
スコット ルーカス アーロン
マンチャオ　シャオ
シャオ マンチャオ
ジョン　アンソニー　トーマス　ノーマン
アンソニー トーマス ノーマン ジョン
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Air Products and Chemicals Inc
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Air Products and Chemicals Inc
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Filing date
Publication date
Priority claimed from US10/150,798 external-priority patent/US6846515B2/en
Priority claimed from US10/409,468 external-priority patent/US7384471B2/en
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of JP2011014925A publication Critical patent/JP2011014925A/ja
Publication of JP2011014925A5 publication Critical patent/JP2011014925A5/ja
Application granted granted Critical
Publication of JP5774830B2 publication Critical patent/JP5774830B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/045—Silicon oxycarbide, oxynitride or oxycarbonitride glasses
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
  • Catalysts (AREA)
JP2010222519A 2002-04-17 2010-09-30 組成物 Expired - Lifetime JP5774830B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US37310402P 2002-04-17 2002-04-17
US60/373104 2002-04-17
US10/150798 2002-05-17
US10/150,798 US6846515B2 (en) 2002-04-17 2002-05-17 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US10/409468 2003-04-07
US10/409,468 US7384471B2 (en) 2002-04-17 2003-04-07 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007024479A Division JP4897505B2 (ja) 2002-04-17 2007-02-02 低誘電率の多孔質有機シリカガラス膜を得るための化学蒸着方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012085485A Division JP5711176B2 (ja) 2002-04-17 2012-04-04 組成物
JP2014096336A Division JP2014150287A (ja) 2002-04-17 2014-05-07 ポロゲン、ポロゲン化された前駆体、及び低誘電率を有する多孔質有機シリカガラス膜を得るためのそれらの使用

Publications (3)

Publication Number Publication Date
JP2011014925A JP2011014925A (ja) 2011-01-20
JP2011014925A5 JP2011014925A5 (enrdf_load_stackoverflow) 2012-06-07
JP5774830B2 true JP5774830B2 (ja) 2015-09-09

Family

ID=46150309

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010222519A Expired - Lifetime JP5774830B2 (ja) 2002-04-17 2010-09-30 組成物
JP2012085485A Expired - Lifetime JP5711176B2 (ja) 2002-04-17 2012-04-04 組成物
JP2014096336A Pending JP2014150287A (ja) 2002-04-17 2014-05-07 ポロゲン、ポロゲン化された前駆体、及び低誘電率を有する多孔質有機シリカガラス膜を得るためのそれらの使用

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012085485A Expired - Lifetime JP5711176B2 (ja) 2002-04-17 2012-04-04 組成物
JP2014096336A Pending JP2014150287A (ja) 2002-04-17 2014-05-07 ポロゲン、ポロゲン化された前駆体、及び低誘電率を有する多孔質有機シリカガラス膜を得るためのそれらの使用

Country Status (3)

Country Link
JP (3) JP5774830B2 (enrdf_load_stackoverflow)
KR (1) KR100494194B1 (enrdf_load_stackoverflow)
AT (1) ATE499458T1 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US20080268177A1 (en) * 2002-05-17 2008-10-30 Air Products And Chemicals, Inc. Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
US9061317B2 (en) 2002-04-17 2015-06-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US8951342B2 (en) 2002-04-17 2015-02-10 Air Products And Chemicals, Inc. Methods for using porogens for low k porous organosilica glass films
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
US7498273B2 (en) * 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US7410916B2 (en) * 2006-11-21 2008-08-12 Applied Materials, Inc. Method of improving initiation layer for low-k dielectric film by digital liquid flow meter
WO2011099768A2 (ko) * 2010-02-09 2011-08-18 서강대학교산학협력단 고온 오존처리를 포함하는 나노기공 초저유전 박막의 제조 방법 및 이에 의해 제조된 나노기공 초저유전 박막
KR102316276B1 (ko) 2020-04-20 2021-10-25 한국과학기술연구원 다단기공구조를 갖는 킬레이트 복합체 및 그 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998050945A2 (en) * 1997-05-07 1998-11-12 Skamser Daniel J Low density film for low dielectric constant applications
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
JP3756666B2 (ja) * 1998-05-08 2006-03-15 松下電器産業株式会社 多孔質膜の形成方法及びその形成装置
JP3888794B2 (ja) * 1999-01-27 2007-03-07 松下電器産業株式会社 多孔質膜の形成方法、配線構造体及びその形成方法
JP3633821B2 (ja) * 1999-03-18 2005-03-30 独立行政法人科学技術振興機構 気相からの低誘電率多孔質シリカ膜の形成方法
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
JP2001274153A (ja) * 2000-03-24 2001-10-05 Hitachi Kokusai Electric Inc 絶縁膜の製造方法
JP3882914B2 (ja) * 2000-08-02 2007-02-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 多相低誘電率材料およびその堆積方法
KR100586133B1 (ko) * 2000-10-25 2006-06-07 인터내셔널 비지네스 머신즈 코포레이션 반도체 장치에서 레벨내 또는 레벨간 유전체로서의 극저유전상수 물질, 이의 제조방법 및 상기 물질을 함유하는전자 장치
KR20030002993A (ko) * 2001-06-29 2003-01-09 학교법인 포항공과대학교 저유전체 박막의 제조방법
US7384471B2 (en) * 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants

Also Published As

Publication number Publication date
KR100494194B1 (ko) 2005-06-10
JP2014150287A (ja) 2014-08-21
JP2012144738A (ja) 2012-08-02
ATE499458T1 (de) 2011-03-15
KR20030082479A (ko) 2003-10-22
JP2011014925A (ja) 2011-01-20
JP5711176B2 (ja) 2015-04-30

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