JP5768435B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5768435B2
JP5768435B2 JP2011069193A JP2011069193A JP5768435B2 JP 5768435 B2 JP5768435 B2 JP 5768435B2 JP 2011069193 A JP2011069193 A JP 2011069193A JP 2011069193 A JP2011069193 A JP 2011069193A JP 5768435 B2 JP5768435 B2 JP 5768435B2
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JP
Japan
Prior art keywords
light emitting
light
emitting device
mounting region
electrode
Prior art date
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Active
Application number
JP2011069193A
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English (en)
Japanese (ja)
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JP2011238902A (ja
JP2011238902A5 (enExample
Inventor
玄明 笹野
玄明 笹野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2011069193A priority Critical patent/JP5768435B2/ja
Priority to TW100113288A priority patent/TWI565099B/zh
Priority to CN201110097631.6A priority patent/CN102237483B/zh
Priority to US13/087,950 priority patent/US9245873B2/en
Publication of JP2011238902A publication Critical patent/JP2011238902A/ja
Publication of JP2011238902A5 publication Critical patent/JP2011238902A5/ja
Application granted granted Critical
Publication of JP5768435B2 publication Critical patent/JP5768435B2/ja
Priority to US14/966,160 priority patent/US9786637B2/en
Priority to US15/699,214 priority patent/US10707188B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2011069193A 2010-04-16 2011-03-28 発光装置 Active JP5768435B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011069193A JP5768435B2 (ja) 2010-04-16 2011-03-28 発光装置
TW100113288A TWI565099B (zh) 2010-04-16 2011-04-15 發光裝置
CN201110097631.6A CN102237483B (zh) 2010-04-16 2011-04-15 发光装置
US13/087,950 US9245873B2 (en) 2010-04-16 2011-04-15 Light emitting device
US14/966,160 US9786637B2 (en) 2010-04-16 2015-12-11 Light emitting device
US15/699,214 US10707188B2 (en) 2010-04-16 2017-09-08 Light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010094718 2010-04-16
JP2010094718 2010-04-16
JP2011069193A JP5768435B2 (ja) 2010-04-16 2011-03-28 発光装置

Publications (3)

Publication Number Publication Date
JP2011238902A JP2011238902A (ja) 2011-11-24
JP2011238902A5 JP2011238902A5 (enExample) 2014-05-08
JP5768435B2 true JP5768435B2 (ja) 2015-08-26

Family

ID=44787584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011069193A Active JP5768435B2 (ja) 2010-04-16 2011-03-28 発光装置

Country Status (4)

Country Link
US (3) US9245873B2 (enExample)
JP (1) JP5768435B2 (enExample)
CN (1) CN102237483B (enExample)
TW (1) TWI565099B (enExample)

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USD677229S1 (en) * 2009-11-30 2013-03-05 Nichia Corporation Light emitting diode
USD677228S1 (en) * 2010-04-09 2013-03-05 Nichia Corporation Light emitting diode
USD658601S1 (en) * 2010-06-15 2012-05-01 Toshiba Lighting & Technology Corporation Light emitting diode module
USD658602S1 (en) * 2010-06-15 2012-05-01 Toshiba Lighting & Technology Corporation Light emitting diode module
USD658605S1 (en) * 2010-06-15 2012-05-01 Toshiba Lighting & Technology Corporation Light emitting diode module
USD658600S1 (en) * 2010-06-15 2012-05-01 Toshiba Lighting & Technology Corporation Light emitting diode module
JP5612991B2 (ja) * 2010-09-30 2014-10-22 シャープ株式会社 発光装置及びこれを備えた照明装置
EP2448028B1 (en) * 2010-10-29 2017-05-31 Nichia Corporation Light emitting apparatus and production method thereof
DE102011018921B4 (de) * 2011-04-28 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Träger, optoelektronisches Bauelement mit Träger und Verfahren zur Herstellung dieser
WO2013054483A1 (ja) * 2011-10-11 2013-04-18 パナソニック株式会社 発光装置およびこれを用いた照明装置
US10043960B2 (en) * 2011-11-15 2018-08-07 Cree, Inc. Light emitting diode (LED) packages and related methods
JP2013118292A (ja) 2011-12-02 2013-06-13 Citizen Electronics Co Ltd Ｌｅｄ発光装置
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KR20140123976A (ko) * 2012-02-10 2014-10-23 크리,인코포레이티드 리드 상에 전극 마크를 갖는 발광장치, 패키지, 및 관련 방법
JPWO2013150882A1 (ja) * 2012-04-06 2015-12-17 シチズン電子株式会社 Ｌｅｄ発光装置
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WO2014024627A1 (ja) * 2012-08-06 2014-02-13 シャープ株式会社 発光装置および発光装置の製造方法
US8872294B2 (en) * 2012-08-21 2014-10-28 Micron Technology, Inc. Method and apparatus for reducing signal loss in a photo detector
US9171826B2 (en) 2012-09-04 2015-10-27 Micron Technology, Inc. High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods
CN204577466U (zh) * 2012-09-26 2015-08-19 松下知识产权经营株式会社 发光模块
TWI482311B (zh) 2012-10-19 2015-04-21 Univ Nat Sun Yat Sen 三族氮化物量子井結構及其製造方法
US20140167083A1 (en) * 2012-12-19 2014-06-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Led package with integrated reflective shield on zener diode
JP2014187081A (ja) * 2013-03-22 2014-10-02 Nichia Chem Ind Ltd 発光装置
JP6476567B2 (ja) 2013-03-29 2019-03-06 日亜化学工業株式会社 発光装置
CN104425694A (zh) * 2013-08-29 2015-03-18 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
JP6213428B2 (ja) 2014-03-12 2017-10-18 豊田合成株式会社 発光装置及びその製造方法
KR102145919B1 (ko) * 2014-05-30 2020-08-19 엘지이노텍 주식회사 발광 소자 패키지
CN109904147B (zh) * 2014-09-05 2023-04-11 光宝光电(常州)有限公司 基板及包含所述基板的发光装置
JP6583764B2 (ja) * 2014-09-12 2019-10-02 パナソニックＩｐマネジメント株式会社 発光装置、及び照明装置
USD770987S1 (en) 2014-10-17 2016-11-08 Panasonic Intellectual Property Management Co., Ltd. Light emitting diode
TW201631808A (zh) * 2015-02-25 2016-09-01 隆達電子股份有限公司 發光二極體晶片封裝體
JP6646969B2 (ja) * 2015-08-03 2020-02-14 シチズン電子株式会社 発光装置
JP6610866B2 (ja) 2015-08-31 2019-11-27 パナソニックＩｐマネジメント株式会社 発光装置、及び照明装置
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CN106206669B (zh) * 2016-08-31 2018-12-07 昆山维信诺科技有限公司 用于异形oled产品的布线方法以及异形oled产品
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DE102017106407B4 (de) 2017-03-24 2025-04-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen
CN107248510A (zh) * 2017-06-14 2017-10-13 厦门煜明光电有限公司 一种带有齐纳二极管保护的cob封装结构
KR102342853B1 (ko) 2017-07-21 2021-12-23 삼성전자주식회사 수직형 메모리 소자를 구비한 집적회로 소자
US11121298B2 (en) 2018-05-25 2021-09-14 Creeled, Inc. Light-emitting diode packages with individually controllable light-emitting diode chips
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Also Published As

Publication number Publication date
JP2011238902A (ja) 2011-11-24
US10707188B2 (en) 2020-07-07
CN102237483A (zh) 2011-11-09
US20160111402A1 (en) 2016-04-21
CN102237483B (zh) 2016-04-27
US9245873B2 (en) 2016-01-26
US20110254022A1 (en) 2011-10-20
TW201205886A (en) 2012-02-01
US20180012875A1 (en) 2018-01-11
US9786637B2 (en) 2017-10-10
TWI565099B (zh) 2017-01-01

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