JP5766122B2 - 発光手段の製造方法 - Google Patents
発光手段の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 113
- 230000005693 optoelectronics Effects 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 40
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 230000001846 repelling effect Effects 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- -1 Money Chemical compound 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 105
- 239000000463 material Substances 0.000 description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 18
- 229910052737 gold Inorganic materials 0.000 description 18
- 239000010931 gold Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
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- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2081—Compound repelling a metal, e.g. solder
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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Description
Claims (11)
- 発光手段の製造方法において、
平坦なチップ実装領域(20,51)を含み、かつ、ヒートシンクとして使用される支持体(10a,4,50)を準備するステップと、
前記平坦なチップ実装領域(51,20)を構造化し、第1の部分領域(17,24,21a,43)と少なくとも1つの第2の部分領域(12a,22a,22b,23,44)とを形成し、前記構造化後に前記第1の部分領域(17,24,21a,43)にはんだを弾く特性を備えさせるステップと、
前記平坦なチップ実装領域(51,20)にはんだを塗布し、該はんだにより前記少なくとも1つの第2の部分領域(12a,22a,22b,23,44)を湿らせるステップと、
前記少なくとも1つの第2の部分領域(12a,22a,22b,23,44)内の前記はんだの上に少なくとも1つのオプトエレクトロニクス素子(100,60)を載置するステップと、
切欠部と、少なくとも1つの金属性の導体路(55)と、少なくとも1つのコンタクト領域(54)とを備えた薄膜回路基板(50a)を形成するステップと、
前記薄膜回路基板(50a)を前記支持体に載置する前または載置した後に、前記少なくとも1つのオプトエレクトロニクス素子(60)を載置し、前記切欠部が前記チップ実装領域の上方に位置するように前記薄膜回路基板(50a)を前記支持体に載置するステップと、
前記薄膜回路基板(50a)の載置後に、前記オプトエレクトロニクス素子(100,60)への電気的なエネルギの供給に適している電気的なコンタクトを形成するステップとを有し、
前記電気的なコンタクトを形成するステップは、前記少なくとも1つのオプトエレクトロニクス素子(60)と、前記薄膜回路基板(50a)の前記少なくとも1つのコンタクト領域(54)とを接続させるステップを含む、
ことを特徴とする、発光手段の製造方法。 - 前記第2の部分領域(12a,22a,22b,23,44)内の前記平坦なチップ実装領域(51,20)は、前記はんだによって少なくとも部分的に湿らされる、少なくとも1つの金属性の部分層(12,42)を含む、請求項1記載の方法。
- 前記平坦なチップ実装領域を構造化するステップは、
前記平坦なチップ実装領域(51,20)上に、はんだを弾く特性を有するはんだストップ層(43)を被着させるステップと、
前記はんだストップ層を構造化し、前記第1の部分領域および前記第2の部分領域(44)を形成するステップと、
前記第2の部分領域(44)における前記はんだストップ層を除去するステップとを含む、請求項1または2記載の方法。 - 前記平坦なチップ実装領域を構造化するステップは、
前記平坦なチップ実装領域の前記第1の部分領域上に、はんだを弾く特性を有するはんだストップ層を被着させるステップと、
前記第2の部分領域の一部を必要に応じて露出および/または加工し、はんだによって湿らされる表面を前記第2の部分領域に形成するステップとを含む、請求項1または2記載の方法。 - ヒートシンクとして使用される支持体(50)を準備するステップは、少なくとも2つの部分層から成る積層体(11,12)を含む、チップ実装領域を備えた支持体を準備するステップを含み、前記部分層のうちの少なくとも1つの部分層は、
ニッケル、
銅、
アルミニウム、
銀、
金、
チタン、
タングステン
のうちの少なくとも1つを含有する、請求項1から4までのいずれか1項記載の方法。 - 前記第1の部分領域は、少なくとも前記チップ実装領域の縁に沿って延在している、請求項1から5までのいずれか1項記載の方法。
- さらに、
前記チップ実装領域の外側において、前記支持体に誘電層(13,50a)を設けるステップと、
前記誘電層に金属性のコンタクト部(14,55)を形成するステップと、
前記支持体に少なくとも1つの構成素子(59a)を載置し、前記コンタクト部と電気的に接触接続させるステップとを有する、請求項1から6までのいずれか1項記載の方法。 - 隣接する少なくとも2つの第2の部分領域を第1の部分領域によって隔てる、請求項1から7までのいずれか1項記載の方法。
- 電気的なコンタクトを形成するステップは、
前記チップ実装領域の外側に設けられているコンタクトパッドにコンタクトワイヤをボンディングするステップと、
前記オプトエレクトロニクス素子におけるコンタクトパッドにコンタクトワイヤをボンディングし、該コンタクトパッドを、光の放射に適した積層体の部分層に電気的に接触接続させるステップとを含む、請求項1から8までのいずれか1項記載の方法。 - 前記オプトエレクトロニクス素子は、前記はんだと対向する側に反射層を有する、請求項1から9までのいずれか1項記載の方法。
- 前記オプトエレクトロニクス素子は、前記はんだ側とは反対の側にコンタクトパッドを有する、請求項1から10までのいずれか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008063325A DE102008063325A1 (de) | 2008-12-30 | 2008-12-30 | Verfahren zur Fertigung von Leuchtmitteln |
DE102008063325.9 | 2008-12-30 | ||
PCT/DE2009/001693 WO2010075831A1 (de) | 2008-12-30 | 2009-11-27 | Verfahren zur fertigung von leuchtmitteln |
Publications (3)
Publication Number | Publication Date |
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JP2012514340A JP2012514340A (ja) | 2012-06-21 |
JP2012514340A5 JP2012514340A5 (ja) | 2012-12-20 |
JP5766122B2 true JP5766122B2 (ja) | 2015-08-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011543974A Active JP5766122B2 (ja) | 2008-12-30 | 2009-11-27 | 発光手段の製造方法 |
Country Status (7)
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US (1) | US8809082B2 (ja) |
EP (2) | EP2544234A1 (ja) |
JP (1) | JP5766122B2 (ja) |
KR (1) | KR101681343B1 (ja) |
CN (1) | CN102272925B (ja) |
DE (1) | DE102008063325A1 (ja) |
WO (1) | WO2010075831A1 (ja) |
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DE102008063325A1 (de) | 2008-12-30 | 2010-07-01 | Osram Opto Semiconductors Gmbh | Verfahren zur Fertigung von Leuchtmitteln |
WO2013065230A1 (ja) * | 2011-11-04 | 2013-05-10 | パナソニック株式会社 | 半導体装置およびその製造方法 |
DE102012215705B4 (de) * | 2012-09-05 | 2021-09-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Gehäuse für ein optisches bauelement, baugruppe, verfahren zum herstellen eines gehäuses und verfahren zum herstellen einer baugruppe |
ITTR20120012A1 (it) * | 2012-11-20 | 2013-02-19 | Tecnologie E Servizi Innovativi T S I S R L | Mpcb-led-sink20 - circuito stampato su base metallica con trasferimento diretto del calore dal pad termico dei led di potenza allo strato metallico della mpcb con capacita' di abbassare la temperatura della giunzione del led di ulteriori 20 °c rispet |
DE102013201775A1 (de) * | 2013-02-04 | 2014-08-07 | Osram Gmbh | Beleuchtungsmodul und Verfahren zur Herstellung eines Beleuchtungsmoduls |
DE102013101262A1 (de) | 2013-02-08 | 2014-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer |
US9215794B2 (en) * | 2013-05-06 | 2015-12-15 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Circuit board and display device |
DE102013215588A1 (de) | 2013-08-07 | 2015-02-12 | Brose Fahrzeugteile GmbH & Co. Kommanditgesellschaft, Würzburg | Leiterplattenanordnung, Steuervorrichtung für ein Kühlerlüftermodul und Verfahren |
JP2015176975A (ja) * | 2014-03-14 | 2015-10-05 | パナソニックIpマネジメント株式会社 | 半導体装置 |
CN109188631B (zh) * | 2018-09-26 | 2022-06-24 | 昂纳信息技术(深圳)有限公司 | 一种尾纤的防脱落方法及光学装置 |
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DE2528000B2 (de) * | 1975-06-24 | 1979-12-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Herstellung einer Lötfläche relativ großer Abmessungen |
US6546620B1 (en) * | 2000-06-29 | 2003-04-15 | Amkor Technology, Inc. | Flip chip integrated circuit and passive chip component package fabrication method |
US6660559B1 (en) * | 2001-06-25 | 2003-12-09 | Amkor Technology, Inc. | Method of making a chip carrier package using laser ablation |
DE10351120A1 (de) | 2003-11-03 | 2005-06-09 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Lötstopbarriere |
DE102004016697B4 (de) * | 2004-02-27 | 2007-10-11 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Halbleiterchips umfassend ein Verbindungsverfahren, das Löten mit einem Lot umfasst, und Halbleiterchip |
EP1575084B1 (en) * | 2004-03-01 | 2010-05-26 | Imec | Method for depositing a solder material on a substrate |
CN100571353C (zh) | 2005-05-13 | 2009-12-16 | 奥斯兰姆奥普托半导体有限责任公司 | 投影设备 |
DE102005031336B4 (de) * | 2005-05-13 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Projektionseinrichtung |
KR100658939B1 (ko) | 2005-05-24 | 2006-12-15 | 엘지전자 주식회사 | 발광 소자의 패키지 |
US20060289887A1 (en) | 2005-06-24 | 2006-12-28 | Jabil Circuit, Inc. | Surface mount light emitting diode (LED) assembly with improved power dissipation |
KR100699161B1 (ko) | 2005-10-06 | 2007-03-22 | 엘지전자 주식회사 | 발광 소자 패키지 및 그의 제조 방법 |
KR20080007961A (ko) | 2006-07-19 | 2008-01-23 | 알티전자 주식회사 | 엘이디 모듈의 냉각 장치 및 그 제조 방법 |
DE102006059127A1 (de) * | 2006-09-25 | 2008-03-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Anordnung optoelektronischer Bauelemente und Anordnung optoelektronischer Bauelemente |
CN101154656B (zh) | 2006-09-30 | 2010-05-12 | 香港微晶先进封装技术有限公司 | 多芯片发光二极管模组结构及其制造方法 |
JP5145729B2 (ja) | 2007-02-26 | 2013-02-20 | 富士電機株式会社 | 半田接合方法およびそれを用いた半導体装置の製造方法 |
JP5649958B2 (ja) * | 2007-04-24 | 2015-01-07 | セラムテック ゲゼルシャフト ミット ベシュレンクテル ハフツングCeramTec GmbH | メタライズされた表面を備えるセラミックボディを有するコンポーネント |
DE102008063325A1 (de) | 2008-12-30 | 2010-07-01 | Osram Opto Semiconductors Gmbh | Verfahren zur Fertigung von Leuchtmitteln |
-
2008
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- 2009-11-27 CN CN200980153425.3A patent/CN102272925B/zh active Active
- 2009-11-27 KR KR1020117017729A patent/KR101681343B1/ko active IP Right Grant
- 2009-11-27 EP EP12186956A patent/EP2544234A1/de not_active Withdrawn
- 2009-11-27 EP EP09771691.4A patent/EP2371000B1/de active Active
- 2009-11-27 WO PCT/DE2009/001693 patent/WO2010075831A1/de active Application Filing
- 2009-11-27 US US13/142,391 patent/US8809082B2/en active Active
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CN102272925B (zh) | 2014-01-01 |
EP2371000B1 (de) | 2016-10-26 |
US20120107973A1 (en) | 2012-05-03 |
US8809082B2 (en) | 2014-08-19 |
EP2371000A1 (de) | 2011-10-05 |
JP2012514340A (ja) | 2012-06-21 |
DE102008063325A1 (de) | 2010-07-01 |
EP2544234A1 (de) | 2013-01-09 |
KR101681343B1 (ko) | 2016-11-30 |
WO2010075831A1 (de) | 2010-07-08 |
CN102272925A (zh) | 2011-12-07 |
KR20110100307A (ko) | 2011-09-09 |
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