JP5762632B2 - 構造化された焼結結合層の製造方法及び構造化された焼結結合層を備えている半導体素子 - Google Patents
構造化された焼結結合層の製造方法及び構造化された焼結結合層を備えている半導体素子 Download PDFInfo
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- JP5762632B2 JP5762632B2 JP2014516395A JP2014516395A JP5762632B2 JP 5762632 B2 JP5762632 B2 JP 5762632B2 JP 2014516395 A JP2014516395 A JP 2014516395A JP 2014516395 A JP2014516395 A JP 2014516395A JP 5762632 B2 JP5762632 B2 JP 5762632B2
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- 238000000034 method Methods 0.000 title claims description 29
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- 229910052751 metal Inorganic materials 0.000 claims description 9
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- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
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- 229910052802 copper Inorganic materials 0.000 description 6
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
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- 239000008117 stearic acid Substances 0.000 description 1
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Description
本発明が基礎とする着想は、基板とチップとの間に良好な電気的及び熱的な結合を確立し、更にはチップ内の機械的な応力も低減する焼結結合部を基板とチップとの間に形成することである。このことは、基板とチップとの間においてコンタクト面上に構造化されて位置決めされる複数の焼結要素から成る焼結層によって解決される。コンタクト面の中心における焼結要素の面占有率が高くなっていることによって、チップの動作時に一般的に高い温度が発生する領域において、良好な熱伝性及び導電性を保証することができる。コンタクト面の縁部においては、焼結要素の面占有率が中心における面占有率よりも低いので、それにより縁部領域では焼結時に各焼結要素に作用する圧縮圧力が中心領域よりも著しく高くなっており、それによって縁部領域における焼結結合部の信頼性が高められている。
Claims (10)
- 焼結層(12)の製造方法において、
前記焼結層(12)を形成する出発材料から成る複数の焼結要素(22a,22b,22c)を構造化して、基板(11)の主表面(11a)のコンタクト面(21)上に被着させるステップと、
前記基板(11)と接続すべきチップ(13)を前記焼結要素(22a,22b,22c)の上に配置するステップと、
前記基板(11)と前記チップ(13)を接続し、且つ前記コンタクト面(21)の内側に延在する、構造化された焼結層(12)を形成するために前記焼結要素(22a,22b,22c)を加熱及び圧縮するステップとを備えており、
前記コンタクト面(21)の中心領域(21a)における、前記基板(11)上の焼結要素(22a,22b,22c)の面占有率は、前記コンタクト面(21)の縁部領域(21c)における焼結要素(22a,22b,22c)の面占有率よりも大きく、
各焼結要素(22a,22b,22c)からは、前記基板(11)の前記主表面(11a)に対して水平方向に延在している少なくとも一つの通路(23)が前記コンタクト面(21)の縁部まで形成されていることを特徴とする、焼結層(12)の製造方法。 - 前記出発材料は、マイクロ粒子及び/又はナノ粒子から成るものであり、且つ、主成分として銀を含有している焼結ペーストである、請求項1に記載の方法。
- 前記コンタクト面(21)の前記縁部領域(21c)における焼結要素(22a,22b,22c)の数は、前記コンタクト面(21)の中心領域(21a)における焼結要素(22a,22b,22c)の数よりも多い、請求項1又は2に記載の方法。
- 前記中心領域(21a)と前記縁部領域(21c)との間の前記コンタクト面(21)の領域(21b)における、前記基板(11)上の焼結要素(22a,22b,22c)の面占有率は、前記コンタクト面(21)の前記中心領域(21a)における面占有率と、前記縁部領域(21c)における面占有率との間にある、請求項1乃至3のいずれか一項に記載の方法。
- 前記コンタクト面(21)の縁部は、水平方向において、前記基板(11)の前記主表面(11a)に沿って、前記チップ(13)のエッジから所定の長さだけ離隔されて設けられている、請求項1乃至4のいずれか一項に記載の方法。
- 半導体素子(10)において、
該半導体素子(10)は、
主表面(11a)を備えている基板(11)と、
前記基板(11)の前記主表面(11a)上に配置されている半導体チップ(13)と、
前記基板(11)と前記半導体チップ(13)との間において前記主表面(11a)のコンタクト面(21)上に配置されており、且つ、前記半導体チップ(13)を前記基板(11)に接続させる、構造化された焼結層(12)とを有しており、
前記焼結層(12)は複数の焼結要素(22a,22b,22c)を含んでおり、前記コンタクト面(21)の中心領域(21a)における、前記基板(11)上の焼結要素(22a,22b,22c)の面占有率は、前記コンタクト面(21)の縁部領域(21c)における焼結要素(22a,22b,22c)の面占有率よりも大きく、
各焼結要素(22a,22b,22c)からは、前記基板(11)の前記主表面(11a)に対して水平方向に延在している少なくとも一つの通路(23)が、前記基板(11)と前記半導体チップ(13)との間において前記コンタクト面(21)の縁部まで形成されている、ことを特徴とする半導体素子(10)。 - 前記コンタクト面(21)の前記縁部領域(21c)における焼結要素(22a,22b,22c)の数は、前記コンタクト面(21)の中心領域(21a)における焼結要素(22a,22b,22c)の数よりも多い、請求項6に記載の半導体素子(10)。
- 前記中心領域(21a)と前記縁部領域(21c)との間の前記コンタクト面(21)の領域(21b)における、前記基板(11)上の焼結要素(22a,22b,22c)の面占有率は、前記コンタクト面(21)の前記中心領域(21a)における面占有率と、前記縁部領域(21c)における面占有率との間にある、請求項6又は7に記載の半導体素子(10)。
- 前記半導体チップ(13)にはパワートランジスタ又はパワーダイオード又はサイリスタが含まれ、
前記基板(11)にはDBC基板、IMS(Insulated Metal Substrate)基板、PCB(Printed Circuit Board)基板、AMB(Active Metal Brazing)基板又はセラミック性の単層又は多層の基板が含まれる、請求項6乃至8のいずれか一項に記載の半導体素子(10)。 - 前記コンタクト面(21)の前記中心領域(21a)における焼結要素(22a)の水平方向の寸法は、前記コンタクト面(21)の前記縁部領域(21c)における焼結要素(22c)の水平方向の寸法よりも大きい、請求項6乃至9のいずれか一項に記載の半導体素子(10)。
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DE102020102876B4 (de) * | 2020-02-05 | 2023-08-10 | Infineon Technologies Ag | Elektronisches Bauelement, Herstellungsverfahren dafür und Verfahren zur Herstellung eines elektronischen Moduls dieses aufweisend mittels eines Sinterverfahrens mit einer Opferschicht auf der Rückseitenmetallisierung eines Halbleiterdies |
DE102021130989A1 (de) | 2021-11-25 | 2023-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Elektronisches bauelement und verfahren zum herstellen eines elektronischen bauelements |
DE102021214757A1 (de) * | 2021-12-21 | 2023-06-22 | Magna powertrain gmbh & co kg | Optimiertes Verfahren zur Anbindung von Leistungsmodulen, sowie Bauteil |
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JPH06302628A (ja) * | 1993-04-09 | 1994-10-28 | Nippon Steel Corp | ダイボンド方法及びその装置 |
JP3934565B2 (ja) * | 2003-02-21 | 2007-06-20 | 富士通株式会社 | 半導体装置 |
JP4613077B2 (ja) * | 2005-02-28 | 2011-01-12 | 株式会社オクテック | 半導体装置、電極用部材および電極用部材の製造方法 |
CN101479839A (zh) * | 2006-04-24 | 2009-07-08 | 株式会社村田制作所 | 电子元件、使用该电子元件的电子元件装置及其制造方法 |
JP2008010703A (ja) * | 2006-06-30 | 2008-01-17 | Fuji Electric Holdings Co Ltd | 半導体装置の部品間接合方法 |
JP4361572B2 (ja) * | 2007-02-28 | 2009-11-11 | 株式会社新川 | ボンディング装置及び方法 |
JP2008294280A (ja) * | 2007-05-25 | 2008-12-04 | Showa Denko Kk | 半導体装置 |
JP5012239B2 (ja) * | 2007-06-13 | 2012-08-29 | 株式会社デンソー | 接合方法及び接合体 |
JP2009054893A (ja) | 2007-08-28 | 2009-03-12 | Panasonic Electric Works Co Ltd | 発光装置 |
DE102007063308A1 (de) | 2007-12-28 | 2009-07-02 | Robert Bosch Gmbh | Diode |
KR20100013033A (ko) * | 2008-07-30 | 2010-02-09 | 삼성전자주식회사 | 도금 층을 구비한 도전성 잉크 및 페이스트 인쇄회로기판및 그 제조 방법 |
JP2011071301A (ja) * | 2009-09-25 | 2011-04-07 | Honda Motor Co Ltd | 金属ナノ粒子を用いた接合方法及び接合体 |
US8787003B2 (en) * | 2011-10-12 | 2014-07-22 | Infineon Technologies Ag | Low inductance capacitor module and power system with low inductance capacitor module |
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US9887173B2 (en) | 2018-02-06 |
CN103635997B (zh) | 2017-09-01 |
DE102011078582A1 (de) | 2013-01-10 |
CN103635997A (zh) | 2014-03-12 |
EP2729965B1 (de) | 2020-08-05 |
JP2014517546A (ja) | 2014-07-17 |
WO2013004543A9 (de) | 2013-03-14 |
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