JP5757103B2 - ワイドバンドギャップ逆阻止mos型半導体装置 - Google Patents
ワイドバンドギャップ逆阻止mos型半導体装置 Download PDFInfo
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- JP5757103B2 JP5757103B2 JP2011034298A JP2011034298A JP5757103B2 JP 5757103 B2 JP5757103 B2 JP 5757103B2 JP 2011034298 A JP2011034298 A JP 2011034298A JP 2011034298 A JP2011034298 A JP 2011034298A JP 5757103 B2 JP5757103 B2 JP 5757103B2
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- 239000004065 semiconductor Substances 0.000 title claims description 82
- 230000000903 blocking effect Effects 0.000 title claims description 66
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 82
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 67
- 230000015556 catabolic process Effects 0.000 claims description 46
- 229910002601 GaN Inorganic materials 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 92
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- 238000004519 manufacturing process Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000002457 bidirectional effect Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910000074 antimony hydride Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Description
2、 SiC−p+型ベース領域
3、 SiC−p型エピタキシャル領域
4、 SiC−n型J−FET領域
5、 SiC−n+型ソース領域
6、 SiC−p+型ボディ領域
7、304 ゲート絶縁膜
8、 ゲート電極
9、 BPSG(ボロフォスフォシリケートガラス)
9a 絶縁保護膜
10、 ソース電極
12、 ドレイン電極
12a、 コレクタ電極
13、 p型領域
15、15a 点線
14、 コレクタ接合
16、 空乏層
17、 FLR
18、307 絶縁保護膜
19 p+型ベース領域の開口部
20、 トレンチ分離層
21、 絶縁膜
22、 JTE
22a、 SiC−p-型接合終端伸張領域
22b、 SiC−p-型接合終端伸張領域
23、 チャネルストッパ
24、 接合分離領域
25、 コレクタ領域
26、 p型層
30、 耐圧構造部
40 活性領域
100、 SiC−p+型基板
101、 裏面トレンチ
102、 チタン電極
103、 ニッケル電極
200、 活性領域
201、 素子端部
202、 トレンチ分離領域
203、 耐圧構造部
300、 Si−n-型ドリフト層
301、 Si−p型ベース領域
302、 Si−p+型ボディ領域
303、 Si−n+型エミッタ領域
305、 ポリシリコン
306、 BPSG
308、 Si−p型コレクタ領域
310、 エミッタ電極
311、 ゲート電極
312、 コレクタ電極
320、 Si−p+型FLR
321、 Si−p+型接合分離領域
400、 SiC−n+型基板
401、 SiC−p型エピタキシャル領域
500、 Si−p+型基板
600、 Si−n+型基板
601、 Si−p型エピタキシャル領域
700、 活性領域
701、 耐圧構造部
702、 素子終端部
1001、 トランジスタ、IGBT
1002、 ダイオード
1003、 逆阻止IGBT
Claims (6)
- 第1導電型のワイドバンドギャップ半導体層の一方の主面側に、第2導電型の半導体基板と、該第2導電型の半導体基板を貫通して前記第1導電型のワイドバンドギャップ半導体層に達する複数のトレンチと、該複数のトレンチ底部に前記第1導電型のワイドバンドギャップ半導体層と接触してショットキー接合を形成する金属膜とを備え、該ショットキー接合が形成されている領域に対向する他方の主面側領域に、MOSゲート構造を含む活性領域と、該活性領域の外周を取り巻く耐圧構造領域と、該耐圧構造領域を取り巻き前記他方の主面から前記第2導電型の半導体基板に達するとともに内部に絶縁膜が充填されるトレンチ分離層とを備え、前記第1導電型のワイドバンドギャップ半導体層の他方の主面に形成されるMOSゲート構造を含む活性領域の表面から、該表面と45度以上の角度をなして投影される範囲内のみの前記第1導電型のワイドバンドギャップ半導体層の領域に、該第1導電型のワイドバンドギャップ半導体層の一方の主面側から前記トレンチが配設されていることを特徴とするワイドバンドギャップ逆阻止MOS型半導体装置。
- 前記第1導電型のワイドバンドギャップ半導体層が炭化珪素半導体層であり、第2導電型の半導体基板が第2導電型炭化珪素半導体基板であることを特徴とする請求項1記載のワイドバンドギャップ逆阻止MOS型半導体装置。
- 第2導電型の炭化珪素半導体基板の不純物濃度が第1導電型の炭化珪素半導体層の不純物濃度より高いことを特徴とする請求項2記載のワイドバンドギャップ逆阻止MOS型半導体装置。
- 前記第1導電型のワイドバンドギャップ半導体層が窒化ガリウム半導体層であり、前記第2導電型の半導体基板が第2導電型のシリコン半導体基板であることを特徴とする請求項1記載のワイドバンドギャップ逆阻止MOS型半導体装置。
- 前記窒化ガリウム半導体層と前記第2導電型のシリコン半導体基板の間に窒化アルミニウム層をバッファ層として挟まれていることを特徴とする請求項4記載のワイドバンドギャップ逆阻止MOS型半導体装置。
- MOS型半導体装置がMOSFETまたはMISFETであることを特徴とする請求項1乃至5のいずれか一項に記載のワイドバンドギャップ逆阻止MOS型半導体装置。
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JP5866827B2 (ja) * | 2011-06-30 | 2016-02-24 | 富士電機株式会社 | 逆阻止型絶縁ゲート型バイポーラトランジスタの製造方法 |
US8772126B2 (en) * | 2012-08-10 | 2014-07-08 | Infineon Technologies Ag | Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device |
US9373691B2 (en) * | 2013-08-07 | 2016-06-21 | GlobalFoundries, Inc. | Transistor with bonded gate dielectric |
US9385222B2 (en) * | 2014-02-14 | 2016-07-05 | Infineon Technologies Ag | Semiconductor device with insert structure at a rear side and method of manufacturing |
JP6337964B2 (ja) * | 2014-07-23 | 2018-06-06 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
EP3038162B1 (en) * | 2014-12-24 | 2019-09-04 | ABB Schweiz AG | Junction barrier Schottky rectifier |
US9780206B2 (en) * | 2015-02-27 | 2017-10-03 | Purdue Research Foundation | Methods of reducing the electrical and thermal resistance of SiC substrates and devices made thereby |
JP6550802B2 (ja) * | 2015-03-10 | 2019-07-31 | 富士電機株式会社 | 半導体素子 |
CN108463885A (zh) | 2015-12-11 | 2018-08-28 | 罗姆股份有限公司 | 半导体装置 |
CN109478568A (zh) * | 2016-07-15 | 2019-03-15 | 罗姆股份有限公司 | 半导体装置及半导体装置的制造方法 |
WO2018034250A1 (ja) | 2016-08-19 | 2018-02-22 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
CN109643728B (zh) * | 2016-08-19 | 2022-04-29 | 罗姆股份有限公司 | 半导体装置 |
JP6906427B2 (ja) * | 2017-11-09 | 2021-07-21 | 株式会社豊田中央研究所 | 窒化物半導体装置とその製造方法 |
US11233141B2 (en) | 2018-01-16 | 2022-01-25 | Ipower Semiconductor | Self-aligned and robust IGBT devices |
CN111602250B (zh) * | 2018-02-07 | 2023-08-11 | 艾鲍尔半导体 | 具有用于场截止和反向传导的三维背侧结构的igbt器件 |
JP6980619B2 (ja) * | 2018-08-31 | 2021-12-15 | 株式会社東芝 | 半導体装置、および半導体装置の製造方法 |
US11411099B2 (en) * | 2019-05-28 | 2022-08-09 | Glc Semiconductor Group (Cq) Co., Ltd. | Semiconductor device |
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US7132321B2 (en) * | 2002-10-24 | 2006-11-07 | The United States Of America As Represented By The Secretary Of The Navy | Vertical conducting power semiconductor devices implemented by deep etch |
JP4292964B2 (ja) * | 2003-08-08 | 2009-07-08 | 三菱電機株式会社 | 縦型半導体装置 |
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JP2010206002A (ja) * | 2009-03-04 | 2010-09-16 | Fuji Electric Systems Co Ltd | pチャネル型炭化珪素MOSFET |
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