JP5744912B2 - スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム - Google Patents

スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム Download PDF

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Publication number
JP5744912B2
JP5744912B2 JP2012548058A JP2012548058A JP5744912B2 JP 5744912 B2 JP5744912 B2 JP 5744912B2 JP 2012548058 A JP2012548058 A JP 2012548058A JP 2012548058 A JP2012548058 A JP 2012548058A JP 5744912 B2 JP5744912 B2 JP 5744912B2
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JP
Japan
Prior art keywords
mtj element
read
distribution
resistance state
mtj
Prior art date
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JP2012548058A
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English (en)
Japanese (ja)
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JP2013516726A5 (https=
JP2013516726A (ja
Inventor
ウォーレッジ、ダニエル、シー
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2012548058A 2010-01-08 2011-01-03 スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム Expired - Fee Related JP5744912B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/684,510 US8107285B2 (en) 2010-01-08 2010-01-08 Read direction for spin-torque based memory device
US12/684,510 2010-01-08
PCT/US2011/020011 WO2011084906A1 (en) 2010-01-08 2011-01-03 Read direction for spin-torque based memory device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014142257A Division JP2014209405A (ja) 2010-01-08 2014-07-10 スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム

Publications (3)

Publication Number Publication Date
JP2013516726A JP2013516726A (ja) 2013-05-13
JP2013516726A5 JP2013516726A5 (https=) 2013-10-03
JP5744912B2 true JP5744912B2 (ja) 2015-07-08

Family

ID=44258409

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012548058A Expired - Fee Related JP5744912B2 (ja) 2010-01-08 2011-01-03 スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム
JP2014142257A Pending JP2014209405A (ja) 2010-01-08 2014-07-10 スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014142257A Pending JP2014209405A (ja) 2010-01-08 2014-07-10 スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム

Country Status (8)

Country Link
US (1) US8107285B2 (https=)
JP (2) JP5744912B2 (https=)
KR (1) KR20120125229A (https=)
CN (1) CN102687202B (https=)
DE (1) DE112011100085T5 (https=)
GB (1) GB2489360B (https=)
TW (1) TWI505268B (https=)
WO (1) WO2011084906A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012243364A (ja) * 2011-05-20 2012-12-10 Fujitsu Ltd 磁気メモリデバイスの駆動方法及び磁気メモリデバイス
US20130028010A1 (en) * 2011-07-29 2013-01-31 Qualcomm Incorporated Fast MTJ Switching Write Circuit For MRAM Array
KR102124209B1 (ko) 2014-04-14 2020-06-18 삼성전자주식회사 반도체 메모리 장치
US10311928B2 (en) 2015-10-15 2019-06-04 Samsung Electronics Co., Ltd. Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US7474557B2 (en) 2001-06-29 2009-01-06 International Business Machines Corporation MRAM array and access method thereof
US6646911B2 (en) * 2001-10-26 2003-11-11 Mitsubishi Denki Kabushiki Kaisha Thin film magnetic memory device having data read current tuning function
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4626253B2 (ja) * 2004-10-08 2011-02-02 ソニー株式会社 記憶装置
JP4883982B2 (ja) * 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7286395B2 (en) 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
DE602006013948D1 (de) * 2006-05-04 2010-06-10 Hitachi Ltd Magnetspeichervorrichtung
JP5076361B2 (ja) * 2006-05-18 2012-11-21 株式会社日立製作所 半導体装置
US7379327B2 (en) 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
JP4250644B2 (ja) * 2006-08-21 2009-04-08 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
TWI317125B (en) * 2006-12-27 2009-11-11 Macronix Int Co Ltd Structure of magnetic random access memory using spin-torque transfer writing and method for manufacturing same
US8004880B2 (en) 2007-03-06 2011-08-23 Qualcomm Incorporated Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory
US7764537B2 (en) 2007-04-05 2010-07-27 Qualcomm Incorporated Spin transfer torque magnetoresistive random access memory and design methods
US7825445B2 (en) 2007-11-29 2010-11-02 Seagate Technology Llc Magnetoresistive memory elements with separate read and write current paths
US7919794B2 (en) 2008-01-08 2011-04-05 Qualcomm, Incorporated Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell

Also Published As

Publication number Publication date
JP2014209405A (ja) 2014-11-06
CN102687202A (zh) 2012-09-19
DE112011100085T5 (de) 2012-09-20
US20110170340A1 (en) 2011-07-14
CN102687202B (zh) 2014-01-15
WO2011084906A1 (en) 2011-07-14
US8107285B2 (en) 2012-01-31
TW201203239A (en) 2012-01-16
TWI505268B (zh) 2015-10-21
GB201211967D0 (en) 2012-08-15
KR20120125229A (ko) 2012-11-14
JP2013516726A (ja) 2013-05-13
GB2489360A (en) 2012-09-26
GB2489360B (en) 2015-05-20

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