TWI505268B - 用於旋轉力矩式記憶體裝置之讀取方向 - Google Patents
用於旋轉力矩式記憶體裝置之讀取方向 Download PDFInfo
- Publication number
- TWI505268B TWI505268B TW100100413A TW100100413A TWI505268B TW I505268 B TWI505268 B TW I505268B TW 100100413 A TW100100413 A TW 100100413A TW 100100413 A TW100100413 A TW 100100413A TW I505268 B TWI505268 B TW I505268B
- Authority
- TW
- Taiwan
- Prior art keywords
- mtj
- read
- current
- magnetic storage
- memory device
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 19
- 230000005641 tunneling Effects 0.000 claims description 12
- 230000000295 complement effect Effects 0.000 claims description 9
- 238000004590 computer program Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 230000000977 initiatory effect Effects 0.000 claims 2
- 238000009826 distribution Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/684,510 US8107285B2 (en) | 2010-01-08 | 2010-01-08 | Read direction for spin-torque based memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201203239A TW201203239A (en) | 2012-01-16 |
| TWI505268B true TWI505268B (zh) | 2015-10-21 |
Family
ID=44258409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100100413A TWI505268B (zh) | 2010-01-08 | 2011-01-05 | 用於旋轉力矩式記憶體裝置之讀取方向 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8107285B2 (https=) |
| JP (2) | JP5744912B2 (https=) |
| KR (1) | KR20120125229A (https=) |
| CN (1) | CN102687202B (https=) |
| DE (1) | DE112011100085T5 (https=) |
| GB (1) | GB2489360B (https=) |
| TW (1) | TWI505268B (https=) |
| WO (1) | WO2011084906A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012243364A (ja) * | 2011-05-20 | 2012-12-10 | Fujitsu Ltd | 磁気メモリデバイスの駆動方法及び磁気メモリデバイス |
| US20130028010A1 (en) * | 2011-07-29 | 2013-01-31 | Qualcomm Incorporated | Fast MTJ Switching Write Circuit For MRAM Array |
| KR102124209B1 (ko) | 2014-04-14 | 2020-06-18 | 삼성전자주식회사 | 반도체 메모리 장치 |
| US10311928B2 (en) | 2015-10-15 | 2019-06-04 | Samsung Electronics Co., Ltd. | Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6646911B2 (en) * | 2001-10-26 | 2003-11-11 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device having data read current tuning function |
| US6876576B2 (en) * | 2002-06-04 | 2005-04-05 | Renesas Technology Corp. | Thin film magnetic memory device having redundant configuration |
| US7474557B2 (en) * | 2001-06-29 | 2009-01-06 | International Business Machines Corporation | MRAM array and access method thereof |
| TWI310554B (en) * | 2006-05-04 | 2009-06-01 | Hitachi Ltd | Magnetic memory device and the writing method thereof |
| US20090174015A1 (en) * | 2008-01-08 | 2009-07-09 | Qualcomm Incorporated | Memory Cell and Method of Forming a Magnetic Tunnel Junction (MTJ) of a Memory Cell |
| TWI317125B (en) * | 2006-12-27 | 2009-11-11 | Macronix Int Co Ltd | Structure of magnetic random access memory using spin-torque transfer writing and method for manufacturing same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3920565B2 (ja) * | 2000-12-26 | 2007-05-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| JP4626253B2 (ja) * | 2004-10-08 | 2011-02-02 | ソニー株式会社 | 記憶装置 |
| JP4883982B2 (ja) * | 2005-10-19 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
| US7286395B2 (en) | 2005-10-27 | 2007-10-23 | Grandis, Inc. | Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells |
| JP5076361B2 (ja) * | 2006-05-18 | 2012-11-21 | 株式会社日立製作所 | 半導体装置 |
| US7379327B2 (en) | 2006-06-26 | 2008-05-27 | Grandis, Inc. | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins |
| JP4250644B2 (ja) * | 2006-08-21 | 2009-04-08 | 株式会社東芝 | 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法 |
| US8004880B2 (en) | 2007-03-06 | 2011-08-23 | Qualcomm Incorporated | Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory |
| US7764537B2 (en) | 2007-04-05 | 2010-07-27 | Qualcomm Incorporated | Spin transfer torque magnetoresistive random access memory and design methods |
| US7825445B2 (en) | 2007-11-29 | 2010-11-02 | Seagate Technology Llc | Magnetoresistive memory elements with separate read and write current paths |
-
2010
- 2010-01-08 US US12/684,510 patent/US8107285B2/en active Active
-
2011
- 2011-01-03 JP JP2012548058A patent/JP5744912B2/ja not_active Expired - Fee Related
- 2011-01-03 DE DE112011100085T patent/DE112011100085T5/de not_active Withdrawn
- 2011-01-03 KR KR1020127013302A patent/KR20120125229A/ko not_active Ceased
- 2011-01-03 WO PCT/US2011/020011 patent/WO2011084906A1/en not_active Ceased
- 2011-01-03 GB GB1211967.3A patent/GB2489360B/en not_active Expired - Fee Related
- 2011-01-03 CN CN201180005111.6A patent/CN102687202B/zh active Active
- 2011-01-05 TW TW100100413A patent/TWI505268B/zh active
-
2014
- 2014-07-10 JP JP2014142257A patent/JP2014209405A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7474557B2 (en) * | 2001-06-29 | 2009-01-06 | International Business Machines Corporation | MRAM array and access method thereof |
| US6646911B2 (en) * | 2001-10-26 | 2003-11-11 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device having data read current tuning function |
| US6876576B2 (en) * | 2002-06-04 | 2005-04-05 | Renesas Technology Corp. | Thin film magnetic memory device having redundant configuration |
| TWI310554B (en) * | 2006-05-04 | 2009-06-01 | Hitachi Ltd | Magnetic memory device and the writing method thereof |
| TWI317125B (en) * | 2006-12-27 | 2009-11-11 | Macronix Int Co Ltd | Structure of magnetic random access memory using spin-torque transfer writing and method for manufacturing same |
| US20090174015A1 (en) * | 2008-01-08 | 2009-07-09 | Qualcomm Incorporated | Memory Cell and Method of Forming a Magnetic Tunnel Junction (MTJ) of a Memory Cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014209405A (ja) | 2014-11-06 |
| CN102687202A (zh) | 2012-09-19 |
| DE112011100085T5 (de) | 2012-09-20 |
| US20110170340A1 (en) | 2011-07-14 |
| CN102687202B (zh) | 2014-01-15 |
| WO2011084906A1 (en) | 2011-07-14 |
| US8107285B2 (en) | 2012-01-31 |
| TW201203239A (en) | 2012-01-16 |
| GB201211967D0 (en) | 2012-08-15 |
| JP5744912B2 (ja) | 2015-07-08 |
| KR20120125229A (ko) | 2012-11-14 |
| JP2013516726A (ja) | 2013-05-13 |
| GB2489360A (en) | 2012-09-26 |
| GB2489360B (en) | 2015-05-20 |
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