CN102687202B - 用于基于自旋扭矩的存储器装置的读取方向 - Google Patents

用于基于自旋扭矩的存储器装置的读取方向 Download PDF

Info

Publication number
CN102687202B
CN102687202B CN201180005111.6A CN201180005111A CN102687202B CN 102687202 B CN102687202 B CN 102687202B CN 201180005111 A CN201180005111 A CN 201180005111A CN 102687202 B CN102687202 B CN 102687202B
Authority
CN
China
Prior art keywords
mtj element
spin
torque
magnetic storage
resistance state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180005111.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN102687202A (zh
Inventor
D·C·沃莱吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN102687202A publication Critical patent/CN102687202A/zh
Application granted granted Critical
Publication of CN102687202B publication Critical patent/CN102687202B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201180005111.6A 2010-01-08 2011-01-03 用于基于自旋扭矩的存储器装置的读取方向 Active CN102687202B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/684,510 US8107285B2 (en) 2010-01-08 2010-01-08 Read direction for spin-torque based memory device
US12/684,510 2010-01-08
PCT/US2011/020011 WO2011084906A1 (en) 2010-01-08 2011-01-03 Read direction for spin-torque based memory device

Publications (2)

Publication Number Publication Date
CN102687202A CN102687202A (zh) 2012-09-19
CN102687202B true CN102687202B (zh) 2014-01-15

Family

ID=44258409

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180005111.6A Active CN102687202B (zh) 2010-01-08 2011-01-03 用于基于自旋扭矩的存储器装置的读取方向

Country Status (8)

Country Link
US (1) US8107285B2 (https=)
JP (2) JP5744912B2 (https=)
KR (1) KR20120125229A (https=)
CN (1) CN102687202B (https=)
DE (1) DE112011100085T5 (https=)
GB (1) GB2489360B (https=)
TW (1) TWI505268B (https=)
WO (1) WO2011084906A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012243364A (ja) * 2011-05-20 2012-12-10 Fujitsu Ltd 磁気メモリデバイスの駆動方法及び磁気メモリデバイス
US20130028010A1 (en) * 2011-07-29 2013-01-31 Qualcomm Incorporated Fast MTJ Switching Write Circuit For MRAM Array
KR102124209B1 (ko) 2014-04-14 2020-06-18 삼성전자주식회사 반도체 메모리 장치
US10311928B2 (en) 2015-10-15 2019-06-04 Samsung Electronics Co., Ltd. Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US7474557B2 (en) 2001-06-29 2009-01-06 International Business Machines Corporation MRAM array and access method thereof
US6646911B2 (en) * 2001-10-26 2003-11-11 Mitsubishi Denki Kabushiki Kaisha Thin film magnetic memory device having data read current tuning function
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4626253B2 (ja) * 2004-10-08 2011-02-02 ソニー株式会社 記憶装置
JP4883982B2 (ja) * 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7286395B2 (en) 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
DE602006013948D1 (de) * 2006-05-04 2010-06-10 Hitachi Ltd Magnetspeichervorrichtung
JP5076361B2 (ja) * 2006-05-18 2012-11-21 株式会社日立製作所 半導体装置
US7379327B2 (en) 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
JP4250644B2 (ja) * 2006-08-21 2009-04-08 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
TWI317125B (en) * 2006-12-27 2009-11-11 Macronix Int Co Ltd Structure of magnetic random access memory using spin-torque transfer writing and method for manufacturing same
US8004880B2 (en) 2007-03-06 2011-08-23 Qualcomm Incorporated Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory
US7764537B2 (en) 2007-04-05 2010-07-27 Qualcomm Incorporated Spin transfer torque magnetoresistive random access memory and design methods
US7825445B2 (en) 2007-11-29 2010-11-02 Seagate Technology Llc Magnetoresistive memory elements with separate read and write current paths
US7919794B2 (en) 2008-01-08 2011-04-05 Qualcomm, Incorporated Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell

Also Published As

Publication number Publication date
JP2014209405A (ja) 2014-11-06
CN102687202A (zh) 2012-09-19
DE112011100085T5 (de) 2012-09-20
US20110170340A1 (en) 2011-07-14
WO2011084906A1 (en) 2011-07-14
US8107285B2 (en) 2012-01-31
TW201203239A (en) 2012-01-16
TWI505268B (zh) 2015-10-21
GB201211967D0 (en) 2012-08-15
JP5744912B2 (ja) 2015-07-08
KR20120125229A (ko) 2012-11-14
JP2013516726A (ja) 2013-05-13
GB2489360A (en) 2012-09-26
GB2489360B (en) 2015-05-20

Similar Documents

Publication Publication Date Title
CN105934794B (zh) 高密度低功率gshe-stt mram
US7180770B2 (en) Series diode thermally assisted MRAM
US8466524B2 (en) Static magnetic field assisted resistive sense element
CN100541650C (zh) 非易失性存储阵列和地址转换方法
US8243503B2 (en) Magnetic storage element responsive to spin polarized current
US7684234B2 (en) Methods and apparatus for thermally assisted programming of a magnetic memory device
US6510080B1 (en) Three terminal magnetic random access memory
US8437180B2 (en) Memory and write control method
CN102543180A (zh) 具有可独立编程自由层畴的多位磁存储器
JP5137405B2 (ja) 磁気メモリ素子及び磁気メモリ装置
CN102687202B (zh) 用于基于自旋扭矩的存储器装置的读取方向
US20070291531A1 (en) Mram with a write driver and a method therefor
CN114788028B (zh) 一种磁性随机存储器及电子设备
US20040042260A1 (en) Write current shunting compensation
JP5140859B2 (ja) 半導体装置
US20040066667A1 (en) Write current shunting compensation

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171106

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171106

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

TR01 Transfer of patent right