DE112011100085T5 - Leserichtung für auf dem Spin-Torque-Effekt basierende Speichereinheit - Google Patents

Leserichtung für auf dem Spin-Torque-Effekt basierende Speichereinheit Download PDF

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Publication number
DE112011100085T5
DE112011100085T5 DE112011100085T DE112011100085T DE112011100085T5 DE 112011100085 T5 DE112011100085 T5 DE 112011100085T5 DE 112011100085 T DE112011100085 T DE 112011100085T DE 112011100085 T DE112011100085 T DE 112011100085T DE 112011100085 T5 DE112011100085 T5 DE 112011100085T5
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DE
Germany
Prior art keywords
mtj element
magnetic
layer
current
resistance state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112011100085T
Other languages
German (de)
English (en)
Inventor
Daniel C. Worledge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE112011100085T5 publication Critical patent/DE112011100085T5/de
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
DE112011100085T 2010-01-08 2011-01-03 Leserichtung für auf dem Spin-Torque-Effekt basierende Speichereinheit Withdrawn DE112011100085T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/684,510 US8107285B2 (en) 2010-01-08 2010-01-08 Read direction for spin-torque based memory device
US12/684,510 2010-01-08
PCT/US2011/020011 WO2011084906A1 (en) 2010-01-08 2011-01-03 Read direction for spin-torque based memory device

Publications (1)

Publication Number Publication Date
DE112011100085T5 true DE112011100085T5 (de) 2012-09-20

Family

ID=44258409

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112011100085T Withdrawn DE112011100085T5 (de) 2010-01-08 2011-01-03 Leserichtung für auf dem Spin-Torque-Effekt basierende Speichereinheit

Country Status (8)

Country Link
US (1) US8107285B2 (https=)
JP (2) JP5744912B2 (https=)
KR (1) KR20120125229A (https=)
CN (1) CN102687202B (https=)
DE (1) DE112011100085T5 (https=)
GB (1) GB2489360B (https=)
TW (1) TWI505268B (https=)
WO (1) WO2011084906A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012243364A (ja) * 2011-05-20 2012-12-10 Fujitsu Ltd 磁気メモリデバイスの駆動方法及び磁気メモリデバイス
US20130028010A1 (en) * 2011-07-29 2013-01-31 Qualcomm Incorporated Fast MTJ Switching Write Circuit For MRAM Array
KR102124209B1 (ko) 2014-04-14 2020-06-18 삼성전자주식회사 반도체 메모리 장치
US10311928B2 (en) 2015-10-15 2019-06-04 Samsung Electronics Co., Ltd. Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US7474557B2 (en) 2001-06-29 2009-01-06 International Business Machines Corporation MRAM array and access method thereof
US6646911B2 (en) * 2001-10-26 2003-11-11 Mitsubishi Denki Kabushiki Kaisha Thin film magnetic memory device having data read current tuning function
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4626253B2 (ja) * 2004-10-08 2011-02-02 ソニー株式会社 記憶装置
JP4883982B2 (ja) * 2005-10-19 2012-02-22 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7286395B2 (en) 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
DE602006013948D1 (de) * 2006-05-04 2010-06-10 Hitachi Ltd Magnetspeichervorrichtung
JP5076361B2 (ja) * 2006-05-18 2012-11-21 株式会社日立製作所 半導体装置
US7379327B2 (en) 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
JP4250644B2 (ja) * 2006-08-21 2009-04-08 株式会社東芝 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法
TWI317125B (en) * 2006-12-27 2009-11-11 Macronix Int Co Ltd Structure of magnetic random access memory using spin-torque transfer writing and method for manufacturing same
US8004880B2 (en) 2007-03-06 2011-08-23 Qualcomm Incorporated Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory
US7764537B2 (en) 2007-04-05 2010-07-27 Qualcomm Incorporated Spin transfer torque magnetoresistive random access memory and design methods
US7825445B2 (en) 2007-11-29 2010-11-02 Seagate Technology Llc Magnetoresistive memory elements with separate read and write current paths
US7919794B2 (en) 2008-01-08 2011-04-05 Qualcomm, Incorporated Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell

Also Published As

Publication number Publication date
JP2014209405A (ja) 2014-11-06
CN102687202A (zh) 2012-09-19
US20110170340A1 (en) 2011-07-14
CN102687202B (zh) 2014-01-15
WO2011084906A1 (en) 2011-07-14
US8107285B2 (en) 2012-01-31
TW201203239A (en) 2012-01-16
TWI505268B (zh) 2015-10-21
GB201211967D0 (en) 2012-08-15
JP5744912B2 (ja) 2015-07-08
KR20120125229A (ko) 2012-11-14
JP2013516726A (ja) 2013-05-13
GB2489360A (en) 2012-09-26
GB2489360B (en) 2015-05-20

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Legal Events

Date Code Title Description
R012 Request for examination validly filed

Effective date: 20120615

R016 Response to examination communication
R016 Response to examination communication
R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, NY, US

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONK, N.Y., US

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

Owner name: GLOBALFOUNDRIES INC., KY

Free format text: FORMER OWNER: GLOBALFOUNDRIES US 2 LLC (N.D.GES.DES STAATES DELAWARE), HOPEWELL JUNCTION, N.Y., US

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R016 Response to examination communication
R081 Change of applicant/patentee

Owner name: GLOBALFOUNDRIES U.S. INC., SANTA CLARA, US

Free format text: FORMER OWNER: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

R082 Change of representative

Representative=s name: RICHARDT PATENTANWAELTE PARTG MBB, DE

R082 Change of representative

Representative=s name: GRUENECKER PATENT- UND RECHTSANWAELTE PARTG MB, DE

R120 Application withdrawn or ip right abandoned