JP2013516726A5 - - Google Patents
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- Publication number
- JP2013516726A5 JP2013516726A5 JP2012548058A JP2012548058A JP2013516726A5 JP 2013516726 A5 JP2013516726 A5 JP 2013516726A5 JP 2012548058 A JP2012548058 A JP 2012548058A JP 2012548058 A JP2012548058 A JP 2012548058A JP 2013516726 A5 JP2013516726 A5 JP 2013516726A5
- Authority
- JP
- Japan
- Prior art keywords
- mtj element
- current
- magnetic storage
- mtj
- resistance state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/684,510 US8107285B2 (en) | 2010-01-08 | 2010-01-08 | Read direction for spin-torque based memory device |
| US12/684,510 | 2010-01-08 | ||
| PCT/US2011/020011 WO2011084906A1 (en) | 2010-01-08 | 2011-01-03 | Read direction for spin-torque based memory device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014142257A Division JP2014209405A (ja) | 2010-01-08 | 2014-07-10 | スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013516726A JP2013516726A (ja) | 2013-05-13 |
| JP2013516726A5 true JP2013516726A5 (https=) | 2013-10-03 |
| JP5744912B2 JP5744912B2 (ja) | 2015-07-08 |
Family
ID=44258409
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012548058A Expired - Fee Related JP5744912B2 (ja) | 2010-01-08 | 2011-01-03 | スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム |
| JP2014142257A Pending JP2014209405A (ja) | 2010-01-08 | 2014-07-10 | スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014142257A Pending JP2014209405A (ja) | 2010-01-08 | 2014-07-10 | スピントルク・ベースのメモリ装置、その動作方法、及び、プログラム |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8107285B2 (https=) |
| JP (2) | JP5744912B2 (https=) |
| KR (1) | KR20120125229A (https=) |
| CN (1) | CN102687202B (https=) |
| DE (1) | DE112011100085T5 (https=) |
| GB (1) | GB2489360B (https=) |
| TW (1) | TWI505268B (https=) |
| WO (1) | WO2011084906A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012243364A (ja) * | 2011-05-20 | 2012-12-10 | Fujitsu Ltd | 磁気メモリデバイスの駆動方法及び磁気メモリデバイス |
| US20130028010A1 (en) * | 2011-07-29 | 2013-01-31 | Qualcomm Incorporated | Fast MTJ Switching Write Circuit For MRAM Array |
| KR102124209B1 (ko) | 2014-04-14 | 2020-06-18 | 삼성전자주식회사 | 반도체 메모리 장치 |
| US10311928B2 (en) | 2015-10-15 | 2019-06-04 | Samsung Electronics Co., Ltd. | Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3920565B2 (ja) * | 2000-12-26 | 2007-05-30 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| US7474557B2 (en) | 2001-06-29 | 2009-01-06 | International Business Machines Corporation | MRAM array and access method thereof |
| US6646911B2 (en) * | 2001-10-26 | 2003-11-11 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device having data read current tuning function |
| JP2004013961A (ja) * | 2002-06-04 | 2004-01-15 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| JP4626253B2 (ja) * | 2004-10-08 | 2011-02-02 | ソニー株式会社 | 記憶装置 |
| JP4883982B2 (ja) * | 2005-10-19 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
| US7286395B2 (en) | 2005-10-27 | 2007-10-23 | Grandis, Inc. | Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells |
| DE602006013948D1 (de) * | 2006-05-04 | 2010-06-10 | Hitachi Ltd | Magnetspeichervorrichtung |
| JP5076361B2 (ja) * | 2006-05-18 | 2012-11-21 | 株式会社日立製作所 | 半導体装置 |
| US7379327B2 (en) | 2006-06-26 | 2008-05-27 | Grandis, Inc. | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins |
| JP4250644B2 (ja) * | 2006-08-21 | 2009-04-08 | 株式会社東芝 | 磁気記憶素子およびこの磁気記憶素子を備えた磁気メモリならびに磁気メモリの駆動方法 |
| TWI317125B (en) * | 2006-12-27 | 2009-11-11 | Macronix Int Co Ltd | Structure of magnetic random access memory using spin-torque transfer writing and method for manufacturing same |
| US8004880B2 (en) | 2007-03-06 | 2011-08-23 | Qualcomm Incorporated | Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory |
| US7764537B2 (en) | 2007-04-05 | 2010-07-27 | Qualcomm Incorporated | Spin transfer torque magnetoresistive random access memory and design methods |
| US7825445B2 (en) | 2007-11-29 | 2010-11-02 | Seagate Technology Llc | Magnetoresistive memory elements with separate read and write current paths |
| US7919794B2 (en) | 2008-01-08 | 2011-04-05 | Qualcomm, Incorporated | Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell |
-
2010
- 2010-01-08 US US12/684,510 patent/US8107285B2/en active Active
-
2011
- 2011-01-03 JP JP2012548058A patent/JP5744912B2/ja not_active Expired - Fee Related
- 2011-01-03 DE DE112011100085T patent/DE112011100085T5/de not_active Withdrawn
- 2011-01-03 KR KR1020127013302A patent/KR20120125229A/ko not_active Ceased
- 2011-01-03 WO PCT/US2011/020011 patent/WO2011084906A1/en not_active Ceased
- 2011-01-03 GB GB1211967.3A patent/GB2489360B/en not_active Expired - Fee Related
- 2011-01-03 CN CN201180005111.6A patent/CN102687202B/zh active Active
- 2011-01-05 TW TW100100413A patent/TWI505268B/zh active
-
2014
- 2014-07-10 JP JP2014142257A patent/JP2014209405A/ja active Pending
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