JP5743412B2 - 発光素子パッケージ - Google Patents

発光素子パッケージ Download PDF

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Publication number
JP5743412B2
JP5743412B2 JP2010052565A JP2010052565A JP5743412B2 JP 5743412 B2 JP5743412 B2 JP 5743412B2 JP 2010052565 A JP2010052565 A JP 2010052565A JP 2010052565 A JP2010052565 A JP 2010052565A JP 5743412 B2 JP5743412 B2 JP 5743412B2
Authority
JP
Japan
Prior art keywords
lead frame
housing
light emitting
emitting device
device package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010052565A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010212691A (ja
Inventor
キム，キバム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090020064A external-priority patent/KR101047603B1/ko
Priority claimed from KR1020100020041A external-priority patent/KR20110100941A/ko
Priority claimed from KR1020100020043A external-priority patent/KR20110100943A/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2010212691A publication Critical patent/JP2010212691A/ja
Application granted granted Critical
Publication of JP5743412B2 publication Critical patent/JP5743412B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)
JP2010052565A 2009-03-10 2010-03-10 発光素子パッケージ Active JP5743412B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR1020090020064A KR101047603B1 (ko) 2009-03-10 2009-03-10 발광 소자 패키지 및 그 제조방법
KR10-2009-0020064 2009-03-10
KR10-2010-0020043 2010-03-05
KR10-2010-0020041 2010-03-05
KR1020100020041A KR20110100941A (ko) 2010-03-05 2010-03-05 발광 소자 패키지
KR1020100020043A KR20110100943A (ko) 2010-03-05 2010-03-05 발광 소자 패키지

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015091431A Division JP2015159321A (ja) 2009-03-10 2015-04-28 発光素子パッケージ

Publications (2)

Publication Number Publication Date
JP2010212691A JP2010212691A (ja) 2010-09-24
JP5743412B2 true JP5743412B2 (ja) 2015-07-01

Family

ID=42288676

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010052565A Active JP5743412B2 (ja) 2009-03-10 2010-03-10 発光素子パッケージ
JP2015091431A Pending JP2015159321A (ja) 2009-03-10 2015-04-28 発光素子パッケージ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015091431A Pending JP2015159321A (ja) 2009-03-10 2015-04-28 発光素子パッケージ

Country Status (3)

Country Link
US (3) US8610156B2 (enExample)
EP (1) EP2228843B1 (enExample)
JP (2) JP5743412B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610156B2 (en) * 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
JP5516987B2 (ja) * 2010-10-13 2014-06-11 東芝ライテック株式会社 発光装置および照明器具
USD661262S1 (en) * 2009-10-26 2012-06-05 Nichia Corporation Light emitting diode
US8598612B2 (en) 2010-03-30 2013-12-03 Micron Technology, Inc. Light emitting diode thermally enhanced cavity package and method of manufacture
CN102903803B (zh) * 2011-07-29 2015-03-25 展晶科技(深圳)有限公司 发光二极管封装结构的形成方法及其基座的形成方法
CN103427006B (zh) * 2012-05-14 2016-02-10 展晶科技(深圳)有限公司 发光二极管
US9590158B2 (en) * 2014-12-22 2017-03-07 Nichia Corporation Light emitting device
KR102528014B1 (ko) * 2015-11-27 2023-05-10 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 조명 장치

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3942245A (en) 1971-11-20 1976-03-09 Ferranti Limited Related to the manufacture of lead frames and the mounting of semiconductor devices thereon
JPS60220956A (ja) 1985-03-06 1985-11-05 Hitachi Ltd 樹脂封止型半導体装置
JPS63102247A (ja) * 1986-10-17 1988-05-07 Hitachi Cable Ltd 樹脂封止型半導体装置
JPH01305551A (ja) * 1988-06-03 1989-12-08 Kobe Steel Ltd 半導体装置用リードフレームおよび半導体装置
US5859471A (en) 1992-11-17 1999-01-12 Shinko Electric Industries Co., Ltd. Semiconductor device having tab tape lead frame with reinforced outer leads
JPH0672261U (ja) * 1993-03-19 1994-10-07 ローム株式会社 Ｌｅｄランプ
JP3127098B2 (ja) * 1995-05-31 2001-01-22 シャープ株式会社 リードフレームおよびこれを用いた半導体装置
JPH10303352A (ja) * 1997-04-22 1998-11-13 Toshiba Corp 半導体装置および半導体装置の製造方法
EP1004145B1 (de) * 1997-07-29 2005-06-01 Osram Opto Semiconductors GmbH Optoelektronisches bauelement
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes
DE19829197C2 (de) * 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
JP3895086B2 (ja) * 1999-12-08 2007-03-22 ローム株式会社 チップ型半導体発光装置
JP2002134360A (ja) 2000-10-24 2002-05-10 Matsushita Electric Ind Co Ltd 固体電解コンデンサおよびその製造方法
JP2002299540A (ja) 2001-04-04 2002-10-11 Hitachi Ltd 半導体装置およびその製造方法
JP2002314143A (ja) 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP4813691B2 (ja) * 2001-06-06 2011-11-09 シチズン電子株式会社 発光ダイオード
US6812503B2 (en) * 2001-11-29 2004-11-02 Highlink Technology Corporation Light-emitting device with improved reliability
US6936855B1 (en) 2002-01-16 2005-08-30 Shane Harrah Bendable high flux LED array
AU2003211644A1 (en) 2002-03-08 2003-09-22 Rohm Co., Ltd. Semiconductor device using semiconductor chip
AU2003221442A1 (en) * 2002-03-22 2003-10-08 Nichia Corporation Nitride phosphor and method for preparation thereof, and light emitting device
JP2004047748A (ja) * 2002-07-12 2004-02-12 Stanley Electric Co Ltd 発光ダイオード
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
DE10243247A1 (de) * 2002-09-17 2004-04-01 Osram Opto Semiconductors Gmbh Leadframe-basiertes Bauelement-Gehäuse, Leadframe-Band, oberflächenmontierbares elektronisches Bauelement und Verfahren zur Herstellung
JP2004172160A (ja) 2002-11-15 2004-06-17 Denso Corp 発光素子
TW200410377A (en) 2002-12-02 2004-06-16 Shen Yu Nung Semiconductor chip package and the packaging method
JP3897704B2 (ja) 2003-01-16 2007-03-28 松下電器産業株式会社 リードフレーム
JP4242194B2 (ja) * 2003-04-10 2009-03-18 シャープ株式会社 半導体発光装置およびその製造方法
KR20050003226A (ko) 2003-06-30 2005-01-10 삼성테크윈 주식회사 반도체 팩키지용 리드프레임의 선도금 방법
JP2005197329A (ja) * 2004-01-05 2005-07-21 Stanley Electric Co Ltd 表面実装型半導体装置及びそのリードフレーム構造
EP1716732A2 (en) 2004-01-21 2006-11-02 Enthone, Incorporated Tin-based coating of electronic component
KR100592328B1 (ko) 2004-02-26 2006-06-21 주식회사 코스텍시스 발광다이오드 모듈의 제조방법 및 발광다이오드 모듈
TWI244226B (en) 2004-11-05 2005-11-21 Chen Jen Shian Manufacturing method of flip-chip light-emitting device
KR100665298B1 (ko) * 2004-06-10 2007-01-04 서울반도체 주식회사 발광장치
US7659548B2 (en) 2004-06-22 2010-02-09 Konica Minolta Holdings, Inc. White light emitting diode and method of manufacturing the same
JP2006049691A (ja) * 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 半導体パッケージ，その製造方法及び半導体デバイス
KR100867970B1 (ko) 2004-10-04 2008-11-11 가부시끼가이샤 도시바 발광 장치 및 그것을 이용한 조명 기구 또는 액정표시장치
KR20060030356A (ko) 2004-10-05 2006-04-10 삼성테크윈 주식회사 반도체 리이드 프레임과, 이를 포함하는 반도체 패키지와,이를 도금하는 방법
US7916452B2 (en) 2004-11-25 2011-03-29 Panasonic Corporation Method of producing a coin-type electrochemical element
JP4624170B2 (ja) 2005-04-25 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20100131500A (ko) * 2005-09-22 2010-12-15 미쓰비시 가가꾸 가부시키가이샤 반도체 발광 디바이스용 부재 및 그 제조 방법, 및 그것을 이용한 반도체 발광 디바이스
US20070096133A1 (en) * 2005-11-02 2007-05-03 Lee Kian S System and method for LED manufacturing
EP1795496A2 (en) 2005-12-08 2007-06-13 Yamaha Corporation Semiconductor device for detecting pressure variations
KR100723144B1 (ko) 2005-12-24 2007-05-30 삼성전기주식회사 발광다이오드 패키지
KR100723247B1 (ko) 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 ｌｅｄ 패키지 및 그 제조방법
KR100760075B1 (ko) 2006-01-26 2007-09-18 엘지전자 주식회사 발광 소자 패키지 및 그의 제조 방법
KR100729439B1 (ko) 2006-03-23 2007-06-15 (주)싸이럭스 발광소자 패키지 구조체와 그 제조방법 및 이를 적용한발광소자의 제조방법
JP5068472B2 (ja) 2006-04-12 2012-11-07 昭和電工株式会社 発光装置の製造方法
JP4830768B2 (ja) 2006-05-10 2011-12-07 日亜化学工業株式会社 半導体発光装置及び半導体発光装置の製造方法
US20070295969A1 (en) * 2006-06-26 2007-12-27 Tong-Fatt Chew LED device having a top surface heat dissipator
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
JP5205724B2 (ja) * 2006-08-04 2013-06-05 日亜化学工業株式会社 発光装置
KR100817274B1 (ko) 2006-08-21 2008-03-27 삼성전기주식회사 발광 다이오드 패키지 및 그 제조방법
WO2008038997A1 (en) 2006-09-27 2008-04-03 Seoul Semiconductor Co., Ltd. Light emitting diode package employing leadframe with plated layer of high brightness
TWI338380B (en) * 2006-10-11 2011-03-01 Chuan Yu Hung Light emitting diode incorporating high refractive index material
KR101274043B1 (ko) 2007-03-29 2013-06-12 서울반도체 주식회사 발광 다이오드
JP5060172B2 (ja) 2007-05-29 2012-10-31 岩谷産業株式会社 半導体発光装置
KR100811723B1 (ko) * 2007-03-30 2008-03-11 서울반도체 주식회사 Ｌｅｄ 패키지
KR101318969B1 (ko) 2007-03-30 2013-10-17 서울반도체 주식회사 발광 다이오드
JP5242939B2 (ja) * 2007-04-19 2013-07-24 スタンレー電気株式会社 光デバイス
TW200847478A (en) * 2007-05-30 2008-12-01 I Chiun Precision Ind Co Ltd Light-emitting diode lead frame and manufacture method thereof
KR100801621B1 (ko) 2007-06-05 2008-02-11 서울반도체 주식회사 Ｌｅｄ 패키지
DE202007012162U1 (de) 2007-06-05 2008-03-20 Seoul Semiconductor Co., Ltd. LED-Gehäuse
KR20090003378A (ko) 2007-06-05 2009-01-12 주식회사 루멘스 발광 다이오드 패키지
US7911059B2 (en) 2007-06-08 2011-03-22 SeniLEDS Optoelectronics Co., Ltd High thermal conductivity substrate for a semiconductor device
US7956469B2 (en) * 2007-07-27 2011-06-07 Nichia Corporation Light emitting device and method of manufacturing the same
US7737546B2 (en) * 2007-09-05 2010-06-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Surface mountable semiconductor package with solder bonding features
US8049230B2 (en) * 2008-05-16 2011-11-01 Cree Huizhou Opto Limited Apparatus and system for miniature surface mount devices
JP2009289974A (ja) * 2008-05-29 2009-12-10 Toshiba Corp 半導体装置の製造方法
KR101485319B1 (ko) * 2008-06-30 2015-01-22 서울반도체 주식회사 발광 장치
WO2010035944A2 (ko) * 2008-09-29 2010-04-01 서울반도체 주식회사 발광 장치
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
US8368112B2 (en) * 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
TWI393275B (zh) * 2009-02-04 2013-04-11 億光電子工業股份有限公司 發光二極體封裝體及其製造方法
US8610156B2 (en) * 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
JP5778999B2 (ja) * 2010-08-06 2015-09-16 日亜化学工業株式会社 発光装置および画像表示ユニット

Also Published As

Publication number Publication date
US20150123163A1 (en) 2015-05-07
US20140084330A1 (en) 2014-03-27
JP2010212691A (ja) 2010-09-24
US20100230710A1 (en) 2010-09-16
EP2228843B1 (en) 2017-10-18
EP2228843A3 (en) 2011-05-25
US8987775B2 (en) 2015-03-24
JP2015159321A (ja) 2015-09-03
US8610156B2 (en) 2013-12-17
EP2228843A2 (en) 2010-09-15
US9318677B2 (en) 2016-04-19

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