JP2006049691A - 半導体パッケージ,その製造方法及び半導体デバイス - Google Patents
半導体パッケージ,その製造方法及び半導体デバイス Download PDFInfo
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- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】半導体デバイス1は、半導体チップ11と、半導体チップ11と外部機器との信号の授受を行なうためのリード12と、金属細線17と、リード12を封止する封止体13と、蓋部材15とを備えている。リード12の表面上には、酸化処理による金属酸化膜20が形成されている。この酸化膜の厚みは、自然酸化膜よりは大きく80nm以下の範囲である。
【選択図】 図1
Description
図4(a),(b)は、接着力の測定に用いた装置の概略構造を示す斜視図及び断面図である。図4(a)に示すように、リードフレームを構成する金属板の表面に種々の厚みを有する金属酸化膜を形成してなる被着体の上にモールドを行なってタワー状の成型品を形成している。そして、図4(b)に示すように、被着体及び成型品をホットプレート状に設置して、固定部材に被着体の左端を当接させた状態で、曲げ部材により成型品に曲げ荷重を加え、このときの荷重から密着力を測定した。
次に、本発明においてリード−モールド樹脂間の密着力(接着力)の強化のメカニズムについて、考え得る理由を説明する。
2 半導体パッケージ
11 半導体チップ
12 リード
13 封止体
15 蓋部材
17 金属細線
30 リードフレーム
30a インナーリード
30b アウターリード
30c ダムバー
Claims (7)
- 半導体チップと外部機器との間で信号を授受するための複数のリードと、少なくとも上記複数のリードの各一部を封止する封止体とを有する半導体パッケージにおいて、
上記各リードの表面上には、厚さが1.7nm以上で80nm以下である金属酸化膜が形成されている,半導体パッケージ。 - 請求項1記載の半導体パッケージにおいて、
上記金属酸化膜の厚みは10nm以下である,半導体パッケージ。 - 半導体チップと、半導体チップと外部機器との間で信号を授受するための複数のリードと、上記半導体デバイスの一部と上記各リードとを電気的に接続する接続部材と、少なくとも上記複数のリードの各一部を封止する封止体とを有する半導体デバイスにおいて、
上記各リードの表面上には、厚さが1.7nm以上で80nm以下である金属酸化膜が形成されている,半導体デバイス。 - 請求項3記載の半導体デバイスにおいて、
上記金属酸化膜の厚みは10nm以下である,半導体デバイス。 - フレーム本体と、基端がフレーム本体に接続され先端が半導体チップ設置領域に対峙する複数のリードとを有するリードフレームを準備する工程(a)と、
上記リードフレームを酸化処理することにより、厚さが1.7nm以上で80nm以下である金属酸化膜をリードフレームの表面上に形成する工程(b)と、
モールド材料により、上記複数のリードの各一部をモールドして、封止体を形成する工程(c)と
を含む半導体パッケージの製造方法。 - 請求項5記載の半導体パッケージの製造方法において、
上記工程(b)では、酸素濃度20%±5%の雰囲気中で、リードフレームを200℃〜260℃の範囲に1時間保持する,半導体パッケージの製造方法。 - 請求項5又は6記載の半導体パッケージの製造方法において、
上記工程(b)では、厚み10nm以下の金属酸化膜を形成する,半導体パッケージの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004230718A JP2006049691A (ja) | 2004-08-06 | 2004-08-06 | 半導体パッケージ,その製造方法及び半導体デバイス |
KR20050064028A KR20060050200A (ko) | 2004-08-06 | 2005-07-15 | 반도체패키지, 그 제조방법 및 반도체디바이스 |
CNA2005100859571A CN1731580A (zh) | 2004-08-06 | 2005-07-21 | 半导体封装体、其制造方法及半导体器件 |
US11/196,321 US7402898B2 (en) | 2004-08-06 | 2005-08-04 | Semiconductor package, method for fabricating the same, and semiconductor device |
TW094126861A TW200606999A (en) | 2004-08-06 | 2005-08-08 | Semiconductor package, method for fabricating the same, and semiconductor device |
US12/213,757 US20080293190A1 (en) | 2004-08-06 | 2008-06-24 | Semiconductor package, method for fabricating the same, and semiconductor device |
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JP2004230718A JP2006049691A (ja) | 2004-08-06 | 2004-08-06 | 半導体パッケージ,その製造方法及び半導体デバイス |
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JP2006049691A true JP2006049691A (ja) | 2006-02-16 |
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JP2004230718A Withdrawn JP2006049691A (ja) | 2004-08-06 | 2004-08-06 | 半導体パッケージ,その製造方法及び半導体デバイス |
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Country | Link |
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US (2) | US7402898B2 (ja) |
JP (1) | JP2006049691A (ja) |
KR (1) | KR20060050200A (ja) |
CN (1) | CN1731580A (ja) |
TW (1) | TW200606999A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009260280A (ja) * | 2008-03-21 | 2009-11-05 | Sumitomo Chemical Co Ltd | 樹脂パッケージ及びその製造方法 |
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US9502624B2 (en) | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
US8561456B2 (en) * | 2008-09-12 | 2013-10-22 | The Boeing Company | Fluid detection with a spectrometer-on-a-chip |
US8610156B2 (en) * | 2009-03-10 | 2013-12-17 | Lg Innotek Co., Ltd. | Light emitting device package |
KR101047603B1 (ko) * | 2009-03-10 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 그 제조방법 |
US8193620B2 (en) * | 2010-02-17 | 2012-06-05 | Analog Devices, Inc. | Integrated circuit package with enlarged die paddle |
US20180261535A1 (en) * | 2014-12-15 | 2018-09-13 | Bridge Semiconductor Corp. | Method of making wiring board with dual routing circuitries integrated with leadframe |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS62200752A (ja) * | 1986-02-28 | 1987-09-04 | Sumitomo Electric Ind Ltd | 樹脂封止用リ−ドフレ−ムの製造方法 |
JPH0955489A (ja) | 1995-08-11 | 1997-02-25 | Sony Corp | 固体撮像装置 |
CA2232843C (en) * | 1997-03-25 | 2002-03-12 | Koichi Haruta | Plastic package, semiconductor device, and method of manufacturing plastic package |
JPH10303352A (ja) * | 1997-04-22 | 1998-11-13 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
DE10148120B4 (de) * | 2001-09-28 | 2007-02-01 | Infineon Technologies Ag | Elektronische Bauteile mit Halbleiterchips und ein Systemträger mit Bauteilpositionen sowie Verfahren zur Herstellung eines Systemträgers |
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2004
- 2004-08-06 JP JP2004230718A patent/JP2006049691A/ja not_active Withdrawn
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2005
- 2005-07-15 KR KR20050064028A patent/KR20060050200A/ko not_active Application Discontinuation
- 2005-07-21 CN CNA2005100859571A patent/CN1731580A/zh active Pending
- 2005-08-04 US US11/196,321 patent/US7402898B2/en not_active Expired - Fee Related
- 2005-08-08 TW TW094126861A patent/TW200606999A/zh unknown
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009260280A (ja) * | 2008-03-21 | 2009-11-05 | Sumitomo Chemical Co Ltd | 樹脂パッケージ及びその製造方法 |
KR101577453B1 (ko) * | 2008-03-21 | 2015-12-14 | 스미또모 가가꾸 가부시끼가이샤 | 수지 패키지 및 그 제조 방법 |
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