JP5728636B2 - 導電性接着剤、及びそれを用いた回路基板、電子部品モジュール - Google Patents
導電性接着剤、及びそれを用いた回路基板、電子部品モジュール Download PDFInfo
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- JP5728636B2 JP5728636B2 JP2011169966A JP2011169966A JP5728636B2 JP 5728636 B2 JP5728636 B2 JP 5728636B2 JP 2011169966 A JP2011169966 A JP 2011169966A JP 2011169966 A JP2011169966 A JP 2011169966A JP 5728636 B2 JP5728636 B2 JP 5728636B2
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- solder
- conductive adhesive
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- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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Description
10〜90wt%のSnBi系はんだ粉末と、残部がエポキシ樹脂、硬化剤、及び有機酸を含有する接着剤とを含む導電性接着剤であって、
前記SnBi系はんだ粉末は、粒子径L1が20〜30μmのはんだ粒子と、粒子径L2が8〜12μmのはんだ粒子から構成されており、
前記SnBi系はんだ粉末の混合割合は、前記粒子径が20〜30μmのはんだ粒子がはんだ粉末全体の40〜90wt%で、残部が8〜12μmのはんだ粒子である、導電性接着剤である。
10〜90wt%のSnBi系はんだ粉末と、残部がエポキシ樹脂、硬化剤、及び有機酸を含有する接着剤とを含む導電性接着剤であって、
前記SnBi系はんだ粉末は、粒子径L1が20〜30μmのはんだ粒子と、粒子径L2が8〜12μmのはんだ粒子から構成されており、
前記SnBi系はんだ粉末の混合割合は、前記粒子径が20〜30μmのはんだ粒子がはんだ粉末全体の60〜80wt%で、残部が8〜12μmのはんだ粒子である、導電性接着剤である。
前記有機酸は、アジピン酸とグルタル酸を含むものである、上記第1または第2の本発明の導電性接着剤である。
前記アジピン酸と前記グルタル酸の割合は、前記アジピン酸が10〜50wt%で、残部が前記グルタル酸である、上記第3の本発明の導電性接着剤である。
前記アジピン酸と前記グルタル酸の割合は、前記アジピン酸が20〜40wt%で、残部が前記グルタル酸である、上記第4の本発明の導電性接着剤である。
前記有機酸の粒度分布において、粒子径が10μm以下の粒子量が、前記有機酸の粒子全体の中で5〜70%含まれている、上記第3から第5の何れか一つの本発明の導電性接着剤である。
前記SnBi系はんだ粉末は、Sn42/Bi58、Sn42/Bi57/Ag1.0、または、Sn16/Bi56/In28である、上記第1から第6の何れか一つの本発明の導電性接着剤である。
10〜90wt%のSnBi系はんだ粉末と、残部が有機酸を含有する接着剤とを含む導電性接着剤であって、
前記SnBi系はんだ粉末は、粒子径L1が20〜30μmのはんだ粒子と、粒子径L2が8〜12μmのはんだ粒子から構成されており、
前記SnBi系はんだ粉末の混合割合は、前記粒子径が20〜30μmのはんだ粒子がはんだ粉末全体の60〜80wt%で、残部が8〜12μmのはんだ粒子であり、
前記有機酸を含有する接着剤は、少なくともエポキシ樹脂、硬化剤、前記有機酸、及び増粘剤から構成されており、
前記有機酸は、アジピン酸とグルタル酸を含むものであり、
前記アジピン酸と前記グルタル酸の割合は、前記アジピン酸が有機酸全体の20〜40wt%で、残部が前記グルタル酸である、導電性接着剤である。
前記粒子径L2は、前記粒子径L1の0.4倍である、上記第1、第2、第8の何れか一つの本発明の導電性接着剤である。
基材と、
前記基材上に、上記第1から第7の何れか一つの本発明の導電性接着剤を用いて形成された導電部と、
を備えた回路基板である。
回路基板と、
前記回路基板上に、上記第1から第7の何れか一つの本発明の導電性接着剤を用いて形成された導電部と、
前記導電部を介して前記回路基板上に実装された電子部品と、
を備えた、電子部品モジュールである。
(1)導電性接着剤の材料調整
a)はんだ粒子:下記のはんだ粒子No.1とNo.2を混合して使用した。
商品名:Sn/Bi58 (20-30)(三井金属鉱業株式会社製)
a−2)SnBi系はんだ粒子No.2(粒子径8〜12μm)
商品名:Sn/Bi58(DS10)(三井金属鉱業株式会社製)
なお、ここでの粒子径は、1つの粒子が真球の場合では直径を示すが、その他の形状の場合では、その形状の外接直方体の最大の長さを示すこととする。
b)エポキシ樹脂:
b−1)ビスフェノールA型エポキシ樹脂
商品名:エピコートYL980(ジャパンエポキシレジン株式会社製)
b−2)ビスフェノールF型エポキシ樹脂
商品名:エピコート806(ジャパンエポキシレジン株式会社製)
c)硬化剤:
イミダゾール系硬化剤(10μm以下の粉体)
商品名:2P4MHZ(2−フェニル−4−メチル―5−ヒドロキシメチルイミダゾール:四国化成工業株式会社製)
d)有機酸:
d−1)アジピン酸(関東化学株式会社製)
d−2)グルタル酸(関東化学株式会社製)
e)増粘剤:ジベンジリデンソルビトール
商品名:ゲルオールD(新日本理化株式会社製)
以上の材料を用いて、有機酸を含有する接着剤とSnBi系はんだ粉末から構成される導電性接着剤に関して、以下の処方にて作成した。
(2)印刷性能の評価方法
印刷性能に関しては、下記方法にて評価を実施した。
第1メタルマスク及び第2メタルマスクを用いた印刷結果において、共にブリッジが発生しなかった場合に◎印(合格を意味する印)を付した。また、第1メタルマスクを用いた印刷結果においてのみ、ブリッジが発生しなかった場合に○印(合格を意味する印)を付した(第2メタルマスクを用いた印刷結果においてのみ、ブリッジが発生した。)。
第1メタルマスク及び第2メタルマスクを用いた印刷結果において、共にカケが発生しなかった場合に◎印(合格を意味する印)を付した。また、第1メタルマスクを用いた印刷結果においてのみ、カケが発生しなかった場合に○印(合格を意味する印)を付した(第2メタルマスクを用いた印刷結果においてのみ、カケが発生した。)。
上記の2つの項目a)とb)の評価結果が、共に○印の場合には、印刷性能の評価として○印を付し、合格と判断した。また、上記の2つの項目a)とb)の評価結果が、共に◎印の場合には、印刷性能の評価として◎印を付し、○印より更にファインピッチの印刷が可能であると判断した。また、上記の2つの項目a)とb)の評価結果が、ひとつでも×印の場合には、印刷性能の評価として×印を付した。
(3)はんだ凝集性評価(凝集性評価)
JIS Z3197に則り、開口の大きさの異なる2種類のメタルマスクとして、第3メタルマスク(開口のサイズがφ0.3mm又は□0.3mmである)と第4メタルマスク(開口のサイズがφ0.1mm又は□0.1mmである)を用いて、はんだセラミック基板上でのはんだボールの発生量について調べた。
(4)スキージライフ評価(導電性接着剤の粘度測定方法)
E型粘度計を用い、25℃の雰囲気で、0.5rpm、5rpmでロータを回転させたときの粘度を測定した。また、このときの5rpmの粘度の値を代表値とした。
実施の形態1では、SnBi系はんだ粉末の粒子径と混合割合について検討した。
実施の形態2では、有機酸を含有する接着剤を構成する有機酸について検討する。有機酸としては、アジピン酸(融点:152℃)とグルタル酸(97℃)で検討した。
実施の形態3では、有機酸を含有する接着剤を構成する有機酸の粒子の大きさについて検討する。
実施の形態4では、SnBi系はんだの合金組成について検討する。
実施の形態5では、本発明の導電性接着剤を用いて導電部を形成することを検討した。
実施の形態6では、本発明の導電性接着剤を用いて多層回路基板を形成することを検討した。
実施の形態7では、本発明の導電性接着剤を用いて電子部品モジュールを接合し、形成することを検討した。
E はんだ粒子No.2
L1 はんだ粒子No.1の直径
L2 はんだ粒子No.2の直径
L3 はんだ粒子No.1の粒子間距離
1、10 基材
2 導電性接着剤
3 メタルマスク
4 スキージ
5 熱
6 貫通孔
7、20、30 回路パターン
8 電子回路基板
9 電子部品
100 隙間(樹脂)
Claims (11)
- 10〜90wt%のSnBi系はんだ粉末と、残部がエポキシ樹脂、硬化剤、及び有機酸を含有する接着剤とを含む導電性接着剤であって、
前記SnBi系はんだ粉末は、粒子径L1が20〜30μmのはんだ粒子と、粒子径L2が8〜12μmのはんだ粒子から構成されており、
前記SnBi系はんだ粉末の混合割合は、前記粒子径が20〜30μmのはんだ粒子がはんだ粉末全体の40〜90wt%で、残部が8〜12μmのはんだ粒子である、導電性接着剤。 - 10〜90wt%のSnBi系はんだ粉末と、残部がエポキシ樹脂、硬化剤、及び有機酸を含有する接着剤とを含む導電性接着剤であって、
前記SnBi系はんだ粉末は、粒子径L1が20〜30μmのはんだ粒子と、粒子径L2が8〜12μmのはんだ粒子から構成されており、
前記SnBi系はんだ粉末の混合割合は、前記粒子径が20〜30μmのはんだ粒子がはんだ粉末全体の60〜80wt%で、残部が8〜12μmのはんだ粒子である、導電性接着剤。 - 前記有機酸は、アジピン酸とグルタル酸を含むものである、請求項1または2に記載の導電性接着剤。
- 前記アジピン酸と前記グルタル酸の割合は、前記アジピン酸が10〜50wt%で、残部が前記グルタル酸である、請求項3に記載の導電性接着剤。
- 前記アジピン酸と前記グルタル酸の割合は、前記アジピン酸が20〜40wt%で、残部が前記グルタル酸である、請求項4に記載の導電性接着剤。
- 前記有機酸の粒度分布において、粒子径が10μm以下の粒子量が、前記有機酸の粒子全体の中で5〜70%含まれている、請求項3から請求項5の何れか一つに記載の導電性接着剤。
- 前記SnBi系はんだ粉末は、Sn42/Bi58、Sn42/Bi57/Ag1.0、または、Sn16/Bi56/In28である、請求項1から請求項6の何れか一つに記載の導電性接着剤。
- 10〜90wt%のSnBi系はんだ粉末と、残部が有機酸を含有する接着剤とを含む導電性接着剤であって、
前記SnBi系はんだ粉末は、粒子径L1が20〜30μmのはんだ粒子と、粒子径L2が8〜12μmのはんだ粒子から構成されており、
前記SnBi系はんだ粉末の混合割合は、前記粒子径が20〜30μmのはんだ粒子がはんだ粉末全体の60〜80wt%で、残部が8〜12μmのはんだ粒子であり、
前記有機酸を含有する接着剤は、少なくともエポキシ樹脂、硬化剤、前記有機酸、及び増粘剤から構成されており、
前記有機酸は、アジピン酸とグルタル酸を含むものであり、
前記アジピン酸と前記グルタル酸の割合は、前記アジピン酸が有機酸全体の20〜40wt%で、残部が前記グルタル酸である、導電性接着剤。 - 前記粒子径L2は、前記粒子径L1の0.4倍である、請求項1、2、8の何れか一つに記載の導電性接着剤。
- 基材と、
前記基材上に、請求項1から請求項7の何れか一つに記載の導電性接着剤を用いて形成された導電部と、
を備えた回路基板。 - 回路基板と、
前記回路基板上に、請求項1から請求項7の何れか一つに記載の導電性接着剤を用いて形成された導電部と、
前記導電部を介して前記回路基板上に実装された電子部品と、
を備えた、電子部品モジュール。
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JP2011169966A JP5728636B2 (ja) | 2010-09-29 | 2011-08-03 | 導電性接着剤、及びそれを用いた回路基板、電子部品モジュール |
US13/240,043 US8940198B2 (en) | 2010-09-29 | 2011-09-22 | Conductive adhesive, and circuit board and electronic component module using the same |
KR1020110097273A KR101747242B1 (ko) | 2010-09-29 | 2011-09-27 | 도전성 접착제 및 이를 이용한 회로기판, 전자부품 모듈 |
CN201110307756.7A CN102559114B (zh) | 2010-09-29 | 2011-09-28 | 导电性粘合剂、使用该导电性粘合剂的电路基板及电子部件组件 |
TW100134969A TWI507493B (zh) | 2010-09-29 | 2011-09-28 | 導電性接著劑及使用其之電路基板、電子零件模組 |
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JP3254626B2 (ja) * | 1997-09-22 | 2002-02-12 | 住友ベークライト株式会社 | 導電性樹脂ペースト及びこれを用いた半導体装置 |
DE60221872T2 (de) * | 2001-10-26 | 2008-05-08 | Miyazaki Prefecture | Kugelförmiges monodisperses metallteilchen |
CN100551604C (zh) * | 2004-09-13 | 2009-10-21 | 松下电器产业株式会社 | 焊膏及使用了它的电子机器 |
JP2006199937A (ja) * | 2004-12-15 | 2006-08-03 | Tamura Kaken Co Ltd | 導電性接着剤、これを用いた導電部及び電子部品モジュール |
CN101351296A (zh) * | 2005-11-11 | 2009-01-21 | 千住金属工业株式会社 | 焊膏和焊料接头 |
US7569164B2 (en) * | 2007-01-29 | 2009-08-04 | Harima Chemicals, Inc. | Solder precoating method |
US20080291634A1 (en) * | 2007-05-22 | 2008-11-27 | Weiser Martin W | Thermal interconnect and interface materials, methods of production and uses thereof |
JP4976257B2 (ja) * | 2007-10-24 | 2012-07-18 | パナソニック株式会社 | 導電性ペーストおよびこれを用いた実装体 |
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2011
- 2011-08-03 JP JP2011169966A patent/JP5728636B2/ja active Active
- 2011-09-22 US US13/240,043 patent/US8940198B2/en not_active Expired - Fee Related
- 2011-09-27 KR KR1020110097273A patent/KR101747242B1/ko active IP Right Grant
- 2011-09-28 TW TW100134969A patent/TWI507493B/zh not_active IP Right Cessation
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CN102559114B (zh) | 2015-04-01 |
US20120073869A1 (en) | 2012-03-29 |
TW201221602A (en) | 2012-06-01 |
JP2012092296A (ja) | 2012-05-17 |
KR101747242B1 (ko) | 2017-06-14 |
KR20120033254A (ko) | 2012-04-06 |
TWI507493B (zh) | 2015-11-11 |
US8940198B2 (en) | 2015-01-27 |
CN102559114A (zh) | 2012-07-11 |
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