JP5717640B2 - オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 - Google Patents
オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
活性層は、動作時に放射方向に沿って電磁放射を放出することに適している活性領域を有し、
第1の格子層は、放射方向に対して垂直に延在し、格子線として構成されている複数のストライプを有し、それらのストライプ間には中間空間が配置されており、
第2の格子層は、第1の格子層のストライプおよび中間空間を覆い、かつ、非エピタキシャル被着方法によって被着されている透明材料を有する。
A)動作時に放射方向に沿って電磁放射を放出することに適している活性領域を備えた活性層を準備するステップと、
B)放射方向に対して垂直に延在し、かつ、格子線として構成されている複数のストライプとそれらストライプ間に配置されている中間空間とを放射方向に沿って有する第1の格子層を活性層上に被着するステップと、
C)非エピタキシャル被着方法によって被着される透明材料を有する第2の格子層を第1の格子層上に被着し、第1の格子層のストライプおよび中間空間を覆うステップとを有する。
B1)第1の格子層を大面積で被着するステップ、
B2)活性領域の放射方向に対して垂直に延びる複数のストライプと、それらのストライプ間に位置する中間空間とを備えたマスク層を被着するステップ、
B3)マスク層の中間空間の領域において第1の格子層を湿式化学的にエッチングするステップ。
Claims (17)
- 相互に重なって配置されている複数の層を備えた半導体積層体を有するオプトエレクトロニクス半導体チップにおいて、
活性層(4)と、該活性層(4)上のエピタキシャルに成長された第1の格子層(7)と、該第1の格子層(7)上の第2の格子層(8)とを有し、
前記活性層(4)は、動作時に放射方向(99)に沿って電磁放射を放出することに適している活性領域(11)を有し、
前記第1の格子層(7)は、前記放射方向(99)に対して垂直に延在し、格子線として構成されている複数の相互に隔てられているストライプ(70)と、該ストライプ(70)間に配置されている中間空間(79)とを前記放射方向(99)に沿って有し、
前記第2の格子層(8)は、前記第1の格子層(7)の前記ストライプ(70)および前記中間空間(79)を覆い、かつ、非エピタキシャル被着方法によって被着されている透明材料を有する、
ことを特徴とする、オプトエレクトロニクス半導体チップ。 - 前記第2の格子層(8)は前記第1の格子層(7)よりも低い屈折率を有する、請求項1記載の半導体チップ。
- 前記第2の格子層(8)の屈折率は2.5以下である、請求項1または2記載の半導体チップ。
- 前記屈折率は2以下である、請求項3記載の半導体チップ。
- 前記第2の格子層(8)の前記透明材料は、透明導電性酸化物を含む、請求項1から4までのいずれか1項記載の半導体チップ。
- 前記透明導電性酸化物は酸化亜鉛または酸化インジウムスズである、請求項5記載の半導体チップ。
- 前記第2の格子層(8)は蒸着またはスパッタリングを用いて被着されている、請求項1から6までのいずれか1項記載の半導体チップ。
- 前記第1の格子層(7)はコンタクト層として構成されている、請求項1から7までのいずれか1項記載の半導体チップ。
- 前記第1の格子層(7)と前記活性層(4)との間には構造化されていないコンタクト層(10)が設けられている、請求項1から8までのいずれか1項記載の半導体チップ。
- 前記第1の格子層(7)と前記構造化されていないコンタクト層(10)との間には中間層(71)が配置されている、請求項9記載の半導体チップ。
- 前記中間層(71)はエッチストップ層として構成されている、請求項10記載の半導体チップ。
- 前記第1の格子層(7)および前記第2の格子層(8)は、前記半導体積層体の配置方向に沿って、前記活性領域(11)の上方に配置されている、請求項1から11までのいずれか1項記載の半導体チップ。
- 前記第1の格子層(7)および前記第2の格子層(8)は、縦方向において、前記活性領域(11)からずらされて配置されている、請求項1から11までのいずれか1項記載の半導体チップ。
- 前記第2の格子層(8)上に電極(9)が配置されている、請求項1から13までのいずれか1項記載の半導体チップ。
- 相互に重なって配置されている複数の層を備えた半導体積層体を有するオプトエレクトロニクス半導体チップの製造方法において、
A)動作時に放射方向(99)に沿って電磁放射を放出することに適している活性領域(11)を備えた活性層(4)を準備するステップと、
B)前記放射方向(99)に対して垂直に延在し、かつ、格子線として構成されている複数の相互に隔てられているストライプ(70)と、該ストライプ(70)間に配置されている中間空間(79)とを前記放射方向(99)に沿って有する第1の格子層(7)を前記活性層(4)上にエピタキシャル成長によって被着するステップと、
C)非エピタキシャル被着方法によって被着される透明材料を有する第2の格子層(8)を前記第1の格子層(7)上に被着し、前記第1の格子層(7)の前記ストライプ(70)および前記中間空間(79)を覆うステップとを有することを特徴とする、オプトエレクトロニクス半導体チップの製造方法。 - 前記透明材料は透明導電性酸化物を含み、前記透明材料を前記ステップCにおいて蒸着またはスパッタリングによって被着させる、請求項15記載の方法。
- 前記ステップAまたは前記ステップBは別の部分ステップ、すなわち、
B1)前記第1の格子層(7)を大面積で被着するステップ、
を有し、かつ、
前記ステップBは別の部分ステップ、すなわち
B2)前記活性領域(11)の前記放射方向(99)に対して垂直に延在する複数のストライプと、該ストライプ間に存在する中間空間とを備えたマスク層を被着するステップ、
B3)前記マスク層の中間空間の領域内に前記第1の格子層(7)を湿式化学的にエッチングするステップ、
を有する、請求項15または16記載の方法。
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DE102008054217.2 | 2008-10-31 | ||
DE102008054217A DE102008054217A1 (de) | 2008-10-31 | 2008-10-31 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
PCT/DE2009/001416 WO2010048918A1 (de) | 2008-10-31 | 2009-10-12 | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
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US10916915B2 (en) * | 2018-12-21 | 2021-02-09 | National Sun Yat-Sen University | Distributed feedback semiconductor laser device |
US11133649B2 (en) * | 2019-06-21 | 2021-09-28 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
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