JP5717636B2 - Ｌｅｄモジュールおよびその製造方法 - Google Patents

Ｌｅｄモジュールおよびその製造方法 Download PDF

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Publication number
JP5717636B2
JP5717636B2 JP2011528180A JP2011528180A JP5717636B2 JP 5717636 B2 JP5717636 B2 JP 5717636B2 JP 2011528180 A JP2011528180 A JP 2011528180A JP 2011528180 A JP2011528180 A JP 2011528180A JP 5717636 B2 JP5717636 B2 JP 5717636B2
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Japan
Prior art keywords
substrate
contact
led module
led
wafer
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Expired - Fee Related
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JP2011528180A
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English (en)
Japanese (ja)
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JP2012504318A (ja
JP2012504318A5 (enExample
Inventor
ゲオルク　ボーグナー
ボーグナー ゲオルク
ベルトルト　ハーン
ハーン ベルトルト
ヘルマン ジークフリート
ヘルマン ジークフリート
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2012504318A publication Critical patent/JP2012504318A/ja
Publication of JP2012504318A5 publication Critical patent/JP2012504318A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
JP2011528180A 2008-09-29 2009-08-26 Ｌｅｄモジュールおよびその製造方法 Expired - Fee Related JP5717636B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008049535A DE102008049535A1 (de) 2008-09-29 2008-09-29 LED-Modul und Herstellungsverfahren
DE102008049535.2 2008-09-29
PCT/DE2009/001207 WO2010034277A1 (de) 2008-09-29 2009-08-26 Led-modul und herstellungsverfahren

Publications (3)

Publication Number Publication Date
JP2012504318A JP2012504318A (ja) 2012-02-16
JP2012504318A5 JP2012504318A5 (enExample) 2012-09-20
JP5717636B2 true JP5717636B2 (ja) 2015-05-13

Family

ID=41611100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011528180A Expired - Fee Related JP5717636B2 (ja) 2008-09-29 2009-08-26 Ｌｅｄモジュールおよびその製造方法

Country Status (8)

Country Link
US (1) US20110227103A1 (enExample)
EP (1) EP2332186A1 (enExample)
JP (1) JP5717636B2 (enExample)
KR (1) KR20110070975A (enExample)
CN (1) CN102165612A (enExample)
DE (1) DE102008049535A1 (enExample)
TW (1) TW201013999A (enExample)
WO (1) WO2010034277A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010045054A1 (de) * 2010-09-10 2012-03-15 Osram Opto Semiconductors Gmbh Beleuchtungsvorrichtung
DE102012109139A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, Elektronische Baugruppe, Verfahren zum Herstellen von Gehäusen und Verfahren zum Herstellen elektronischer Baugruppen
DE102013103226A1 (de) 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
CN104681690A (zh) * 2013-12-03 2015-06-03 复盛精密工业股份有限公司 侧向型发光二极管的支架结构
JP6405697B2 (ja) 2014-05-21 2018-10-17 日亜化学工業株式会社 発光装置
DE102017115780A1 (de) * 2017-07-13 2019-01-17 Tdk Electronics Ag Leuchtdiodenbauteil, Leuchtdiodenanordnung und Verfahren zur Herstellung eines Leuchtdiodenbauteils
JP6822455B2 (ja) * 2018-09-19 2021-01-27 日亜化学工業株式会社 発光装置
CN112023255B (zh) * 2020-08-26 2023-05-26 清华大学 多功能植入式探针及其制备方法
JP1682191S (enExample) * 2020-09-25 2021-03-29
DE102022111033A1 (de) 2022-05-04 2023-11-09 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529659A (ja) * 1991-07-23 1993-02-05 Sharp Corp 側面発光型ｌｅｄランプとその製造方法
US6855552B2 (en) * 1998-09-03 2005-02-15 Ventana Medical Systems Automated immunohistochemical and in situ hybridization assay formulations
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP3668438B2 (ja) * 2001-06-07 2005-07-06 シャープ株式会社 チップ発光ダイオード
JP2003204081A (ja) * 2002-01-08 2003-07-18 Rohm Co Ltd 半導体発光装置
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
JP2004281538A (ja) * 2003-03-13 2004-10-07 Seiko Epson Corp 電子装置及びその製造方法、回路基板並びに電子機器
JP4792726B2 (ja) * 2003-10-30 2011-10-12 日亜化学工業株式会社 半導体素子用支持体の製造方法
KR101332771B1 (ko) * 2004-02-20 2013-11-25 오스람 옵토 세미컨덕터스 게엠베하 광전 소자, 다수의 광전 소자를 구비한 장치 및 광전 소자를 제조하기 위한 방법
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
JP4841550B2 (ja) * 2004-06-30 2011-12-21 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法並びにこれを用いた発光装置
US7271420B2 (en) * 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP2006186297A (ja) * 2004-12-03 2006-07-13 Toshiba Corp 半導体発光装置及びその製造方法
US7683393B2 (en) * 2004-12-07 2010-03-23 Ngk Spark Plug Co., Ltd. Wiring substrate for mounting light emitting element
JP4698259B2 (ja) * 2005-03-16 2011-06-08 三洋電機株式会社 電子部品搭載用パッケージ及びパッケージ集合基板
JP5279488B2 (ja) * 2005-05-30 2013-09-04 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ケーシング本体およびケーシング本体の製造方法
US7339196B2 (en) * 2005-06-25 2008-03-04 Industrial Technology Research Institute Packaging of SMD light emitting diodes
KR100606551B1 (ko) * 2005-07-05 2006-08-01 엘지전자 주식회사 발광소자 제조방법
GB2428879A (en) * 2005-07-26 2007-02-07 Unity Opto Technology Co Ltd Light emitting diode with uniform colour mixing
JP4821343B2 (ja) * 2006-02-04 2011-11-24 日亜化学工業株式会社 サブマウント基板及びこれを備える発光装置
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
JP4689637B2 (ja) * 2007-03-23 2011-05-25 シャープ株式会社 半導体発光装置
US7569421B2 (en) * 2007-05-04 2009-08-04 Stats Chippac, Ltd. Through-hole via on saw streets
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
DE102008013030A1 (de) * 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
KR100981214B1 (ko) * 2008-01-28 2010-09-10 알티전자 주식회사 발광다이오드 패키지

Also Published As

Publication number Publication date
EP2332186A1 (de) 2011-06-15
CN102165612A (zh) 2011-08-24
US20110227103A1 (en) 2011-09-22
KR20110070975A (ko) 2011-06-27
TW201013999A (en) 2010-04-01
DE102008049535A1 (de) 2010-04-08
JP2012504318A (ja) 2012-02-16
WO2010034277A1 (de) 2010-04-01

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