JP5709709B2 - 検出装置の製造方法、その検出装置及び検出システム - Google Patents

検出装置の製造方法、その検出装置及び検出システム Download PDF

Info

Publication number
JP5709709B2
JP5709709B2 JP2011209461A JP2011209461A JP5709709B2 JP 5709709 B2 JP5709709 B2 JP 5709709B2 JP 2011209461 A JP2011209461 A JP 2011209461A JP 2011209461 A JP2011209461 A JP 2011209461A JP 5709709 B2 JP5709709 B2 JP 5709709B2
Authority
JP
Japan
Prior art keywords
impurity semiconductor
semiconductor layer
electrode
film
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011209461A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013012697A (ja
JP2013012697A5 (enExample
Inventor
健太郎 藤吉
健太郎 藤吉
望月　千織
千織 望月
渡辺　実
実 渡辺
将人 大藤
将人 大藤
啓吾 横山
啓吾 横山
潤 川鍋
潤 川鍋
弘 和山
弘 和山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011209461A priority Critical patent/JP5709709B2/ja
Priority to EP12166102.9A priority patent/EP2530716B1/en
Priority to US13/477,472 priority patent/US8866093B2/en
Priority to CN201210168410.8A priority patent/CN102810547B/zh
Publication of JP2013012697A publication Critical patent/JP2013012697A/ja
Publication of JP2013012697A5 publication Critical patent/JP2013012697A5/ja
Application granted granted Critical
Publication of JP5709709B2 publication Critical patent/JP5709709B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2011209461A 2011-05-31 2011-09-26 検出装置の製造方法、その検出装置及び検出システム Expired - Fee Related JP5709709B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011209461A JP5709709B2 (ja) 2011-05-31 2011-09-26 検出装置の製造方法、その検出装置及び検出システム
EP12166102.9A EP2530716B1 (en) 2011-05-31 2012-04-30 Detection device manufacturing method, detection device, and detection system
US13/477,472 US8866093B2 (en) 2011-05-31 2012-05-22 Detection device manufacturing method, detection device, and detection system
CN201210168410.8A CN102810547B (zh) 2011-05-31 2012-05-28 检测器件制造方法、检测器件和检测系统

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011122015 2011-05-31
JP2011122015 2011-05-31
JP2011209461A JP5709709B2 (ja) 2011-05-31 2011-09-26 検出装置の製造方法、その検出装置及び検出システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015043744A Division JP5996019B2 (ja) 2011-05-31 2015-03-05 検出装置の製造方法、その検出装置及び検出システム

Publications (3)

Publication Number Publication Date
JP2013012697A JP2013012697A (ja) 2013-01-17
JP2013012697A5 JP2013012697A5 (enExample) 2014-10-30
JP5709709B2 true JP5709709B2 (ja) 2015-04-30

Family

ID=46396980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011209461A Expired - Fee Related JP5709709B2 (ja) 2011-05-31 2011-09-26 検出装置の製造方法、その検出装置及び検出システム

Country Status (4)

Country Link
US (1) US8866093B2 (enExample)
EP (1) EP2530716B1 (enExample)
JP (1) JP5709709B2 (enExample)
CN (1) CN102810547B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5709810B2 (ja) * 2012-10-02 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
CN103915404A (zh) * 2013-01-04 2014-07-09 佳邦科技股份有限公司 用于增加内外电极间的结合力的电子结构及电子封装构件
JP2014236162A (ja) * 2013-06-04 2014-12-15 キヤノン株式会社 検出装置、その製造方法及び放射線検出システム
JP6463136B2 (ja) * 2014-02-14 2019-01-30 キヤノン株式会社 放射線検出装置及び放射線検出システム
CN105101633B (zh) * 2014-05-20 2018-01-30 佳邦科技股份有限公司 电子结构及其制作方法及电子封装构件
JP6704599B2 (ja) * 2015-04-28 2020-06-03 天馬微電子有限公司 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置
US10804314B2 (en) 2016-09-21 2020-10-13 Sharp Kabushiki Kaisha Imaging panel and method for producing same
US10861898B2 (en) * 2017-03-16 2020-12-08 Sharp Kabushiki Kaisha Imaging device and X-ray imaging device
JP2019145595A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えたｘ線撮像パネルと製造方法
JP6929267B2 (ja) * 2018-12-26 2021-09-01 キヤノン株式会社 撮像装置及び撮像システム
CN109742126B (zh) * 2019-01-11 2022-02-11 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板、显示装置
CN114975491A (zh) * 2021-02-26 2022-08-30 京东方科技集团股份有限公司 一种阵列基板、平板探测器和阵列基板的制作方法
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930591A (en) * 1997-04-23 1999-07-27 Litton Systems Canada Limited High resolution, low voltage flat-panel radiation imaging sensors
CN1517069B (zh) * 2003-01-27 2012-03-28 佳能株式会社 放射线摄像装置和放射线摄像系统
JP4323827B2 (ja) * 2003-02-14 2009-09-02 キヤノン株式会社 固体撮像装置及び放射線撮像装置
US20060060863A1 (en) 2004-09-22 2006-03-23 Jennifer Lu System and method for controlling nanostructure growth
US7638772B2 (en) * 2007-02-28 2009-12-29 Canon Kabushiki Kaisha Imaging apparatus and radiation imaging system
JP5328169B2 (ja) * 2007-02-28 2013-10-30 キヤノン株式会社 撮像装置及び放射線撮像システム
JP5185013B2 (ja) * 2008-01-29 2013-04-17 富士フイルム株式会社 電磁波検出素子
WO2009116177A1 (ja) * 2008-03-21 2009-09-24 株式会社島津製作所 光マトリックスデバイス
US8129810B2 (en) * 2009-06-19 2012-03-06 Carestream Health, Inc. Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates
JP5502685B2 (ja) * 2010-09-29 2014-05-28 富士フイルム株式会社 放射線検出素子

Also Published As

Publication number Publication date
EP2530716A1 (en) 2012-12-05
US8866093B2 (en) 2014-10-21
JP2013012697A (ja) 2013-01-17
CN102810547A (zh) 2012-12-05
EP2530716B1 (en) 2018-04-25
US20120305785A1 (en) 2012-12-06
CN102810547B (zh) 2015-08-19

Similar Documents

Publication Publication Date Title
JP5709709B2 (ja) 検出装置の製造方法、その検出装置及び検出システム
JP6095276B2 (ja) 検出装置の製造方法、その検出装置及び検出システム
JP5709810B2 (ja) 検出装置の製造方法、その検出装置及び検出システム
US20130299711A1 (en) Detection device, detection system, and method of manufacturing detection device
US20130307041A1 (en) Method of manufacturing detection device, detection device, and detection system
US20130264485A1 (en) Method of manufacturing radiation detection apparatus, radiation detection apparatus, and radiation imaging system
JP2014110352A (ja) 検出装置の製造方法
JP2014236162A (ja) 検出装置、その製造方法及び放射線検出システム
JP6053379B2 (ja) 検出装置の製造方法、検出装置及び検出システム
JP2004179645A (ja) 撮像装置、放射線撮像装置及び放射線撮像システム
JP2014225527A (ja) 検出装置、及び、検出システム
KR20180060769A (ko) 광차단층을 구비한 디지털 엑스레이 검출장치 및 그 제조방법
JP5996019B2 (ja) 検出装置の製造方法、その検出装置及び検出システム
CN102751297A (zh) 检测器的制造方法、放射线检测装置和放射线检测系统
JP2014225524A (ja) 検出装置の製造方法、その検出装置、及び、検出システム
CN104167421B (zh) 检测装置和检测系统
US9165957B2 (en) Detecting device, detecting system, and manufacturing method of detecting device
JP6164924B2 (ja) 検出装置、及び、検出システム
JP2014225526A (ja) 検出装置、及び、検出システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140912

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140912

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20140912

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20141015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150113

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150303

R151 Written notification of patent or utility model registration

Ref document number: 5709709

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees