CN102810547B - 检测器件制造方法、检测器件和检测系统 - Google Patents
检测器件制造方法、检测器件和检测系统 Download PDFInfo
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- CN102810547B CN102810547B CN201210168410.8A CN201210168410A CN102810547B CN 102810547 B CN102810547 B CN 102810547B CN 201210168410 A CN201210168410 A CN 201210168410A CN 102810547 B CN102810547 B CN 102810547B
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- impurity semiconductor
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- 238000001514 detection method Methods 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 12
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- 239000004065 semiconductor Substances 0.000 claims abstract description 245
- 239000012535 impurity Substances 0.000 claims abstract description 194
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 84
- 239000011368 organic material Substances 0.000 claims abstract description 41
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
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- 239000010408 film Substances 0.000 description 147
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
- 238000001312 dry etching Methods 0.000 description 21
- 230000005855 radiation Effects 0.000 description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 13
- 238000002161 passivation Methods 0.000 description 9
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- 238000002156 mixing Methods 0.000 description 8
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
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- 238000000137 annealing Methods 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
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- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910018572 CuAlO2 Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011122015 | 2011-05-31 | ||
| JP2011-122015 | 2011-05-31 | ||
| JP2011209461A JP5709709B2 (ja) | 2011-05-31 | 2011-09-26 | 検出装置の製造方法、その検出装置及び検出システム |
| JP2011-209461 | 2011-09-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102810547A CN102810547A (zh) | 2012-12-05 |
| CN102810547B true CN102810547B (zh) | 2015-08-19 |
Family
ID=46396980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210168410.8A Active CN102810547B (zh) | 2011-05-31 | 2012-05-28 | 检测器件制造方法、检测器件和检测系统 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8866093B2 (enExample) |
| EP (1) | EP2530716B1 (enExample) |
| JP (1) | JP5709709B2 (enExample) |
| CN (1) | CN102810547B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5709810B2 (ja) * | 2012-10-02 | 2015-04-30 | キヤノン株式会社 | 検出装置の製造方法、その検出装置及び検出システム |
| CN103915404A (zh) * | 2013-01-04 | 2014-07-09 | 佳邦科技股份有限公司 | 用于增加内外电极间的结合力的电子结构及电子封装构件 |
| JP2014236162A (ja) * | 2013-06-04 | 2014-12-15 | キヤノン株式会社 | 検出装置、その製造方法及び放射線検出システム |
| JP6463136B2 (ja) * | 2014-02-14 | 2019-01-30 | キヤノン株式会社 | 放射線検出装置及び放射線検出システム |
| CN105101633B (zh) * | 2014-05-20 | 2018-01-30 | 佳邦科技股份有限公司 | 电子结构及其制作方法及电子封装构件 |
| JP6704599B2 (ja) * | 2015-04-28 | 2020-06-03 | 天馬微電子有限公司 | 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置 |
| US10804314B2 (en) | 2016-09-21 | 2020-10-13 | Sharp Kabushiki Kaisha | Imaging panel and method for producing same |
| US10861898B2 (en) * | 2017-03-16 | 2020-12-08 | Sharp Kabushiki Kaisha | Imaging device and X-ray imaging device |
| JP2019145595A (ja) * | 2018-02-16 | 2019-08-29 | シャープ株式会社 | アクティブマトリクス基板及びそれを備えたｘ線撮像パネルと製造方法 |
| JP6929267B2 (ja) * | 2018-12-26 | 2021-09-01 | キヤノン株式会社 | 撮像装置及び撮像システム |
| CN109742126B (zh) * | 2019-01-11 | 2022-02-11 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板、显示装置 |
| CN114975491A (zh) * | 2021-02-26 | 2022-08-30 | 京东方科技集团股份有限公司 | 一种阵列基板、平板探测器和阵列基板的制作方法 |
| JP7449264B2 (ja) * | 2021-08-18 | 2024-03-13 | 株式会社東芝 | 放射線検出器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5930591A (en) * | 1997-04-23 | 1999-07-27 | Litton Systems Canada Limited | High resolution, low voltage flat-panel radiation imaging sensors |
| CN1517069B (zh) * | 2003-01-27 | 2012-03-28 | 佳能株式会社 | 放射线摄像装置和放射线摄像系统 |
| JP4323827B2 (ja) * | 2003-02-14 | 2009-09-02 | キヤノン株式会社 | 固体撮像装置及び放射線撮像装置 |
| US20060060863A1 (en) | 2004-09-22 | 2006-03-23 | Jennifer Lu | System and method for controlling nanostructure growth |
| US7638772B2 (en) * | 2007-02-28 | 2009-12-29 | Canon Kabushiki Kaisha | Imaging apparatus and radiation imaging system |
| JP5328169B2 (ja) * | 2007-02-28 | 2013-10-30 | キヤノン株式会社 | 撮像装置及び放射線撮像システム |
| JP5185013B2 (ja) * | 2008-01-29 | 2013-04-17 | 富士フイルム株式会社 | 電磁波検出素子 |
| WO2009116177A1 (ja) * | 2008-03-21 | 2009-09-24 | 株式会社島津製作所 | 光マトリックスデバイス |
| US8129810B2 (en) * | 2009-06-19 | 2012-03-06 | Carestream Health, Inc. | Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates |
| JP5502685B2 (ja) * | 2010-09-29 | 2014-05-28 | 富士フイルム株式会社 | 放射線検出素子 |
-
2011
- 2011-09-26 JP JP2011209461A patent/JP5709709B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-30 EP EP12166102.9A patent/EP2530716B1/en not_active Not-in-force
- 2012-05-22 US US13/477,472 patent/US8866093B2/en active Active
- 2012-05-28 CN CN201210168410.8A patent/CN102810547B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2530716A1 (en) | 2012-12-05 |
| US8866093B2 (en) | 2014-10-21 |
| JP2013012697A (ja) | 2013-01-17 |
| CN102810547A (zh) | 2012-12-05 |
| EP2530716B1 (en) | 2018-04-25 |
| US20120305785A1 (en) | 2012-12-06 |
| JP5709709B2 (ja) | 2015-04-30 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |