JP5707697B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5707697B2
JP5707697B2 JP2009285971A JP2009285971A JP5707697B2 JP 5707697 B2 JP5707697 B2 JP 5707697B2 JP 2009285971 A JP2009285971 A JP 2009285971A JP 2009285971 A JP2009285971 A JP 2009285971A JP 5707697 B2 JP5707697 B2 JP 5707697B2
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JP
Japan
Prior art keywords
light emitting
light
emitting element
layer
semiconductor
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Active
Application number
JP2009285971A
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English (en)
Japanese (ja)
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JP2011129661A (ja
JP2011129661A5 (enExample
Inventor
将嗣 市川
将嗣 市川
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Nichia Corp
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Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2009285971A priority Critical patent/JP5707697B2/ja
Priority to US12/970,355 priority patent/US8552448B2/en
Publication of JP2011129661A publication Critical patent/JP2011129661A/ja
Publication of JP2011129661A5 publication Critical patent/JP2011129661A5/ja
Priority to US13/959,834 priority patent/US8647906B2/en
Application granted granted Critical
Publication of JP5707697B2 publication Critical patent/JP5707697B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
JP2009285971A 2009-12-17 2009-12-17 発光装置 Active JP5707697B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009285971A JP5707697B2 (ja) 2009-12-17 2009-12-17 発光装置
US12/970,355 US8552448B2 (en) 2009-12-17 2010-12-16 Light emitting device
US13/959,834 US8647906B2 (en) 2009-12-17 2013-08-06 Method for manufacturing a light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009285971A JP5707697B2 (ja) 2009-12-17 2009-12-17 発光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015038705A Division JP2015099945A (ja) 2015-02-27 2015-02-27 発光装置

Publications (3)

Publication Number Publication Date
JP2011129661A JP2011129661A (ja) 2011-06-30
JP2011129661A5 JP2011129661A5 (enExample) 2013-02-07
JP5707697B2 true JP5707697B2 (ja) 2015-04-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009285971A Active JP5707697B2 (ja) 2009-12-17 2009-12-17 発光装置

Country Status (2)

Country Link
US (2) US8552448B2 (enExample)
JP (1) JP5707697B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10270014B2 (en) 2016-11-11 2019-04-23 Samsung Electronics Co., Ltd. Light-emitting device package

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JP5562047B2 (ja) * 2010-01-19 2014-07-30 日東光学株式会社 白色ｌｅｄ照明装置、および光学レンズ
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KR101843426B1 (ko) * 2011-09-07 2018-03-29 엘지이노텍 주식회사 발광모듈
JP5893888B2 (ja) * 2011-10-13 2016-03-23 シチズン電子株式会社 半導体発光装置
TWI614452B (zh) * 2011-10-13 2018-02-11 英特曼帝克司公司 用於固態發光裝置和燈的光致發光波長轉換構件
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JP2013232503A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
JP2013232479A (ja) * 2012-04-27 2013-11-14 Toshiba Corp 半導体発光装置
JP5845134B2 (ja) * 2012-04-27 2016-01-20 株式会社東芝 波長変換体および半導体発光装置
TWI489658B (zh) * 2012-05-25 2015-06-21 東芝股份有限公司 半導體發光裝置及光源單元
WO2013179624A1 (ja) * 2012-05-31 2013-12-05 パナソニック株式会社 Ｌｅｄモジュール、照明器具及びランプ
JP6062431B2 (ja) * 2012-06-18 2017-01-18 シャープ株式会社 半導体発光装置
US20140048824A1 (en) 2012-08-15 2014-02-20 Epistar Corporation Light-emitting device
US9356070B2 (en) 2012-08-15 2016-05-31 Epistar Corporation Light-emitting device
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JP5819335B2 (ja) * 2013-02-18 2015-11-24 株式会社東芝 半導体発光装置およびその製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10270014B2 (en) 2016-11-11 2019-04-23 Samsung Electronics Co., Ltd. Light-emitting device package

Also Published As

Publication number Publication date
US8552448B2 (en) 2013-10-08
US20110147778A1 (en) 2011-06-23
US8647906B2 (en) 2014-02-11
US20130316478A1 (en) 2013-11-28
JP2011129661A (ja) 2011-06-30

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