JP5706469B2 - メタルpcbを有するledパッケージ - Google Patents
メタルpcbを有するledパッケージ Download PDFInfo
- Publication number
- JP5706469B2 JP5706469B2 JP2013112983A JP2013112983A JP5706469B2 JP 5706469 B2 JP5706469 B2 JP 5706469B2 JP 2013112983 A JP2013112983 A JP 2013112983A JP 2013112983 A JP2013112983 A JP 2013112983A JP 5706469 B2 JP5706469 B2 JP 5706469B2
- Authority
- JP
- Japan
- Prior art keywords
- thin plate
- metal thin
- led package
- metal
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910052751 metal Inorganic materials 0.000 title claims description 81
- 239000002184 metal Substances 0.000 title claims description 81
- 238000007789 sealing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- IYZWUWBAFUBNCH-UHFFFAOYSA-N 2,6-dichlorobiphenyl Chemical compound ClC1=CC=CC(Cl)=C1C1=CC=CC=C1 IYZWUWBAFUBNCH-UHFFFAOYSA-N 0.000 description 15
- 239000002994 raw material Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000035939 shock Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- XVIZMMSINIOIQP-UHFFFAOYSA-N 1,2-dichloro-3-(2-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C(=CC=CC=2)Cl)=C1Cl XVIZMMSINIOIQP-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
上に装着され、その印刷回路基板に形成された電極から電流を印加され、発光動作するように構成される。
図1は、本発明の一実施例によるLEDパッケージを示す斜視図であり、図2は、図1に示したLEDパッケージの断面図である。
薄板16、12の間に介在された絶縁層14とを有し、前記第1及び第2の金属薄板16、12は、前記絶縁層14を挟んで積層されている。前記第2の金属薄板12は、銅又は銅合金からなったまま、前記メタルPCB10のベースをなし、前記第1の金属薄板16は、銅又は銅合金からなったまま、前記絶縁層14により、前記第2の金属薄板12と電気的に絶縁されている。
材として用いられている。
10 メタルPCB
16 第1の金属薄板
14 絶縁層
12 第2の金属薄板
31 封止部材
32 封止部材の拡張部
20 ホールカップ
162a、162b 電極パターン
164a、164b リード
165a、165b ビア導電部
121、122 端子パターン
Claims (7)
- 互いに離隔された第1の電極パターン及び第2の電極パターンを含む第1の金属薄板と、
互いに離隔された第1の端子パターン及び第2の端子パターンを含む第2の金属薄板と、
前記第1の金属薄板と前記第2の金属薄板との間に介在され、それ自体に形成された第1の開口部及び第2の開口部を含む絶縁層と、
前記第1の電極パターンと前記第1の端子パターンを接続するために前記第1の開口部内に充填される第1のビア導電部と、
前記第2の電極パターンと前記第2の端子パターンを接続するために前記第2の開口部内に充填される第2のビア導電部と、
前記第1の金属薄板上に配置され、前記第1の電極パターン及び第2の電極パターンを露出させる第3の開口部を含むホールカップと、
前記第3の開口部内に位置したLEDチップと、
前記第3の開口部を覆うように、前記ホールカップ上に配置された封止部材と、を含み、
前記LEDチップは前記第1の電極パターンに取り付けられ、ボンディングワイヤにより、前記第2の電極パターンと電気的に連結され、
前記封止部材は、前記ホールカップの上部表面、前記ホールカップ、前記第1の金属薄板、前記絶縁層、及び前記第2の金属薄板の側面を覆う拡張部を含むことを特徴とするLEDパッケージ。 - 前記ホールカップは、前記第1の金属薄板上に直接配置された絶縁板と、前記絶縁板上に直接配置された反射板と、を含むことを特徴とする請求項1に記載のLEDパッケージ。
- 前記封止部材は、前記第3の開口部に対応する位置の凸部を含むことを特徴とする請求項1に記載のLEDパッケージ。
- 前記絶縁層は、樹脂、セラミック、またはFR4材質を含むことを特徴とする請求項1に記載のLEDパッケージ。
- 前記反射板は、金属を含むことを特徴とする請求項2に記載のLEDパッケージ。
- 前記反射板は、アルミニウムを含むことを特徴とする請求項2に記載のLEDパッケージ。
- 前記第1の金属薄板及び前記第2の金属薄板は、それぞれ銅または銅合金を含むことを特徴とする請求項1に記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070032018A KR100850666B1 (ko) | 2007-03-30 | 2007-03-30 | 메탈 pcb를 갖는 led 패키지 |
KR10-2007-0032018 | 2007-03-30 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008086946A Division JP2008258617A (ja) | 2007-03-30 | 2008-03-28 | メタルpcbを有するledパッケージ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013168682A JP2013168682A (ja) | 2013-08-29 |
JP5706469B2 true JP5706469B2 (ja) | 2015-04-22 |
Family
ID=39792671
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008086946A Withdrawn JP2008258617A (ja) | 2007-03-30 | 2008-03-28 | メタルpcbを有するledパッケージ |
JP2013112983A Active JP5706469B2 (ja) | 2007-03-30 | 2013-05-29 | メタルpcbを有するledパッケージ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008086946A Withdrawn JP2008258617A (ja) | 2007-03-30 | 2008-03-28 | メタルpcbを有するledパッケージ |
Country Status (3)
Country | Link |
---|---|
US (2) | US7642563B2 (ja) |
JP (2) | JP2008258617A (ja) |
KR (1) | KR100850666B1 (ja) |
Families Citing this family (32)
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TWI488329B (zh) * | 2008-05-15 | 2015-06-11 | Everlight Electronics Co Ltd | 線路基板與發光二極體封裝 |
JP4780203B2 (ja) * | 2009-02-10 | 2011-09-28 | 日亜化学工業株式会社 | 半導体発光装置 |
TWI380486B (en) | 2009-03-02 | 2012-12-21 | Everlight Electronics Co Ltd | Heat dissipation module for a light emitting device and light emitting diode device having the same |
JP5574667B2 (ja) * | 2009-10-21 | 2014-08-20 | キヤノン株式会社 | パッケージ、半導体装置、それらの製造方法及び機器 |
KR101108984B1 (ko) * | 2009-12-03 | 2012-01-31 | (주) 아모엘이디 | 멀티칩 엘이디 패키지 및 그의 제조방법 |
KR200462269Y1 (ko) | 2010-03-30 | 2012-09-03 | 에스디아이 코퍼레이션 | 향상된 신뢰성을 구비한 발광 장치 패키지 프레임 |
CN102376855B (zh) | 2010-08-09 | 2015-08-19 | Lg伊诺特有限公司 | 发光器件和具有发光器件的照明系统 |
KR101626412B1 (ko) * | 2010-12-24 | 2016-06-02 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
CN102163599A (zh) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Led封装模块 |
CN102163600A (zh) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Led封装模块 |
KR101825473B1 (ko) * | 2011-02-16 | 2018-02-05 | 삼성전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
KR101846356B1 (ko) * | 2011-07-29 | 2018-04-09 | 엘지이노텍 주식회사 | 광소자 패키지 및 그 제조 방법 |
KR101846364B1 (ko) * | 2011-07-29 | 2018-04-09 | 엘지이노텍 주식회사 | 광소자 패키지 및 그 제조 방법 |
JP2013042079A (ja) | 2011-08-19 | 2013-02-28 | Sharp Corp | 半導体発光装置 |
CN104684414A (zh) | 2011-12-19 | 2015-06-03 | 可口可乐公司 | 纯化甜叶菊醇糖苷的方法和其用途 |
AU2013231791A1 (en) | 2012-03-12 | 2014-10-23 | Zhejiang Ledison Optoelectronics Co, Ltd. | LED Light-Emitting Column and LED Light Using the Same |
KR20130107536A (ko) * | 2012-03-22 | 2013-10-02 | 삼성전자주식회사 | Led패키지 및 그 제조방법 |
CN103366645A (zh) * | 2013-03-22 | 2013-10-23 | 美的集团武汉制冷设备有限公司 | 一种发光显示装置 |
WO2014196833A1 (ko) * | 2013-06-07 | 2014-12-11 | 서울반도체 주식회사 | 발광 디바이스 |
US10016580B2 (en) | 2013-12-17 | 2018-07-10 | Biovision Technologies, Llc | Methods for treating sinus diseases |
US9516995B2 (en) | 2013-12-17 | 2016-12-13 | Biovision Technologies, Llc | Surgical device for performing a sphenopalatine ganglion block procedure |
US9510743B2 (en) | 2013-12-17 | 2016-12-06 | Biovision Technologies, Llc | Stabilized surgical device for performing a sphenopalatine ganglion block procedure |
US9694163B2 (en) | 2013-12-17 | 2017-07-04 | Biovision Technologies, Llc | Surgical device for performing a sphenopalatine ganglion block procedure |
US9876152B2 (en) * | 2014-05-27 | 2018-01-23 | Epistar Corporation | Light emitting device with an adhered heat-dissipating structure |
KR101637328B1 (ko) * | 2015-03-30 | 2016-07-07 | 주식회사 루멘스 | 발광 소자 패키지 및 조명 장치 |
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KR100671979B1 (ko) * | 2005-06-29 | 2007-01-19 | 윤성만 | 발광다이오드용 방열 패키지 |
JP2007013066A (ja) * | 2005-07-04 | 2007-01-18 | Element Denshi:Kk | 発光装置 |
KR100854328B1 (ko) * | 2006-07-07 | 2008-08-28 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
-
2007
- 2007-03-30 KR KR1020070032018A patent/KR100850666B1/ko active IP Right Grant
-
2008
- 2008-03-28 JP JP2008086946A patent/JP2008258617A/ja not_active Withdrawn
- 2008-03-28 US US12/058,417 patent/US7642563B2/en active Active
-
2009
- 2009-11-23 US US12/623,978 patent/US8138512B2/en active Active
-
2013
- 2013-05-29 JP JP2013112983A patent/JP5706469B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US8138512B2 (en) | 2012-03-20 |
US7642563B2 (en) | 2010-01-05 |
KR100850666B1 (ko) | 2008-08-07 |
US20100065876A1 (en) | 2010-03-18 |
JP2008258617A (ja) | 2008-10-23 |
US20080237624A1 (en) | 2008-10-02 |
JP2013168682A (ja) | 2013-08-29 |
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