JP5696428B2 - 反転パターン形成方法及びポリシロキサン樹脂組成物 - Google Patents

反転パターン形成方法及びポリシロキサン樹脂組成物 Download PDF

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Publication number
JP5696428B2
JP5696428B2 JP2010240174A JP2010240174A JP5696428B2 JP 5696428 B2 JP5696428 B2 JP 5696428B2 JP 2010240174 A JP2010240174 A JP 2010240174A JP 2010240174 A JP2010240174 A JP 2010240174A JP 5696428 B2 JP5696428 B2 JP 5696428B2
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Japan
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group
mask pattern
resin composition
pattern forming
formula
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Japanese (ja)
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JP2011118373A (ja
Inventor
慧 出井
慧 出井
慶友 保田
慶友 保田
長谷川　公一
公一 長谷川
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JSR Corp
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JSR Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/06—Ethers; Acetals; Ketals; Ortho-esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silicon Polymers (AREA)
JP2010240174A 2009-10-30 2010-10-26 反転パターン形成方法及びポリシロキサン樹脂組成物 Active JP5696428B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010240174A JP5696428B2 (ja) 2009-10-30 2010-10-26 反転パターン形成方法及びポリシロキサン樹脂組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009249874 2009-10-30
JP2009249874 2009-10-30
JP2010240174A JP5696428B2 (ja) 2009-10-30 2010-10-26 反転パターン形成方法及びポリシロキサン樹脂組成物

Publications (2)

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JP2011118373A JP2011118373A (ja) 2011-06-16
JP5696428B2 true JP5696428B2 (ja) 2015-04-08

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JP2010240174A Active JP5696428B2 (ja) 2009-10-30 2010-10-26 反転パターン形成方法及びポリシロキサン樹脂組成物

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Country Link
JP (1) JP5696428B2 (ko)
KR (1) KR101674703B1 (ko)
TW (1) TWI596159B (ko)
WO (1) WO2011052611A1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6480691B2 (ja) * 2013-10-21 2019-03-13 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ケイ素含有熱または光硬化性組成物
WO2015118995A1 (ja) * 2014-02-07 2015-08-13 株式会社ダイセル シリコーン溶解用溶剤
JP6587065B2 (ja) * 2014-02-26 2019-10-09 日産化学株式会社 レジストパターンに塗布されるポリマー含有塗布液
KR102369818B1 (ko) * 2015-01-13 2022-03-04 주식회사 동진쎄미켐 포지티브형 감광성 실록산 수지 조성물
JP6738049B2 (ja) * 2015-09-09 2020-08-12 日産化学株式会社 シリコン含有平坦化性パターン反転用被覆剤
JP7143763B2 (ja) * 2016-02-24 2022-09-29 日産化学株式会社 シリコン含有パターン反転用被覆剤
KR20180118636A (ko) * 2016-02-24 2018-10-31 닛산 가가쿠 가부시키가이샤 실리콘 함유 조성물을 이용한 반도체 기판의 평탄화방법
JP6734913B2 (ja) * 2016-02-29 2020-08-05 富士フイルム株式会社 パターン積層体の製造方法、反転パターンの製造方法およびパターン積層体
FI127462B (en) * 2016-07-14 2018-06-29 Inkron Oy Siloxane monomers, their polymerization and uses
US11884839B2 (en) 2016-08-29 2024-01-30 Nissan Chemical Corporation Acetal-protected silanol group-containing polysiloxane composition
WO2018066515A1 (ja) * 2016-10-04 2018-04-12 日産化学工業株式会社 パターン反転のための被覆組成物
JP6699903B2 (ja) * 2017-01-27 2020-05-27 株式会社東芝 パターン形成方法、半導体装置及びその製造方法
JP2019120750A (ja) * 2017-12-28 2019-07-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 感光性シロキサン組成物およびこれを用いたパターン形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3848070B2 (ja) 2000-09-27 2006-11-22 株式会社東芝 パターン形成方法
JP2002235037A (ja) * 2001-02-13 2002-08-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP2003064305A (ja) * 2001-08-27 2003-03-05 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP3906916B2 (ja) * 2002-07-29 2007-04-18 Ｊｓｒ株式会社 膜形成用組成物、膜形成方法および膜
JP2007019161A (ja) * 2005-07-06 2007-01-25 Dainippon Screen Mfg Co Ltd パターン形成方法及び被膜形成装置
KR101423058B1 (ko) * 2006-10-12 2014-07-25 닛산 가가쿠 고교 가부시키 가이샤 4층계 적층체에 의한 반도체장치의 제조방법
CN101784958B (zh) * 2007-08-24 2013-03-27 东丽株式会社 感光性组合物、由该组合物形成的固化膜、以及具有固化膜的元件
JP5077569B2 (ja) * 2007-09-25 2012-11-21 信越化学工業株式会社 パターン形成方法
JP5158370B2 (ja) * 2008-02-14 2013-03-06 信越化学工業株式会社 ダブルパターン形成方法
JP5007827B2 (ja) * 2008-04-04 2012-08-22 信越化学工業株式会社 ダブルパターン形成方法

Also Published As

Publication number Publication date
TWI596159B (zh) 2017-08-21
WO2011052611A1 (ja) 2011-05-05
JP2011118373A (ja) 2011-06-16
KR101674703B1 (ko) 2016-11-09
KR20120091138A (ko) 2012-08-17
TW201132706A (en) 2011-10-01

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