JP5687681B2 - 4ウエイ排気ガス処理のための高多孔度フィルタ - Google Patents
4ウエイ排気ガス処理のための高多孔度フィルタ Download PDFInfo
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- JP5687681B2 JP5687681B2 JP2012266124A JP2012266124A JP5687681B2 JP 5687681 B2 JP5687681 B2 JP 5687681B2 JP 2012266124 A JP2012266124 A JP 2012266124A JP 2012266124 A JP2012266124 A JP 2012266124A JP 5687681 B2 JP5687681 B2 JP 5687681B2
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- 239000011148 porous material Substances 0.000 claims description 108
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- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 60
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Description
(i) ≧10μmかつ<18μmの細孔径中央値(d50)においてCTEが<6.0×10−7/℃、
(ii) ≧18μmかつ<22μmの細孔径中央値(d50)においてCTEが<9.0×10−7/℃、
(iii)≧22μmかつ≦25μmの細孔径中央値(d50)においてCTEが<10.0×10−7/℃、
(iv) >25μmかつ<29μmの細孔径中央値(d50)においてCTEが<13.0×10−7/℃、または
(v) ≧29μmかつ≦45μmの細孔径中央値(d50)においてCTEが<17.0×10−7/℃かつ≧3.0×10−7/℃、
の範囲のいずれかの内に入る、細孔径中央値及び25〜800℃での熱膨張係数(CTE)平均値を有する、コージエライトセラミック製品を含む。本説明の目的のため、コージエライトセラミック材料の細孔径中央値(d50)は従来通りに材料の細孔体積の50%がそれより微細な細孔径をもつ細孔径として定義され、全ての細孔径及び%細孔体積は標準の水銀多孔度測定法によって決定される。
0.5(d50−24.0)<CTE(25〜800℃)<0.5(d50−5.0)
を満たす、高多孔度コージエライトセラミック製品を含む。この場合にも、体積多孔度が少なくとも64%で80%未満の高多孔度コージエライトセラミックが含まれる。
(i) ≧10μmかつ<18μmの細孔径中央値(d50)において、CTEが<6.0×10−7/℃、
(ii) ≧18μmかつ<22μmの細孔径中央値(d50)において、CTEが<9.0×10−7/℃、
(iii)≧22μmかつ≦25μmの細孔径中央値(d50)において、CTEが<10.0×10−7/℃、
(iv) >25μmかつ<29μmの細孔径中央値(d50)において、CTEが<13.0×10−7/℃、または
(v) ≧29μmかつ≦45μmの細孔径中央値(d50)において、CTEが<17.0×10−7/℃かつ≧3.0×10−7/℃、
の範囲のいずれかの内に入る、(標準的な水銀多孔度測定法で決定させるような)細孔径中央値(d50)及び25〜800℃の温度範囲にわたって平均された軸方向熱膨張係数(CTE)平均値を有するであろう。本発明の好ましいコージエライトセラミックは、
(i) ≧10μmかつ<18μmの細孔径中央値(d50)において、>2.0×10−7/℃かつ<5.0×10−7/℃のCTE,
(ii) ≧18μmかつ<22μmの細孔径中央値(d50)において、>3.0×10−7/℃かつ<8.0×10−7/℃のCTE,
(iii)≧22μmかつ≦25μmの細孔径中央値(d50)において、>4.0×10−7/℃かつ<9.0×10−7/℃のCTE,
(iv) >25μmかつ<29μmの細孔径中央値(d50)において、>5.0×10−7/℃かつ<11.0×10−7/℃のCTE,または
(v) ≧29μmかつ≦39μmの細孔径中央値(d50)において、<14.0×10−7/℃かつ≧3.0×10−7/℃のCTE、
の範囲のいずれかの内に入る細孔径中央値及び25〜800℃の熱膨張係数平均値を有する。
0.5(d50−24.0)<CTE(25〜800℃)<0.5(d50−5.0)
を満たす、25〜800℃の温度範囲にわたって平均された熱膨張係数(CTE)平均値を示し、多孔度は少なくとも64%かつ80%未満であり、細孔径中央値(d50)は少なくとも10μmかつ45μm以下である。好ましい実施形態にしたがえば、熱膨張係数(CTE)平均値は、d50をμm単位で表し、CTE(25〜800℃)平均値を10−7/℃単位で表したときに、関係式:
0.5(d50−24.0)<CTE(25〜800℃)<0.5(d50−5.0)
を満たして、多孔度は少なくとも64%かつ80%未満、細孔径中央値(d50)は少なくとも13μmかつ40μm以下で、CTE平均値は少なくとも3.0×10−7/℃かつ13×10−7/℃以下である。
I-比=I(110)/[I(110)+I(002)]
で定義される。ここで、I(110)及びI(002)は、XRDピークの六方晶指数付けに基づく、コージエライト結晶格子の(110)面及び(002)面からのXRD反射のピーク高である。I-比は、軸方向断面(チャネル長に直交する断面)または横方向表面(焼成したままのハニカム壁表面)について、CuKα線を用いるX線回折法で測定した。I-比は、ハニカム製品内のコージエライト結晶の方位がハニカム壁の平面に平行なそれぞれの負熱膨張c軸に沿う度合いの定量的尺度である。そのような方位の度合いは大きい方が、(壁の平面内で、チャネルの長さに平行な)軸方向及び(壁の平面内で、チャネル長に直交する)径方向のいずれにおいても、ハニカム製品のCTEを低下させるから望ましい。コージエライト結晶の方位がランダムな場合、軸方向I-比及び横方向I-比はいずれもほぼ0.65に等しい。0.65より大きい横方向I-比値及び0.65より小さい軸方向I-比値は、コージエライト結晶が壁の平面に平行なそれぞれのc軸に沿って優先配向していることを示す。コージエライト結晶の全てが壁の平面においてそれぞれのc軸に沿って並んでいれば、横方向I-比値は1.0になるであろう。
{w[2(N−0.5)−w]N}
に等しい。ここで,wはインチを単位とする壁厚であり、Nは(インチ)−2を単位とするセル密度である。ウォールフローフィルタ構造に用いられることになる有セル構造体に対して、MOR/CFAの値は少なくとも500psi(3.45×106Pa)であることが望ましく、少なくとも700psi(4.83×106Pa)であることが好ましく、少なくとも900psi(6.20×106Pa)であることが一層好ましく、少なくとも1000psi(6.89×106Pa)であることが最も好ましいであろう。
(i) 18μm<d50≦50μm,
(ii) d50>158−2.0(%多孔度),及び
(iii)d50<210−2.5(%多孔度),
の限定範囲を同時に満たす細孔径中央値(d50)を有するであろう。細孔径中央値は、上記範囲内で多孔度が高い側のコージエライトセラミックにおいては30μm未満にあることが好ましいであろう。
(i) 25μm<細孔径中央値<46μm及び64%<多孔度≦67%,
(ii) 21μm<細孔径中央値<42μm及び67%<多孔度≦68%,
(iii)19μm≦細孔径中央値<40μm及び68%<多孔度<71%,
(iv) 18μm<細孔径中央値<35μm及び71%≦多孔度<73%,または
(v) 10μm<細孔径中央値<30μm及び73%≦多孔度<75%,
の内のいずれかを満たすであろう。多孔度設計の上記領域内の好ましいセラミックは<30μmの細孔径中央値を有するであろう。
(i)CTE(25〜800℃)が<15.0×10−7/℃で、細孔径中央値が>10μmかつ<30μm,または
(ii)CTE(25〜800℃)が≧3.0×10−7/℃かつ<15.0×10−7/℃で、細孔径中央値が≧30μmかつ≦45μm,
のセラミックで、優れたレベルの圧力降下、TSR及びMORが示される。図面の図6には、細孔径中央値及びCTEの上記の範囲内の実施例についての細孔径中央値d50及びCTE平均値(25〜800℃,×10−7/℃)がプロットされている。図6の外郭線で囲まれた範囲の内の全ての実施例が、65%より大きく、かつ75%より小さい多孔度を有し、全てが、(d90−d10)/d50<1.70を満たす狭い細孔径分布(Db)を有し、全てが≧10μmのd10値を有する。そのようなセラミック体は、>65%かつ<75%の多孔度、(d90−d10)/d50<1.70の細孔径分布Db、≧10μmのd10値、≧18μmかつ≦32μmの細孔径中央値を、≧5.0×10−7/℃かつ≦15.0×10−7/℃のCTE(25〜800℃)値とともに有することが好ましい。CTEが<9×10−7/℃で、細孔径中央値d50が18μm≦d50≦30μmの範囲にあり、多孔度が66%<%多孔度<73%の範囲にある、セラミックがさらに一層好ましい。
Claims (7)
- 多孔度が65%より大きく75%未満であり、細孔径中央値(d50)が20μm以上28μm以下であり、25〜800℃における軸方向の平均熱膨張係数(CTE(25−800℃))が10.0×10 −7 /℃より大きく、d50をミクロン単位で表わし、CTE(25−800℃)を10−7/℃単位で表わしたときに、
関係式:0.5×(d50−24.0)<CTE(25−800℃)<0.5×(d50−5.0)を満足するものであって、
無セルのロッドまたはバーで測定して少なくとも500psi(3.45×106Pa)の破壊係数(MOR)曲げ強度を有するか、または有セルバーで測定して少なくとも500psiの破壊係数強度/前面閉鎖面積(MOR/CFA)比を有することを特徴とするコージエライトセラミック製品。 - 11μmより大きいd10値、及び50μm未満のd90値を有することを特徴とする請求項1記載のコージエライトセラミック製品。
- ハニカムウォールフローフィルタであることを特徴とする請求項1記載のコージエライトセラミック製品。
- 少なくとも0.10%の歪余裕(MOR/E)を有することを特徴とする請求項1記載のコージエライトセラミック製品。
- 少なくとも0.12%の歪余裕(MOR/E)を有し、(i)無セルのロッドまたはバーで測定して少なくとも600psi(4.14×106Pa)の破壊係数(MOR)曲げ強度を有するか、または(ii)有セルバーで測定して少なくとも600psiの破壊係数強度/前面閉鎖面積(MOR/CFA)比を有することを特徴とする請求項4記載のコージエライトセラミック製品。
- 少なくとも0.14%の歪余裕(MOR/E)を有し、(i)無セルのロッドまたはバーで測定して少なくとも700psi(4.14×106Pa)の破壊係数(MOR)曲げ強度を有するか、または(ii)有セルバーで測定して少なくとも700psiの破壊係数強度/前面閉鎖面積(MOR/CFA)比を有することを特徴とする請求項4記載のコージエライトセラミック製品。
- 多孔度が64%以上67.4%以下であり、細孔径中央値(d50)が10μm以上18μm未満であり、25〜800℃における平均熱膨張係数(CTE(25−800℃))が、6.0×10 −7 /℃未満であり、d 50 をミクロン単位で表わし、CTE(25−800℃)を10 −7 /℃単位で表わしたときに、25〜800℃における軸方向の平均熱膨張係数(CTE(25−800℃))が、
関係式:0.5×(d 50 −24.0)<CTE(25−800℃)<0.5×(d 50 −5.0)を満足するものであって、
無セルのロッドまたはバーで測定して少なくとも500psi(3.45×10 6 Pa)の破壊係数(MOR)曲げ強度を有するか、または有セルバーで測定して少なくとも500psiの破壊係数強度/前面閉鎖面積(MOR/CFA)比を有することを特徴とするコージエライトセラミック製品。
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US8679385B2 (en) * | 2010-11-29 | 2014-03-25 | Corning Incorporated | Method of forming porous ceramic articles using inert gas |
EP2995598B1 (en) | 2013-09-24 | 2022-04-13 | Hitachi Metals, Ltd. | Cordierite ceramic honeycomb structure |
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EP3386607A1 (en) | 2015-12-09 | 2018-10-17 | Corning Incorporated | Porous ceramic composition, filter, and articles |
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CN112969673A (zh) | 2018-08-31 | 2021-06-15 | 康宁股份有限公司 | 堇青石-印度石-铁板钛矿结构陶瓷体、批料组合物混合物及其制造陶瓷体的方法 |
MX2021005769A (es) | 2018-11-16 | 2021-10-13 | Corning Inc | Cuerpos de cerámica que contienen cordierita, mezclas de la composición de lotes, y métodos para fabricar cuerpos de cerámica que contienen cordierita. |
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JP3806975B2 (ja) | 1995-07-12 | 2006-08-09 | 株式会社デンソー | ハニカム構造体の製造方法 |
WO2000034202A1 (en) * | 1998-12-07 | 2000-06-15 | Corning Incorporated | Fabrication of ultra low thermal expansion cordierite structures |
JP2003040687A (ja) * | 2000-06-30 | 2003-02-13 | Ngk Insulators Ltd | ハニカムセラミックス構造体とその製造方法 |
JP4094830B2 (ja) * | 2000-11-24 | 2008-06-04 | 日本碍子株式会社 | 多孔質ハニカムフィルター及びその製造方法 |
JP3925225B2 (ja) * | 2001-03-28 | 2007-06-06 | 株式会社デンソー | 排ガス浄化フィルタ及びその製造方法 |
JP4094824B2 (ja) | 2001-04-04 | 2008-06-04 | 日本碍子株式会社 | ハニカム型セラミックス質フィルター |
JP3727550B2 (ja) * | 2001-05-30 | 2005-12-14 | 株式会社デンソー | 排ガス浄化フィルタ及びその製造方法 |
JP4007058B2 (ja) * | 2001-08-06 | 2007-11-14 | 株式会社デンソー | 排ガス浄化フィルタ |
US6827754B2 (en) * | 2001-09-13 | 2004-12-07 | Hitachi Metals, Ltd. | Ceramic honeycomb filter |
JP2003277162A (ja) * | 2002-01-21 | 2003-10-02 | Ngk Insulators Ltd | 多孔質ハニカム構造体、その用途及びその製造方法 |
US6864198B2 (en) * | 2003-01-30 | 2005-03-08 | Corning Incorporated | Cordierite ceramic body and method |
JP2004315346A (ja) * | 2003-03-28 | 2004-11-11 | Ngk Insulators Ltd | ハニカム構造体 |
US7179316B2 (en) * | 2003-06-25 | 2007-02-20 | Corning Incorporated | Cordierite filters with reduced pressure drop |
US7785385B2 (en) | 2003-08-29 | 2010-08-31 | Hitachi Metals, Ltd. | Ceramic honeycomb structure and moldable material usable for its extrusion molding |
US7442425B2 (en) * | 2003-09-30 | 2008-10-28 | Corning Incorporated | High porosity honeycomb and method |
WO2005068396A1 (ja) | 2004-01-13 | 2005-07-28 | Ngk Insulators, Ltd. | ハニカム構造体及びその製造方法 |
US7897099B2 (en) * | 2004-01-13 | 2011-03-01 | Ngk Insulators, Ltd. | Method for producing honeycomb structure |
JP4495152B2 (ja) * | 2004-03-31 | 2010-06-30 | 日本碍子株式会社 | ハニカム構造体及びその製造方法 |
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US20080004171A1 (en) | 2008-01-03 |
EP2043965A2 (en) | 2009-04-08 |
CN103482968A (zh) | 2014-01-01 |
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WO2008018957A3 (en) | 2008-06-26 |
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