JP5318881B2 - 微細多孔性の低微小亀裂化セラミックハニカムおよび方法 - Google Patents
微細多孔性の低微小亀裂化セラミックハニカムおよび方法 Download PDFInfo
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Description
さまざまな個々の1つ1つ、および集合的組合せについての具体的な言及およびこれらの化合物の置換について、はっきりと開示されていない場合にも、それぞれが明確に意図されており、本明細書に開示されている。よって、置換基の種類A、B、およびC、ならびに置換基の種類D、E、およびFと、組合せ実施の形態の例A−Dとが開示されている場合、それぞれが、個別に、および集合的に意図されている。つまり、この例では、A−E、A−F、B−D、B−E、B−F、C−D、C−E、およびC−Fの各組合せが、具体的に意図されており、A、BおよびC;D、EおよびF;ならびにA−Dの組合せ例の開示から、開示されているとみなされるべきである。同様に、これらの任意のサブセットまたは組合せも具体的に意図され、開示されている。よって、例えば、A−E、B−F、およびC−Eの下位群が具体的に意図されており、A、BおよびC;D、EおよびF;ならびにA−Dの組合せ例の開示から開示されているとみなされるべきである。この概念は、限定はしないが、組成物の任意の成分および開示する組成物の製造および使用方法における工程を含む、本開示の全ての実施の形態に適用される。よって、行われうるさまざまな追加の工程が存在する場合、これら追加の工程のそれぞれが、開示される方法の任意の特定の実施の形態または実施の形態の組合せで実施することができ、このような組合せのそれぞれが具体的に意図されており、開示されているとみなされるべきである。
I比=I(110)/[I(110)+I(002)] 式1
ここで、I(110)およびI(002)は、銅Kα放射を使用するXRDピークの六方晶系の指標付けに基づいた、コージエライト結晶格子における(110)および(002)の面からのXRDの反射のピークの高さである。「軸方向のI比」IAは、ハニカムの軸断面、すなわちチャネルの長さに直交する断面上のX線回折法によって測定される。「横軸のI比」ITは、直交する壁が除去された、ハニカム壁の焼成されたままの表面上で測定される。「粉末のI比」は、ハニカム標本を微細な粒径に微粉砕することによって調製される粉末上で測定される。粉末I比の値はまた、コージエライト結晶がランダムに配向されたI比を表し、約0.655である。
ΔCTEmc(IT)={34−26(IT)}+0.6(%SCP)−CTE25-800℃ 式2
ΔCTEmc(IA)={76.838(IA)3−129.5(IA)2+97.915(IA)−12.8}
+0.6(%SCP)−CTE25-800℃ 式3
ΔE°/ΔT=−7.5×10-5(E°25℃) 式4
ここで、上付き文字「°」を用いた弾性率用語(E°)は、非微小亀裂化状態のセラミックの弾性率を示す。非微小亀裂化コージエライト体では、1,200℃などの高温に加熱後に冷却する間の弾性率の温度依存性は、元来の加熱の間の温度依存性と実質的に同一であり、任意の所定の温度において、冷却する間の弾性率の値は、加熱の際の温度における値とほぼ同一である。これは、低微小亀裂化コージエライトセラミックについて、図1にも例証されている。
E°tangent=(E°25℃){1-7.5×10-5(T-25)} 式5
ここで、E°tangentは、接線に沿った各温度Tにおける非微小亀裂化体の弾性率を表す。
E=c+b(T)+a(T2) 式6
Ei=(E°25℃){1-7.5×10-5(Ti-25)}=c+b(Ti)+a(Ti 2) 式7
(E°25℃)(−7.5×10-5)=b+2a(Ti) 式8
(E°25℃)={b+2a(Ti)}/(−7.5×10-5) 式9
{{b+2a(Ti)}/(-7.5×10-5)}{1-7.5×10-5(Ti-25)}=c+b(Ti)+a(Ti 2) 式10
0={c+b(Ti)+a(Ti 2)}-{{b+2a(Ti)}/(-7.5×10-5)}{1-7.5×10-5(Ti-25)}
式11
0={c-{b/(−7.5×10-5)}{1+7.5×10-5(25)}}
+(Ti)(b)−(Ti){2a/(−7.5×10-5)}{1+7.5×10-5(25)}
−(Ti){{b/(−7.5×10-5)}{−7.5×10-5}}
+(Ti 2){a−{2a/(−7.5×10-5)}(−7.5×10-5)} 式12
0={c-{b/(-7.5×10-5)}{1+7.5×10-5(25)}}
+(Ti){-2a/(-7.5×10-5)}{1+7.5×10-5(25)}+(Ti 2)(-a) 式13
0=C+B(Ti)+A(Ti 2) 式14
ここで、C={c-{b/(-7.5×10-5)}{1+7.5×10-5(25)}}であり、
B={-2a/(-7.5×10-5)}{1+7.5×10-5(25)}であり、A=−aである。次に、Tiの値は二次方程式の解の公式:
Ti={−B+{B2−4(A)(C)}0.5}/2A 式15
を解くことによって得られる:
Ti={-B-{B2-4(A)(C)}0.5}/2A 式16
Nb3=(9/16){(E°25℃/E25℃)-1} 式17
Claims (4)
- 多孔質のセラミックハニカム体であって、
7.9μm未満のメジアン孔隙径d50と、
少なくとも50%の全孔隙率%Pと、
少なくとも0.10%の歪み耐性(MOR 25℃ /E 25℃ )と、
少なくとも450℃の熱衝撃パラメータ(TSP)と、
1.01を超えない弾性率の比Eratioと、
を有する主要コージエライトセラミック相を含み、
ここで、TSPは(MOR25℃/E25℃)(CTE500-900℃)-1であり、MOR25℃は25℃における破断強度であり、E25℃は25℃におけるヤング弾性率であり、CTE500-900℃は500℃〜900℃における高温熱膨張係数であり、Eratio=E900℃/E25℃であって、ここでE900℃は加熱の間に測定した900℃における弾性率である、
多孔質のセラミックハニカム体。 - 5μm以下のメジアン孔隙径d50と、
0.95以下のEratioと、
少なくとも450℃の熱衝撃パラメータ(TSP)と、
2.0×10-7/℃以下のΔCTEmc(IA)と、
を有する主要コージエライトセラミック相を含む、請求項1記載の多孔質のセラミックハニカム体。 - 請求項1記載の多孔質のセラミックハニカム体の製造方法であって、
15μm以下のメジアン粒径D50を有するタルク、8.0μm以下のメジアン粒径D50を有する、α−アルミナ、γ−アルミナ、遷移アルミナ、水酸化アルミニウム、ベーマイト、ダイアスポア、アルミニウムイソプロポキシド、またはそれらの組合せから選択されるアルミナ形成源、および15μm以下のメジアン粒径D50を有する、結晶性シリカ、非結晶性シリカ、またはそれらの組合せから選択されるシリカ形成源、を含む無機粉末バッチ混合物と、
少なくとも0.5重量%の、希土類元素の化合物から選択される少なくとも1種類のガラス形成金属酸化物源と、
有機結合剤と、
液体溶媒と、
を含んでなる可塑化セラミック形成前駆体バッチ組成物を提供する工程と、
前記可塑化コージエライト前駆体バッチ組成物からハニカム未焼成体を形成する工程と、
前記ハニカム未焼成体を焼成して、前記多孔質のセラミックハニカム体を形成する工程と、を有してなる方法。 - 前記可塑化セラミック形成前駆体バッチ組成物が、
10μm以下のメジアン粒径D50を有するタルク、8μm以下のメジアン粒径D50を有する、α−アルミナ、γ−アルミナ、遷移アルミナ、水酸化アルミニウム、ベーマイト、またはそれらの組合せから選択されるアルミナ形成源、および10μm以下のメジアン粒径D50を有する結晶性シリカから選択されるシリカ形成源を含んでなる無機粉末バッチ混合物と、
少なくとも0.5重量%のガラス形成酸化イットリウム源と、
15μm以下のメジアン粒径D50を有する随意的な微粒子孔隙形成剤と、
を含むことを特徴とする請求項3記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/986,958 | 2007-11-27 | ||
US11/986,958 US7704296B2 (en) | 2007-11-27 | 2007-11-27 | Fine porosity low-microcracked ceramic honeycombs and methods thereof |
PCT/US2008/012862 WO2009070218A2 (en) | 2007-11-27 | 2008-11-17 | Fine porosity low-microcracked ceramic honeycombs and methods thereof |
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JP2011504869A JP2011504869A (ja) | 2011-02-17 |
JP5318881B2 true JP5318881B2 (ja) | 2013-10-16 |
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