JP5685880B2 - ワイヤボンドの接合構造 - Google Patents
ワイヤボンドの接合構造 Download PDFInfo
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- JP5685880B2 JP5685880B2 JP2010232351A JP2010232351A JP5685880B2 JP 5685880 B2 JP5685880 B2 JP 5685880B2 JP 2010232351 A JP2010232351 A JP 2010232351A JP 2010232351 A JP2010232351 A JP 2010232351A JP 5685880 B2 JP5685880 B2 JP 5685880B2
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2924/30107—Inductance
Description
以下、本発明におけるワイヤボンドの接合構造を具体化した第1参考形態につき図面を参照して詳細に説明する。
次に、本発明におけるワイヤボンドの接合構造を具体化した第2参考形態につき図面を参照して詳細に説明する。
次に、本発明におけるワイヤボンドの接合構造を具体化した第1実施形態につき図面を参照して詳細に説明する。
次に、本発明におけるワイヤボンドの接合構造を具体化した第2実施形態につき図面を参照して詳細に説明する。
例えば、前記第1実施形態では、図4に示すように、上段支持部14に凹部17を形成したが、図13に示すように、上段支持部14の凹部17の中に仕切壁等の脚部17aを設けることもできる。この場合、脚部17aが下段バスバ部材5の上面に当接して上段支持部14の凹部17の上壁14aが支持される。この結果、上段バスバ部材6に上から荷重がかかったときに、凹部17の上壁14aの強度を高めることができる。
6 上段バスバ部材(第1の)
9 下段バスバ部材(第2の)
10 上段バスバ部材(第2の)
11 下段バスバ(第1の)
11a 延長バスバ
12 下段支持部(第1の)
13 上段バスバ(第1の)
13a 接続端子
14 上段支持部(第1の)
15 下段ワイヤ(第1の)
15a 接合部
16 上段ワイヤ(第1の)
16a 接合部
16b 接合部
17 凹部
17a 脚部
26 半導体素子
31 下段バスバ(第2の)
31a 延長バスバ
32 下段支持部(第2の)
33 上段バスバ(第2の)
34 上段支持部(第2の)
36 上段ワイヤ(第2の)
Claims (1)
- バスバを多段構造に構成し、前記バスバにワイヤを接合するワイヤボンドの接合構造において、
上段バスバ及びそれを支持する上段支持部を含む上段バスバ部材が、下段バスバ及びそれを支持する下段支持部を含む下段バスバ部材と別体に構成され、
前記下段バスバと下段ワイヤとが接合され、前記上段バスバ部材が前記下段バスバ部材に固定され、前記上段バスバと上段ワイヤとが接合されたこと、
前記上段バスバの投影面が前記下段バスバの投影面に重なるよう、前記下段バスバ部材の上面と、前記上段バスバ部材の下面とが密着して配置されていること、
前記下段バスバ部材の上面に前記上段バスバ部材が固定されると共に、前記上段支持部の一部であって、前記下段バスバ部材との密着面に、前記下段ワイヤとの干渉を避けるための凹部が形成されたこと、
前記上段支持部の前記凹部の中に、少なくとも一つの脚部が設けられたこと、
前記下段バスバ部材の上面に当接して前記上段支持部の前記凹部の上壁が、前記脚部により支持されていること、
を特徴とするワイヤボンドの接合構造。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010232351A JP5685880B2 (ja) | 2010-10-15 | 2010-10-15 | ワイヤボンドの接合構造 |
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JP2010232351A JP5685880B2 (ja) | 2010-10-15 | 2010-10-15 | ワイヤボンドの接合構造 |
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JP2012089548A JP2012089548A (ja) | 2012-05-10 |
JP5685880B2 true JP5685880B2 (ja) | 2015-03-18 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5893369B2 (ja) * | 2011-12-05 | 2016-03-23 | ローム株式会社 | 半導体装置 |
JP5921949B2 (ja) * | 2012-05-12 | 2016-05-24 | 日本インター株式会社 | パワー半導体モジュール |
JP5880906B2 (ja) * | 2012-09-26 | 2016-03-09 | トヨタ自動車株式会社 | 電気部品 |
JP6136660B2 (ja) * | 2013-07-02 | 2017-05-31 | 住友電気工業株式会社 | 半導体モジュール |
JP6136658B2 (ja) * | 2013-07-02 | 2017-05-31 | 住友電気工業株式会社 | 半導体モジュール |
US11749578B2 (en) * | 2019-02-22 | 2023-09-05 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor module, power semiconductor module, and power electronic equipment using the semiconductor module or the power semiconductor module |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2001308265A (ja) * | 2000-04-21 | 2001-11-02 | Toyota Industries Corp | 半導体装置 |
JP4277169B2 (ja) * | 2003-01-06 | 2009-06-10 | 富士電機デバイステクノロジー株式会社 | 電力用半導体モジュール |
JP2007042796A (ja) * | 2005-08-02 | 2007-02-15 | Toshiba Corp | 電力用半導体素子及びインバータ装置 |
JP5136343B2 (ja) * | 2008-10-02 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
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