JP5684455B2 - 成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法 - Google Patents

成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法 Download PDF

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JP5684455B2
JP5684455B2 JP2008554403A JP2008554403A JP5684455B2 JP 5684455 B2 JP5684455 B2 JP 5684455B2 JP 2008554403 A JP2008554403 A JP 2008554403A JP 2008554403 A JP2008554403 A JP 2008554403A JP 5684455 B2 JP5684455 B2 JP 5684455B2
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nitride semiconductor
semipolar
concentration
iii nitride
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JP2009526405A (ja
JP2009526405A5 (enExample
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ジョン エフ． ケディング，
ジョン エフ． ケディング，
佐藤　均
均 佐藤
マイケル イザ，
マイケル イザ，
啓州 浅水
啓州 浅水
ホン チョン，
ホン チョン，
スティーブン ピー． デンバース，
スティーブン ピー． デンバース，
シュウジ ナカムラ，
シュウジ ナカムラ，
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University of California
University of California Berkeley
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University of California San Diego UCSD
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
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JP2008554403A 2006-02-10 2007-02-09 成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法 Active JP5684455B2 (ja)

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US77218406P 2006-02-10 2006-02-10
US60/772,184 2006-02-10
PCT/US2007/003607 WO2007095137A2 (en) 2006-02-10 2007-02-09 Method for conductivity control of (al,in,ga,b)n

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JP2013081851A Division JP2013191851A (ja) 2006-02-10 2013-04-10 （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法
JP2014245563A Division JP2015046640A (ja) 2006-02-10 2014-12-04 （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法

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JP2013081851A Pending JP2013191851A (ja) 2006-02-10 2013-04-10 （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法
JP2014245563A Withdrawn JP2015046640A (ja) 2006-02-10 2014-12-04 （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法

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JP2014245563A Withdrawn JP2015046640A (ja) 2006-02-10 2014-12-04 （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法

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