JP2009526405A5 - - Google Patents
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- JP2009526405A5 JP2009526405A5 JP2008554403A JP2008554403A JP2009526405A5 JP 2009526405 A5 JP2009526405 A5 JP 2009526405A5 JP 2008554403 A JP2008554403 A JP 2008554403A JP 2008554403 A JP2008554403 A JP 2008554403A JP 2009526405 A5 JP2009526405 A5 JP 2009526405A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semipolar
- concentration
- iii nitride
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000004767 nitrides Chemical class 0.000 claims description 131
- 239000004065 semiconductor Substances 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 69
- 239000013078 crystal Substances 0.000 claims description 58
- 239000011777 magnesium Substances 0.000 claims description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 51
- 229910002601 GaN Inorganic materials 0.000 claims description 46
- 239000002019 doping agent Substances 0.000 claims description 45
- 229910052738 indium Inorganic materials 0.000 claims description 41
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 23
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 239000011029 spinel Substances 0.000 claims description 7
- 229910052596 spinel Inorganic materials 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 229910020068 MgAl Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000010287 polarization Effects 0.000 description 20
- 230000008901 benefit Effects 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 230000005693 optoelectronics Effects 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77218406P | 2006-02-10 | 2006-02-10 | |
| US60/772,184 | 2006-02-10 | ||
| PCT/US2007/003607 WO2007095137A2 (en) | 2006-02-10 | 2007-02-09 | Method for conductivity control of (al,in,ga,b)n |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013081851A Division JP2013191851A (ja) | 2006-02-10 | 2013-04-10 | （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法 |
| JP2014245563A Division JP2015046640A (ja) | 2006-02-10 | 2014-12-04 | （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009526405A JP2009526405A (ja) | 2009-07-16 |
| JP2009526405A5 true JP2009526405A5 (enExample) | 2015-01-29 |
| JP5684455B2 JP5684455B2 (ja) | 2015-03-11 |
Family
ID=38372037
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008554403A Active JP5684455B2 (ja) | 2006-02-10 | 2007-02-09 | 成長中にｐ型ドーパントがドープされたｐ型半極性ＩＩＩ窒化物半導体を使用して、該ＩＩＩ窒化物デバイスまたはＩＩＩ窒化物半導体を製造する方法、半極性ＩＩＩ窒化物半導体、および、ｐ型ＩＩＩ窒化物半導体を製造する方法 |
| JP2013081851A Pending JP2013191851A (ja) | 2006-02-10 | 2013-04-10 | （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法 |
| JP2014245563A Withdrawn JP2015046640A (ja) | 2006-02-10 | 2014-12-04 | （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013081851A Pending JP2013191851A (ja) | 2006-02-10 | 2013-04-10 | （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法 |
| JP2014245563A Withdrawn JP2015046640A (ja) | 2006-02-10 | 2014-12-04 | （Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎの伝導性制御方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US8193079B2 (enExample) |
| EP (1) | EP1984940A4 (enExample) |
| JP (3) | JP5684455B2 (enExample) |
| KR (1) | KR101416838B1 (enExample) |
| WO (1) | WO2007095137A2 (enExample) |
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| CN101845670A (zh) * | 2005-03-10 | 2010-09-29 | 加利福尼亚大学董事会 | 用于生长平坦半极性氮化镓的技术 |
| JP5743127B2 (ja) | 2005-06-01 | 2015-07-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 半極性（Ｇａ，Ａｌ，Ｉｎ，Ｂ）Ｎ薄膜、ヘテロ構造およびデバイスの成長と作製のための方法及び装置 |
| WO2007098215A2 (en) * | 2006-02-17 | 2007-08-30 | The Regents Of The University Of California | Method for growth of semipolar (al,in,ga,b)n optoelectronic devices |
| WO2008060349A2 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
| US8193020B2 (en) * | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
| JP2010512664A (ja) * | 2006-12-11 | 2010-04-22 | ルーメンツ リミテッド ライアビリティ カンパニー | 酸化亜鉛多接合光電池及び光電子装置 |
| US8458262B2 (en) * | 2006-12-22 | 2013-06-04 | At&T Mobility Ii Llc | Filtering spam messages across a communication network |
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| KR20100134089A (ko) * | 2008-04-04 | 2010-12-22 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 평면의 반극성 (Ａｌ, Ｉｎ, Ｇａ, Ｂ)Ｎ계 발광 다이오드들에 대한 ＭＯＣＶＤ 성장 기술 |
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2007
- 2007-02-09 KR KR1020087021910A patent/KR101416838B1/ko active Active
- 2007-02-09 EP EP07750442A patent/EP1984940A4/en not_active Withdrawn
- 2007-02-09 WO PCT/US2007/003607 patent/WO2007095137A2/en not_active Ceased
- 2007-02-09 US US11/673,426 patent/US8193079B2/en active Active
- 2007-02-09 JP JP2008554403A patent/JP5684455B2/ja active Active
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2012
- 2012-04-05 US US13/440,234 patent/US8709925B2/en active Active
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2013
- 2013-04-10 JP JP2013081851A patent/JP2013191851A/ja active Pending
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2014
- 2014-03-12 US US14/205,947 patent/US20140191244A1/en not_active Abandoned
- 2014-12-04 JP JP2014245563A patent/JP2015046640A/ja not_active Withdrawn
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