JP5681453B2 - 測定方法および測定装置 - Google Patents
測定方法および測定装置 Download PDFInfo
- Publication number
- JP5681453B2 JP5681453B2 JP2010249431A JP2010249431A JP5681453B2 JP 5681453 B2 JP5681453 B2 JP 5681453B2 JP 2010249431 A JP2010249431 A JP 2010249431A JP 2010249431 A JP2010249431 A JP 2010249431A JP 5681453 B2 JP5681453 B2 JP 5681453B2
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- JP
- Japan
- Prior art keywords
- protective film
- thickness
- measuring
- light
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 45
- 230000001681 protective effect Effects 0.000 claims description 199
- 238000012545 processing Methods 0.000 claims description 97
- 230000002745 absorbent Effects 0.000 claims description 44
- 239000002250 absorbent Substances 0.000 claims description 44
- 230000008859 change Effects 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 230000001678 irradiating effect Effects 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 12
- 238000000691 measurement method Methods 0.000 claims description 11
- 239000006096 absorbing agent Substances 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 5
- 239000002699 waste material Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 123
- 238000005259 measurement Methods 0.000 description 79
- 230000007246 mechanism Effects 0.000 description 36
- 230000008569 process Effects 0.000 description 26
- 230000003287 optical effect Effects 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000005755 formation reaction Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 6
- 230000007723 transport mechanism Effects 0.000 description 5
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004597 plastic additive Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8483—Investigating reagent band
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Molecular Biology (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Length Measuring Devices By Optical Means (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010249431A JP5681453B2 (ja) | 2010-11-08 | 2010-11-08 | 測定方法および測定装置 |
KR1020110111167A KR101844071B1 (ko) | 2010-11-08 | 2011-10-28 | 측정 방법 및 측정 장치 |
CN201110346590.XA CN102564327B (zh) | 2010-11-08 | 2011-11-04 | 测定方法及测定装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010249431A JP5681453B2 (ja) | 2010-11-08 | 2010-11-08 | 測定方法および測定装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012104533A JP2012104533A (ja) | 2012-05-31 |
JP5681453B2 true JP5681453B2 (ja) | 2015-03-11 |
Family
ID=46267161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010249431A Active JP5681453B2 (ja) | 2010-11-08 | 2010-11-08 | 測定方法および測定装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5681453B2 (zh) |
KR (1) | KR101844071B1 (zh) |
CN (1) | CN102564327B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6037892B2 (ja) * | 2013-02-26 | 2016-12-07 | 株式会社ディスコ | 保護膜の厚さ測定方法 |
CN103606528B (zh) * | 2013-10-23 | 2016-03-23 | 上海华力微电子有限公司 | 生长钨前的硅片检测装置和方法 |
JP6244843B2 (ja) * | 2013-11-14 | 2017-12-13 | 三菱ケミカル株式会社 | 繊維束の監視方法、この監視方法を用いた監視装置及び、この監視方法または監視装置を用いた繊維束の製造方法 |
JP6478728B2 (ja) * | 2015-03-11 | 2019-03-06 | 株式会社ディスコ | 保護膜検出方法 |
JP6624919B2 (ja) * | 2015-12-18 | 2019-12-25 | 株式会社ディスコ | レーザー加工用保護膜検出方法 |
JP2017227532A (ja) * | 2016-06-22 | 2017-12-28 | 株式会社ディスコ | 蛍光検出装置 |
JP6688695B2 (ja) * | 2016-06-24 | 2020-04-28 | 株式会社ディスコ | 保護膜被覆装置および保護膜被覆方法 |
JP6764322B2 (ja) * | 2016-11-22 | 2020-09-30 | 株式会社ディスコ | デバイスウェーハの加工方法 |
JP6775036B2 (ja) * | 2017-02-07 | 2020-10-28 | 東京エレクトロン株式会社 | 成膜システム、成膜方法及びコンピュータ記憶媒体 |
US10236222B2 (en) * | 2017-02-08 | 2019-03-19 | Kla-Tencor Corporation | System and method for measuring substrate and film thickness distribution |
WO2019174709A1 (de) | 2018-03-12 | 2019-09-19 | Celonis Se | Verfahren zur behebung von prozessanomalien |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6243503A (ja) * | 1985-08-20 | 1987-02-25 | Toyota Motor Corp | メタリツク塗装クリヤ−塗膜の膜厚測定法 |
JP3624476B2 (ja) * | 1995-07-17 | 2005-03-02 | セイコーエプソン株式会社 | 半導体レーザ装置の製造方法 |
IL125964A (en) * | 1998-08-27 | 2003-10-31 | Tevet Process Control Technolo | Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate |
EP1430270A4 (en) * | 2001-09-21 | 2006-10-25 | Kmac | METHOD AND DEVICE FOR MEASURING THE THICK PROFILE AND THE DISTRIBUTION OF THIN FILM MULTI-LAYER REFRACTIVE INDICES BY TWO-DIMENSIONAL REFLECTOMETRY |
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
KR100665003B1 (ko) | 2004-12-07 | 2007-01-09 | 삼성전기주식회사 | 금속표면 상의 유기도막 두께 측정방법 |
JP5065722B2 (ja) * | 2007-03-23 | 2012-11-07 | 株式会社ディスコ | レーザー加工装置 |
US20090107399A1 (en) * | 2007-10-29 | 2009-04-30 | Harald Bloess | System and Method of Measuring Film Height on a Substrate |
-
2010
- 2010-11-08 JP JP2010249431A patent/JP5681453B2/ja active Active
-
2011
- 2011-10-28 KR KR1020110111167A patent/KR101844071B1/ko active IP Right Grant
- 2011-11-04 CN CN201110346590.XA patent/CN102564327B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102564327B (zh) | 2016-09-14 |
KR20120049132A (ko) | 2012-05-16 |
KR101844071B1 (ko) | 2018-03-30 |
CN102564327A (zh) | 2012-07-11 |
JP2012104533A (ja) | 2012-05-31 |
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