JP6775036B2 - 成膜システム、成膜方法及びコンピュータ記憶媒体 - Google Patents
成膜システム、成膜方法及びコンピュータ記憶媒体 Download PDFInfo
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- JP6775036B2 JP6775036B2 JP2018566798A JP2018566798A JP6775036B2 JP 6775036 B2 JP6775036 B2 JP 6775036B2 JP 2018566798 A JP2018566798 A JP 2018566798A JP 2018566798 A JP2018566798 A JP 2018566798A JP 6775036 B2 JP6775036 B2 JP 6775036B2
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Description
本願は、2017年2月7日に日本国に出願された特願2017−20253号に基づき、優先権を主張し、その内容をここに援用する。
特許文献1に開示の方法では、表面にパターンが形成されたウェハ上に有機材料を塗布し、有機材料を熱処理してウェハ上に有機膜を形成する。そして、有機膜に対して紫外線を照射し、パターンの表面が露出するまで、当該有機膜の表面を除去し、すなわちエッチバックし、これにより平坦化が図られている。
別な観点による本発明の一態様は、表面にパターンが形成された基板上に有機膜を形成する成膜システムであって、基板に対して有機膜形成処理を行い、基板上に有機膜を形成する有機膜形成部と、基板上の有機膜の膜厚を測定する膜厚測定部と、基板上の有機膜に対して紫外線照射処理を行い、該有機膜の表面を除去する紫外線処理部と、基板上の有機膜の膜厚を測定する別の膜厚測定部と、を備え、前記有機膜形成部、前記膜厚測定部、前記紫外線処理部が、基板の搬送方向に沿って、この順に並べて設けられ、当該成膜システムに対して基板を搬入出するための搬入出部と、前記別の膜厚測定部と、前記有機膜形成部が、基板の搬送方向に沿って、この順に並べて設けられている。
図1は、第1の実施形態にかかる成膜システム1の内部構成の概略を示す説明図である。図2及び図3は、成膜システム1の内部構成の概略を示す側面図である。なお、以下では、成膜システム1が、基板としてのウェハW上に有機膜としてのSOC膜を形成する例で説明する。成膜システム1が成膜するSOC膜の厚さは、数十μm〜数十nmである。なお、成膜システム1で処理されるウェハ上には予めシリコン酸化膜(SiO2膜)等の所定のパターンが形成されている。
また、紫外線照射部141から照射する紫外線の波長は、本実施の形態ではピーク波長が172nmのものであったが、特にこの波長に限定されず、ピーク波長が200nm以下のものであればよく、例えば、193nmのものであってもよい。ピーク波長が172nmや193nmの紫外線であれば活性酸素及びオゾンを効率よく生成し得る。
その後、ウェハWは、ウェハ搬送装置70によって受け渡しユニット50に搬送され、ウェハ搬送装置21によってカセットCに戻される。
続いて、本実施の形態にかかる成膜システム1で行うことが可能な紫外線照射処理時の処理条件の決定方法、すなわち、紫外線照射処理の条件出し方法について説明する。図13は、紫外線照射処理の条件出し方法を説明する模式図である。
次いで、上述の工程S3と同様にして、紫外線処理ユニット80において紫外線照射部141による紫外線照射処理が行われ、ウェハW上の有機膜の表面が除去される(除去工程K2)。最初の紫外線照射処理時の処理条件すなわち紫外線照射処理時の初期条件は予め定められている。なお、紫外線照射処理時の処理条件とは例えば照射時間、出力(ドーズ量)、処理容器130内の酸素濃度等である。処理条件としての酸素濃度は、0.01〜80%の範囲で定められる。
また、測定の結果、所定の条件を満たさない場合、すなわち、例えばウェハWの第1の領域Aに有機膜が残っている場合、上述の除去工程K2が再度行われ、ウェハWは、再度紫外線処理ユニット80に搬送され、紫外線処理ユニット80において紫外線照射部141による紫外線照射処理が行われ、ウェハW上の有機膜の表面がさらに除去される。この際の除去量、すなわちエッチバック量/エッチバックする時間は、残っている有機膜の厚さ及び該有機膜のエッチングレートから算出してもよいし、予め定められた時間であってもよい。
この除去工程K2と膜厚測定工程K3が、ウェハWが所定の条件を満たすまで繰り返される。
そして、所定の条件を満たすようになった場合、それまでに行われた除去工程での紫外線照射時間の和が、紫外線照射処理時の処理条件として決定される。
続いて、成膜システム1を用いた、量産運用時の有機膜の成膜方法の一例を、図14を用いて説明する。
次いで、上述の工程S3と同様にして、紫外線処理ユニット80において紫外線照射部141による紫外線照射処理が行われ、ウェハW上の有機膜の表面が除去される(工程S11)。
そして、測定の結果が所定の条件(例えばウェハWの第1の領域Aの膜厚が0であるという条件)を満たすか否か判断される(工程S13)。
この成膜方法によれば、確実にウェハW上の有機膜を除去することができ、一定の品質で成膜することができる。
続いて、成膜システム1を用いた、量産運用時の有機膜の成膜方法の他の例を、図15を用いて説明する。
次いで、各ウェハWは、ウェハ搬送装置70によって第1の膜厚測定ユニット61に搬送され、各ウェハW上の有機膜の膜厚が測定される(第1の膜厚測定工程K12)。
除去後、各ウェハWは、ウェハ搬送装置73によって第1の膜厚測定ユニット61に搬送され、除去後の有機膜の膜厚が測定される(第2の膜厚測定工程K14)。
追加の有機膜形成処理後、各ウェハWは、ウェハ搬送装置70によって第1の膜厚測定ユニット61に搬送され、追加の有機膜形成処理後のウェハW上の有機膜の膜厚が測定される(第3の膜厚測定工程K16)。
その後、ウェハWは、ウェハ搬送装置70によって受け渡しユニット50に搬送され、ウェハ搬送装置21によってカセットCに戻される。
また、QC時にはより正確に膜厚を測定できる第1の膜厚測定ユニット61を使用し、定常時にはより高速に膜厚を測定できる第2の膜厚測定ユニット62を使用するため、品質管理を正確に行うことができると共に、均一な品質の成膜を短時間で量産することができる。
図15の例では、有機膜形成工程K11後に、有機膜の膜厚を測定し、その測定結果を有機膜形成工程K11にフィードバックしていた。
しかし、有機膜形成工程K11と除去工程K13との間の膜厚測定工程を省略し、除去工程K13と追加の有機膜形成工程K15との間の膜厚測定工程での測定結果を、除去工程K13にフィードバックせず、有機膜形成工程K11にフィードバックするようにしてもよい。
これにより、一連の成膜処理に要する時間を短くすることができる。
続いて、成膜システム1を用いた、量産運用時の有機膜の成膜方法の他の例を、図16を用いて説明する。
量産運用中の有機膜形成工程や除去工程、追加の有機膜形成工程での適切な処理条件は、ウェハW上のパターンの種類や有機膜の原料となる有機材料の種類に応じて異なり、従来は、実際に各工程を行い、その結果に基づき上記処理条件の条件出しを行い、予め決定されていた。
それに対し、本方法において、処理条件は、予め決定されず、ウェハWのパターンの情報に基づいてシミュレーションにより決定される。
次いで、上述の工程S1及びS2と同様にして、フィードフォワードされた処理条件に基づいて、ウェハW上に有機膜が形成される(有機膜形成工程K22)。
そして、ウェハWは、ウェハ搬送装置70によって第1の膜厚測定ユニット61または第2の膜厚測定ユニット62に搬送され、ウェハW上の有機膜の膜厚が測定される(第1の膜厚測定工程K23)。
除去後、ウェハWは、ウェハ搬送装置73によって第1の膜厚測定ユニット61または第2の膜厚測定ユニット62に搬送され、除去後の有機膜の膜厚が測定される(第2の膜厚測定工程K25)。
追加の有機膜形成処理後、ウェハWは、ウェハ搬送装置70によって第1の膜厚測定ユニット61または第2の膜厚測定ユニット62に搬送され、追加の有機膜形成処理後のウェハW上の有機膜の膜厚が測定される(第3の膜厚測定工程K27)。
その後、ウェハWは、ウェハ搬送装置70によって受け渡しユニット50に搬送され、ウェハ搬送装置21によってカセットCに戻される。
第1の膜厚測定ユニット61または第2の膜厚測定ユニット62を用いて、塗布処理ユニット30でのウェハWへの塗布処理後、熱処理ユニット40での熱処理前に、ウェハW上の有機液の塗布膜の厚さを測定し、測定結果に基づいて、熱処理ユニット40での熱処理時の処理条件を調整してもよい。
この疎密度合と膜厚測定結果に基づいて、有機膜形成処理や、紫外線照射処理、追加の有機膜形成処理での処理条件の条件出しを行ったり調整したりしてもよいし、また、別の処理を行ってもよい。
図17は、第2の実施形態にかかる成膜システム1の内部構成の概略を示す側面図である。
図17の成膜システム1は、図1等の成膜システム1とは異なり、第1及び第2の膜厚測定ユニット61、62とは別の膜厚測定ユニット300を備える。この別の膜厚測定ユニット300は、カセット搬入出部10から構成される基板半入出部と、当該別の膜厚測定ユニット300から構成される別の膜厚測定部と、塗布処理ユニット30及び熱処理ユニット40から構成される有機膜形成部と、がウェハWの搬送方向に沿って、この順に並べられるように配設されている。
また、以上の説明では、同一ウェハWへの有機膜形成処理は2回までであったが、本発明は有機膜生成処理を3回以上行う場合にも適用することができる。
6…制御部
10…カセット搬入出部
30…塗布処理ユニット
40…熱処理ユニット
61…第1の膜厚測定ユニット
62…第2の膜厚測定ユニット
80…紫外線処理ユニット
140…熱処理部
141…紫外線照射部
300…別の膜厚測定ユニット
Claims (14)
- 表面にパターンが形成された基板上に有機膜を形成する成膜システムであって、
基板に対して有機膜形成処理を行い、基板上に有機膜を形成する有機膜形成部と、
基板上の有機膜の膜厚を測定する膜厚測定部と、
基板上の有機膜に対して紫外線照射処理を行い、該有機膜の表面を除去する紫外線処理部と、
前記有機膜形成部、前記膜厚測定部及び前記紫外線処理部を制御する制御部と、を備え、
前記制御部は、前記有機膜形成部の有機膜形成処理によって形成され前記紫外線処理部によって表面が除去された有機膜の膜厚を前記膜厚測定部が測定するよう制御すると共に、測定結果に基づき、有機膜形成処理時の処理条件を調整する。 - 表面にパターンが形成された基板上に有機膜を形成する成膜システムであって、
基板に対して有機膜形成処理を行い、基板上に有機膜を形成する有機膜形成部と、
基板上の有機膜の膜厚を測定する膜厚測定部と、
基板上の有機膜に対して紫外線照射処理を行い、該有機膜の表面を除去する紫外線処理部と、
基板上の有機膜の膜厚を測定する別の膜厚測定部と、を備え、
前記有機膜形成部、前記膜厚測定部、前記紫外線処理部が、基板の搬送方向に沿って、この順に並べて設けられ、
当該成膜システムに対して基板を搬入出するための搬入出部と、前記別の膜厚測定部と、前記有機膜形成部が、基板の搬送方向に沿って、この順に並べて設けられている。 - 請求項1に記載の成膜システムにおいて、
前記制御部は、
前記有機膜形成部が基板に対して有機膜形成処理を行い基板上に有機膜を形成し、該有機膜の表面を前記紫外線処理部が除去し、該表面が除去された有機膜の膜厚を前記膜厚測定部が測定するよう制御すると共に、
前記膜厚測定部での測定結果が所定の条件を満たさない場合に、前記紫外線処理部が、前記表面が除去された有機膜の表面をさらに除去する。 - 請求項3に記載の成膜システムにおいて、
前記制御部は、前記膜厚測定部での測定結果が所定の条件を満たす場合に、前記有機膜形成部が、前記表面が除去された有機膜に対して、追加の有機膜形成処理を行うよう制御する。 - 請求項1、3、4のいずれか1項に記載の成膜システムにおいて、
前記制御部は、前記表面が除去された有機膜に対する前記有機膜形成部による追加の有機膜形成処理後の有機膜の膜厚を前記膜厚測定部が測定するよう制御すると共に、測定結果に基づき、追加の有機膜形成処理時の処理条件を調整する。 - 請求項1〜5のいずれか1項に記載の成膜システムにおいて、
前記膜厚測定部は、スキャトロメトリ法を用いて膜厚を測定する第1の測定部と、撮像画像に基づいて膜厚を測定する第2の測定部と、を有する。 - 請求項4に記載の成膜システムにおいて、
前記制御部は、
基板上のパターンに係る情報に基づき、有機膜形成処理時の処理条件、紫外線照射処理の処理条件及び追加の有機膜形成処理時の処理条件のうちの少なくともいずれか1つを算出し、
算出結果に係る処理条件での処理後の有機膜の膜厚を前記膜厚測定部が測定するよう制御すると共に、測定結果に基づき、前記算出結果に係る処理条件を調整する。 - 表面にパターンが形成された基板上に有機膜を形成する成膜方法であって、
基板に対して有機膜形成処理を行い、基板上に有機膜を形成する工程と、
有機膜形成処理により形成された有機膜の表面を紫外線照射処理により除去する除去工程と、
該除去工程により表面が除去された有機膜の膜厚を測定する膜厚測定工程と、
該膜厚測定工程での測定結果が所定の条件を満たさない場合に、前記表面が除去された有機膜の表面をさらに除去する追加除去工程と、
基板上のパターンに係る情報に基づき、有機膜形成処理時の処理条件、紫外線照射処理時の処理条件及び追加の有機膜形成処理時の処理条件のうちの少なくともいずれか1つを算出する工程と、
算出結果に係る処理条件での処理後の有機膜の膜厚を測定する工程と、を含み、
前記算出結果に係る処理条件での処理後の有機膜の膜厚を測定する工程での測定結果に基づき、前記算出結果に係る処理条件を調整する。 - 請求項8に記載の成膜方法において、
該膜厚測定工程での測定結果が所定の条件を満たす場合に、前記表面が除去された有機膜に対して、追加の有機膜形成処理を行う工程を含む。 - 請求項8または9に記載の成膜方法において、
前記追加除去工程での除去量は、前記膜厚測定工程での測定結果に基づいて算出される。 - 表面にパターンが形成された基板上に有機膜を形成する成膜方法であって、
基板に対して有機膜形成処理を行い、基板上に有機膜を形成する工程と、
有機膜形成処理により形成された有機膜の表面を紫外線照射処理により除去する工程と、
基板上の有機膜の膜厚を測定する膜厚測定工程と、を含み、
前記膜厚測定工程は、紫外線照射処理によって表面が除去された有機膜の膜厚を測定する工程を含み、
該工程での測定結果に基づき、有機膜形成処理時の処理条件を調整する。 - 請求項11に記載の成膜方法において、
前記表面が除去された有機膜に対して、追加の有機膜形成処理を行う工程を含み、
前記膜厚測定工程は、前記追加の有機膜形成処理後の有機膜の膜厚を測定する追加測定工程を含み、
該追加測定工程での測定結果に基づき、追加の有機膜形成処理時の処理条件を調整する。 - 請求項8〜12のいずれか1項に記載の成膜方法において、
前記膜厚測定工程は、スキャトロメトリ法を用いて膜厚を測定する工程と、
撮像画像に基づいて膜厚を測定する工程と、を含む。 - 請求項8〜13のいずれか1項に記載の成膜方法を成膜システムによって実行させるように、当該成膜システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体。
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