JP5680090B2 - Ｇａｓｂ充填スクッテルダイト複合材料、およびその製造方法 - Google Patents

Ｇａｓｂ充填スクッテルダイト複合材料、およびその製造方法 Download PDF

Info

Publication number
JP5680090B2
JP5680090B2 JP2012532196A JP2012532196A JP5680090B2 JP 5680090 B2 JP5680090 B2 JP 5680090B2 JP 2012532196 A JP2012532196 A JP 2012532196A JP 2012532196 A JP2012532196 A JP 2012532196A JP 5680090 B2 JP5680090 B2 JP 5680090B2
Authority
JP
Japan
Prior art keywords
gasb
composite material
matrix
filled skutterudite
thermoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012532196A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013506312A (ja
Inventor
チェン，リードン
チェン，シーホン
ハァ，リン
ホアン，シアンヤン
シォン，ヂェン
ヂャン，ウェンチン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Ceramics
Original Assignee
Shanghai Institute of Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Ceramics filed Critical Shanghai Institute of Ceramics
Publication of JP2013506312A publication Critical patent/JP2013506312A/ja
Application granted granted Critical
Publication of JP5680090B2 publication Critical patent/JP5680090B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/80—Compounds containing cobalt, with or without oxygen or hydrogen, and containing one or more other elements
    • C01G51/82—Compounds containing cobalt, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/854—Thermoelectric active materials comprising inorganic compositions comprising only metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/784—Electrically conducting, semi-conducting, or semi-insulating host material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2012532196A 2009-09-28 2010-09-23 Ｇａｓｂ充填スクッテルダイト複合材料、およびその製造方法 Expired - Fee Related JP5680090B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN200910196619A CN102031416B (zh) 2009-09-28 2009-09-28 一种填充方钴矿基复合材料及其制备方法
CN200910196619.3 2009-09-28
PCT/US2010/049906 WO2011038055A1 (en) 2009-09-28 2010-09-23 Gasb-filled skutterudite composite material and method of preparing the same

Publications (2)

Publication Number Publication Date
JP2013506312A JP2013506312A (ja) 2013-02-21
JP5680090B2 true JP5680090B2 (ja) 2015-03-04

Family

ID=43303718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012532196A Expired - Fee Related JP5680090B2 (ja) 2009-09-28 2010-09-23 Ｇａｓｂ充填スクッテルダイト複合材料、およびその製造方法

Country Status (7)

Country Link
US (1) US8968589B2 (enExample)
EP (1) EP2483205B1 (enExample)
JP (1) JP5680090B2 (enExample)
KR (1) KR20120106730A (enExample)
CN (1) CN102031416B (enExample)
IN (1) IN2012DN03396A (enExample)
WO (1) WO2011038055A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881814B (zh) * 2011-07-12 2015-11-25 中国科学院上海硅酸盐研究所 空穴补偿型方钴矿热电材料及其制备方法
CN104211024B (zh) * 2013-06-04 2016-02-10 中国科学院上海硅酸盐研究所 P型可逆相变高性能热电材料及其制备方法
KR101560455B1 (ko) * 2013-10-29 2015-10-14 희성금속 주식회사 방전 플라즈마 소결을 이용한 LCD Glass 제조용 산화물 분산 강화형 백금­로듐 합금의 제조 방법
CN104498751B (zh) * 2014-12-25 2017-01-18 中国科学院上海硅酸盐研究所 一种方钴矿热电材料的制备方法
JP6655918B2 (ja) * 2015-09-10 2020-03-04 学校法人中部大学 熱電材料
CN105936985A (zh) * 2016-06-30 2016-09-14 东华大学 一种高性能多尺寸纳米结构方钴矿材料的制备方法
JP6862937B2 (ja) * 2017-03-08 2021-04-21 株式会社豊田中央研究所 ｐ型熱電材料
KR102122573B1 (ko) 2017-03-09 2020-06-12 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
JP7283396B2 (ja) * 2018-01-15 2023-05-30 株式会社プロテリアル 熱電変換材料、熱電変換モジュールおよび熱電変換材料の製造方法
TWI683910B (zh) * 2018-10-18 2020-02-01 國立中山大學 熱電合金及其製作方法與熱電合金複合物
CN114497335B (zh) * 2022-01-20 2024-12-27 济南大学 一种方钴矿热电材料电极以及方钴矿热电材料与电极的连接方法
CN115528165A (zh) * 2022-10-27 2022-12-27 南京工业大学 一种n型GeTe基热电材料及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994639A (en) 1997-03-25 1999-11-30 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Thermodynamically metastable skutterudite crystalline-structured compounds
EP0874406A3 (en) 1997-04-23 2000-12-13 Matsushita Electric Industrial Co., Ltd. A co-sb based thermoelectric material and a method of producing the same
US6207888B1 (en) * 1997-10-10 2001-03-27 Marlow Industries, Inc. Semiconductor materials with skutterudite type crystal lattice structures optimized for selected thermoelectric properties and methods of preparation
CN1943052A (zh) * 2004-04-14 2007-04-04 纳幕尔杜邦公司 高性能热电材料和它们的制备方法
CN100500900C (zh) * 2006-08-29 2009-06-17 中国科学院上海硅酸盐研究所 一种碱金属原子填充锑化钴基方钴矿热电材料及其制备方法
GB0724752D0 (en) * 2007-12-19 2008-01-30 Bari Mazhar A Method for producing a thermoelectric material

Also Published As

Publication number Publication date
EP2483205B1 (en) 2016-03-30
KR20120106730A (ko) 2012-09-26
EP2483205A1 (en) 2012-08-08
US20130043439A1 (en) 2013-02-21
WO2011038055A1 (en) 2011-03-31
CN102031416A (zh) 2011-04-27
JP2013506312A (ja) 2013-02-21
US8968589B2 (en) 2015-03-03
IN2012DN03396A (enExample) 2015-10-23
CN102031416B (zh) 2012-08-29

Similar Documents

Publication Publication Date Title
JP2013506312A (ja) Ｇａｓｂ充填スクッテルダイト複合材料、およびその製造方法
CN102373348B (zh) p型方钴矿材料及其制备方法
JP6401436B2 (ja) 歪み電子状態密度を有する熱電素材及びその製造方法、並びにこれを含む熱電モジュール及び熱電装置
KR101902925B1 (ko) 열전재료, 열전소자 및 열전모듈
JP6608961B2 (ja) Ｐ型スクッテルダイト熱電材料、その製造方法およびこれを含む熱電素子
KR20130084120A (ko) 나노복합체형 열전재료, 이를 포함하는 열전모듈과 열전장치
CN105765748B (zh) 具有高热电优值的纳米结构的硒化铜及其制备方法
JP2016529699A (ja) 熱電素子のための四面銅鉱構造に基づく熱電材料
Su et al. The role of Ga in Ba0. 30Ga x Co4Sb12+ x filled skutterudites
CN102881814B (zh) 空穴补偿型方钴矿热电材料及其制备方法
Shaheen et al. Enhanced thermoelectric properties in Ge-doped and single-filled skutterudites prepared by unique melt-spinning method
US20160343930A1 (en) Thermoelectric composite material and method for producing same
US9419196B2 (en) Oxide nanoparticle-dispersed, chalcogenide-based, and phase-separated composite thermoelectric material
JP2012244001A (ja) ナノコンポジット熱電材料およびその製造方法
Truong Thermoelectric properties of higher manganese silicides
JP6727626B2 (ja) カルコゲン化合物、その製造方法及びこれを含む熱電素子
CN100549195C (zh) 一种填充方钴矿基热电复合材料及其制备方法
Liu et al. Effect of annealing on thermoelectric properties of eutectic PbTe–Sb2Te3 composite with self-assembled lamellar structure
KR102443775B1 (ko) 열전소재
KR102138937B1 (ko) 칼코겐 화합물, 이의 제조 방법, 및 이를 포함하는 열전소자
KR20170065308A (ko) 열안정성이 개선된 Bi-Te-Se계 열전 파우더, 열전 재료 및 그 제조 방법
CN1916211A (zh) 一种碱金属原子填充锑化钴基方钴矿热电材料及其制备方法
Zou et al. Thermoelectric Properties of Nanocrystalline Bi2 (Te1− x Se x) 3 Prepared by High-Pressure Sintering
CN110832650B (zh) 热电材料和包含其的热电装置
JP6821235B2 (ja) カルコゲン化合物、その製造方法、及びこれを含む熱電素子

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130815

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20140624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150106

R150 Certificate of patent or registration of utility model

Ref document number: 5680090

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees