KR20120106730A - Ｇａｓｂ-충진된 스크테루다이트 복합물 및 그 제조 방법 - Google Patents

Ｇａｓｂ-충진된 스크테루다이트 복합물 및 그 제조 방법 Download PDF

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KR20120106730A
KR20120106730A KR1020127011191A KR20127011191A KR20120106730A KR 20120106730 A KR20120106730 A KR 20120106730A KR 1020127011191 A KR1020127011191 A KR 1020127011191A KR 20127011191 A KR20127011191 A KR 20127011191A KR 20120106730 A KR20120106730 A KR 20120106730A
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South Korea
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gasb
matrix
particles
filled
composite
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Korean (ko)
Inventor
리동 첸
시홍 첸
린 헤
시앙양 후앙
첸 시옹
웬칭 장
Original Assignee
상하이 인스티튜트 오브 세라믹스 차이니즈 아카데미 오브 사이언시즈
코닝 인코포레이티드
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Publication of KR20120106730A publication Critical patent/KR20120106730A/ko
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/80—Compounds containing cobalt, with or without oxygen or hydrogen, and containing one or more other elements
    • C01G51/82—Compounds containing cobalt, with or without oxygen or hydrogen, and containing two or more other elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/854—Thermoelectric active materials comprising inorganic compositions comprising only metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/784—Electrically conducting, semi-conducting, or semi-insulating host material

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
KR1020127011191A 2009-09-28 2010-09-23 Ｇａｓｂ-충진된 스크테루다이트 복합물 및 그 제조 방법 Withdrawn KR20120106730A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910196619A CN102031416B (zh) 2009-09-28 2009-09-28 一种填充方钴矿基复合材料及其制备方法
CN200910196619.3 2009-09-28

Publications (1)

Publication Number Publication Date
KR20120106730A true KR20120106730A (ko) 2012-09-26

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KR1020127011191A Withdrawn KR20120106730A (ko) 2009-09-28 2010-09-23 Ｇａｓｂ-충진된 스크테루다이트 복합물 및 그 제조 방법

Country Status (7)

Country Link
US (1) US8968589B2 (enExample)
EP (1) EP2483205B1 (enExample)
JP (1) JP5680090B2 (enExample)
KR (1) KR20120106730A (enExample)
CN (1) CN102031416B (enExample)
IN (1) IN2012DN03396A (enExample)
WO (1) WO2011038055A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015064808A1 (ko) * 2013-10-29 2015-05-07 희성금속 주식회사 방전 플라즈마 소결을 이용한 lcd glass 제조용 산화물 분산 강화형 백금-로듐 합금의 제조 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881814B (zh) * 2011-07-12 2015-11-25 中国科学院上海硅酸盐研究所 空穴补偿型方钴矿热电材料及其制备方法
CN104211024B (zh) * 2013-06-04 2016-02-10 中国科学院上海硅酸盐研究所 P型可逆相变高性能热电材料及其制备方法
CN104498751B (zh) * 2014-12-25 2017-01-18 中国科学院上海硅酸盐研究所 一种方钴矿热电材料的制备方法
JP6655918B2 (ja) * 2015-09-10 2020-03-04 学校法人中部大学 熱電材料
CN105936985A (zh) * 2016-06-30 2016-09-14 东华大学 一种高性能多尺寸纳米结构方钴矿材料的制备方法
JP6862937B2 (ja) * 2017-03-08 2021-04-21 株式会社豊田中央研究所 ｐ型熱電材料
KR102122573B1 (ko) 2017-03-09 2020-06-12 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
WO2019139168A1 (ja) * 2018-01-15 2019-07-18 日立金属株式会社 熱電変換材料、熱電変換モジュールおよび熱電変換材料の製造方法
TWI683910B (zh) * 2018-10-18 2020-02-01 國立中山大學 熱電合金及其製作方法與熱電合金複合物
CN114497335B (zh) * 2022-01-20 2024-12-27 济南大学 一种方钴矿热电材料电极以及方钴矿热电材料与电极的连接方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994639A (en) 1997-03-25 1999-11-30 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Thermodynamically metastable skutterudite crystalline-structured compounds
EP0874406A3 (en) 1997-04-23 2000-12-13 Matsushita Electric Industrial Co., Ltd. A co-sb based thermoelectric material and a method of producing the same
US6207888B1 (en) * 1997-10-10 2001-03-27 Marlow Industries, Inc. Semiconductor materials with skutterudite type crystal lattice structures optimized for selected thermoelectric properties and methods of preparation
US7723607B2 (en) * 2004-04-14 2010-05-25 E.I. Du Pont De Nemours And Company High performance thermoelectric materials and their method of preparation
CN100500900C (zh) * 2006-08-29 2009-06-17 中国科学院上海硅酸盐研究所 一种碱金属原子填充锑化钴基方钴矿热电材料及其制备方法
GB0724752D0 (en) 2007-12-19 2008-01-30 Bari Mazhar A Method for producing a thermoelectric material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015064808A1 (ko) * 2013-10-29 2015-05-07 희성금속 주식회사 방전 플라즈마 소결을 이용한 lcd glass 제조용 산화물 분산 강화형 백금-로듐 합금의 제조 방법

Also Published As

Publication number Publication date
WO2011038055A1 (en) 2011-03-31
CN102031416A (zh) 2011-04-27
US8968589B2 (en) 2015-03-03
US20130043439A1 (en) 2013-02-21
EP2483205A1 (en) 2012-08-08
JP5680090B2 (ja) 2015-03-04
IN2012DN03396A (enExample) 2015-10-23
JP2013506312A (ja) 2013-02-21
EP2483205B1 (en) 2016-03-30
CN102031416B (zh) 2012-08-29

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