JP5672324B2 - 接合体の製造方法及びパワーモジュール用基板の製造方法 - Google Patents

接合体の製造方法及びパワーモジュール用基板の製造方法 Download PDF

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JP5672324B2
JP5672324B2 JP2013055517A JP2013055517A JP5672324B2 JP 5672324 B2 JP5672324 B2 JP 5672324B2 JP 2013055517 A JP2013055517 A JP 2013055517A JP 2013055517 A JP2013055517 A JP 2013055517A JP 5672324 B2 JP5672324 B2 JP 5672324B2
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copper
ceramic substrate
substrate
manufacturing
power module
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JP2014183118A5 (enExample
JP2014183118A (ja
Inventor
伸幸 寺▲崎▼
伸幸 寺▲崎▼
長友　義幸
義幸 長友
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2013055517A priority Critical patent/JP5672324B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to PCT/JP2014/057121 priority patent/WO2014148425A1/ja
Priority to US14/775,819 priority patent/US10199237B2/en
Priority to CN201480012947.2A priority patent/CN105190869B/zh
Priority to EP14769861.7A priority patent/EP2978019B1/en
Priority to KR1020157025321A priority patent/KR102220852B1/ko
Priority to TW103110092A priority patent/TWI609461B/zh
Publication of JP2014183118A publication Critical patent/JP2014183118A/ja
Publication of JP2014183118A5 publication Critical patent/JP2014183118A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/121—Metallic interlayers based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/122—Metallic interlayers based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127—The active component for bonding being a refractory metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Ceramic Products (AREA)
JP2013055517A 2013-03-18 2013-03-18 接合体の製造方法及びパワーモジュール用基板の製造方法 Active JP5672324B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2013055517A JP5672324B2 (ja) 2013-03-18 2013-03-18 接合体の製造方法及びパワーモジュール用基板の製造方法
US14/775,819 US10199237B2 (en) 2013-03-18 2014-03-17 Method for manufacturing bonded body and method for manufacturing power-module substrate
CN201480012947.2A CN105190869B (zh) 2013-03-18 2014-03-17 接合体的制造方法、及功率模块用基板的制造方法
EP14769861.7A EP2978019B1 (en) 2013-03-18 2014-03-17 Method for manufacturing bonded body and method for manufacturing power-module substrate
PCT/JP2014/057121 WO2014148425A1 (ja) 2013-03-18 2014-03-17 接合体の製造方法及びパワーモジュール用基板の製造方法
KR1020157025321A KR102220852B1 (ko) 2013-03-18 2014-03-17 접합체의 제조 방법 및 파워 모듈용 기판의 제조 방법
TW103110092A TWI609461B (zh) 2013-03-18 2014-03-18 接合體之製造方法及功率模組用基板之製造方法

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JP2013055517A JP5672324B2 (ja) 2013-03-18 2013-03-18 接合体の製造方法及びパワーモジュール用基板の製造方法

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JP2014227284A Division JP5904257B2 (ja) 2014-11-07 2014-11-07 パワーモジュール用基板の製造方法

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JP2014183118A JP2014183118A (ja) 2014-09-29
JP2014183118A5 JP2014183118A5 (enExample) 2014-11-06
JP5672324B2 true JP5672324B2 (ja) 2015-02-18

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US (1) US10199237B2 (enExample)
EP (1) EP2978019B1 (enExample)
JP (1) JP5672324B2 (enExample)
KR (1) KR102220852B1 (enExample)
CN (1) CN105190869B (enExample)
TW (1) TWI609461B (enExample)
WO (1) WO2014148425A1 (enExample)

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JP6111764B2 (ja) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP5672324B2 (ja) 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
KR102131484B1 (ko) * 2013-08-26 2020-07-07 미쓰비시 마테리알 가부시키가이샤 접합체 및 파워 모듈용 기판
JP6127833B2 (ja) 2013-08-26 2017-05-17 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
JP5720839B2 (ja) * 2013-08-26 2015-05-20 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
JP6079505B2 (ja) 2013-08-26 2017-02-15 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
JP6256176B2 (ja) * 2014-04-25 2018-01-10 三菱マテリアル株式会社 接合体の製造方法、パワーモジュール用基板の製造方法
CN109075135B (zh) * 2016-01-22 2022-04-05 三菱综合材料株式会社 接合体、功率模块用基板、接合体的制造方法及功率模块用基板的制造方法
JP6819299B2 (ja) * 2016-01-22 2021-01-27 三菱マテリアル株式会社 接合体、パワーモジュール用基板、接合体の製造方法及びパワーモジュール用基板の製造方法
JP6652856B2 (ja) * 2016-02-25 2020-02-26 株式会社フジクラ 半導体レーザモジュール及びその製造方法
JP7124633B2 (ja) 2017-10-27 2022-08-24 三菱マテリアル株式会社 接合体、及び、絶縁回路基板
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WO2020044594A1 (ja) 2018-08-28 2020-03-05 三菱マテリアル株式会社 銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法
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CN112289763A (zh) * 2020-06-12 2021-01-29 无锡利普思半导体有限公司 一种功率半导体模块
CN115989579B (zh) * 2020-10-07 2025-03-14 株式会社东芝 接合体、陶瓷电路基板及半导体装置
CN112811922B (zh) * 2021-01-20 2021-11-02 中国科学院上海硅酸盐研究所 一种覆铜板的氮化硅陶瓷基片及其制备方法
TWI851321B (zh) * 2023-07-06 2024-08-01 同欣電子工業股份有限公司 活性金屬硬焊基板材料及其製造方法
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